晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 475/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET P-CH TO263-3 |
2,484 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 6.4mOhm @ 80A, 10V | 2.2V @ 150µA | 104nC @ 10V | ±16V | 6580pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 70A TO220-3 |
2,592 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Tc) | 10V | 4.8mOhm @ 70A, 10V | 4V @ 200µA | 41nC @ 10V | ±20V | 3300pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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|
Nexperia |
MOSFET N-CH 200V 39A TO220AB |
8,964 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 39A (Tc) | 10V | 57mOhm @ 17A, 10V | 4V @ 1mA | 96nC @ 10V | ±20V | 3750pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 120A TO-220 |
2,862 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 6.4mOhm @ 75A, 10V | 4V @ 150µA | 110nC @ 10V | ±20V | 4750pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 700V 11A TO262F |
8,280 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 11A (Tc) | 10V | 870mOhm @ 5.5A, 10V | 4.5V @ 250µA | 45nC @ 10V | ±30V | 2150pF @ 25V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 100A DPAK |
9,253 |
|
Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4.25mOhm @ 60A, 10V | 3.9V @ 50µA | 63nC @ 10V | ±20V | 2200pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 45A TO262-3 |
3,312 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 10V | 9.4mOhm @ 45A, 10V | 4V @ 34µA | 47nC @ 10V | ±20V | 3785pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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|
Infineon Technologies |
TRANSISTOR N-CH |
4,086 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET N-CH 40V 200A SO8FL |
7,254 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 1.5mOhm @ 50A, 10V | 2V @ 250µA | 70nC @ 10V | ±20V | 4300pF @ 20V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
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Renesas Electronics America |
MOSFET N-CH 500V 5A TO220 |
2,304 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 1.6Ohm @ 2A, 10V | - | 13nC @ 10V | ±30V | 550pF @ 25V | - | 28.5W (Tc) | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 18A D2PAK |
5,508 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1160pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Central Semiconductor Corp |
MOSFET N-CH 30V 3.6A SOT-23F |
3,924 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 2.5V, 4.5V | 40mOhm @ 1.8A, 4.5V | 1.2V @ 250µA | 13nC @ 4.5V | 12V | 590pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
|
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ON Semiconductor |
MOSFET N-CH 40V 41A 235A 5DFN |
6,012 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 41A (Ta), 235A (Tc) | 10V | 1.3mOhm @ 50A, 10V | 3.5V @ 250µA | 65nC @ 10V | ±20V | 4300pF @ 25V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
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Vishay Siliconix |
MOSFET N-CH 100V 60A POWERPAKSO |
6,642 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 6V, 10V | 7.8mOhm @ 20A, 10V | 3V @ 250µA | 66nC @ 10V | ±20V | 2350pF @ 50V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Diodes Incorporated |
MOSFET BVDSS: 501V 650V TO251 |
6,210 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 650V | 5.5A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 886pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3, IPak, Short Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 1000V 2.8A TO220 |
3,906 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 2.8A (Tc) | 10V | 6Ohm @ 1.5A, 10V | 4.5V @ 250µA | 20nC @ 10V | ±30V | 830pF @ 25V | - | 132W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V TO251 |
7,038 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 600V 6.2A TO-252 |
7,146 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 750mOhm @ 3.9A, 10V | 3.9V @ 260µA | 31nC @ 10V | ±20V | 620pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-1 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Microchip Technology |
MOSFET N-CH 40V 700MA TO92-3 |
7,362 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 700mA (Tj) | 5V, 10V | 750mOhm @ 1.5A, 10V | 1.6V @ 1mA | - | ±20V | 190pF @ 20V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
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Microchip Technology |
MOSFET N-CH 40V 700MA TO92-3 |
4,284 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 700mA (Tj) | 5V, 10V | 750mOhm @ 1.5A, 10V | 1.6V @ 1mA | - | ±20V | 190pF @ 20V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A TO-262 |
2,358 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 40V 84A 8PQFN |
8,316 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 84A (Tc) | 10V | 4.6mOhm @ 50A, 10V | 3.9V @ 50µA | 66nC @ 10V | ±20V | 2170pF @ 25V | - | 4.2W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-262 |
6,498 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250µA | 23nC @ 10V | ±30V | 510pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
ON Semiconductor |
MOSFET P-CHANNEL 30V 82A ATPAK |
4,446 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 82A (Ta) | 4.5V, 10V | 8.4mOhm @ 38A, 10V | 2.6V @ 1mA | 76nC @ 10V | ±20V | 3950pF @ 10V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET P-CHANNEL 40V 77A ATPAK |
2,682 |
|
- | P-Channel | MOSFET (Metal Oxide) | 40V | 77A (Ta) | 4.5V, 10V | 10.4mOhm @ 35A, 10V | 2.6V @ 1mA | 79.5nC @ 10V | ±20V | 3850pF @ 20V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET P-CHANNEL 60V 60A ATPAK |
3,384 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 60A (Ta) | 4V, 10V | 16mOhm @ 28A, 10V | 2.6V @ 1mA | 92nC @ 10V | ±20V | 4000pF @ 20V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Nexperia |
MOSFET N-CH 55V 75A D2PAK |
5,238 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.3mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 6000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Nexperia |
MOSFET N-CH 40V 75A D2PAK |
6,534 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.3V, 10V | 4mOhm @ 25A, 10V | 2V @ 1mA | 128nC @ 5V | ±15V | 8260pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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Texas Instruments |
MOSFET N-CH 30V 100A 8VSON |
8,172 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | 2mOhm @ 25A, 10V | 1.8V @ 250µA | 32nC @ 4.5V | ±20V | 4430pF @ 15V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
|
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Vishay Siliconix |
MOSFET N-CH 500V 5A DPAK |
3,492 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.7Ohm @ 3A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 490pF @ 25V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |