晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 548/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
TRANSISTOR N-CH |
6,714 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 1200V 6A TO-247 |
2,718 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 6A (Tc) | 10V | 2.4Ohm @ 500mA, 10V | 5V @ 1mA | 92nC @ 10V | ±30V | 2830pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 86A TO-247 |
7,848 |
|
HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 300V | 86A (Tc) | 10V | 43mOhm @ 43A, 10V | 5V @ 4mA | 180nC @ 10V | ±20V | 11300pF @ 25V | - | 860W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Microsemi |
MOSFET N-CH 1200V 8A D3PAK |
6,336 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 8A (Tc) | 10V | 2.1Ohm @ 3A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 2565pF @ 25V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 55V 360A TO-247 |
3,942 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 55V | 360A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 250µA | 330nC @ 10V | ±20V | 20000pF @ 25V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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|
IXYS |
MOSFET N-CH 600V 50A TO268 |
7,038 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 145mOhm @ 500mA, 10V | 5V @ 4mA | 94nC @ 10V | ±30V | 6300pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO-247 |
5,634 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115nC @ 10V | ±30V | 4100pF @ 300V | - | 270W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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|
ON Semiconductor |
MOSFET N-CH 500V 40A TO-264 |
5,670 |
|
FRFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 110mOhm @ 20A, 10V | 5V @ 250µA | 200nC @ 10V | ±30V | 7500pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3 | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 1000V 15A TO-247 |
6,966 |
|
HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 15A (Tc) | 10V | 760mOhm @ 500mA, 10V | 6.5V @ 1mA | 97nC @ 10V | ±30V | 5140pF @ 25V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 20A TO-268 |
3,654 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 20A (Tc) | 10V | 520mOhm @ 10A, 10V | 5V @ 4mA | 86nC @ 10V | ±30V | 4685pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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ON Semiconductor |
MOSFET N-CH 75V 80A TO-247 |
7,164 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 75V | 22A (Ta), 80A (Tc) | 6V, 10V | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 8665pF @ 25V | - | 450W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 170A TO-3P |
5,166 |
|
Polar™ | N-Channel | MOSFET (Metal Oxide) | 100V | 170A (Tc) | 10V | 9mOhm @ 500mA, 10V | 5V @ 250µA | 198nC @ 10V | ±20V | 6000pF @ 25V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 60V 200A TO-3P |
4,662 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Tc) | 10V | 5mOhm @ 400A, 15V | 5V @ 250µA | 200nC @ 10V | ±20V | 5400pF @ 25V | - | 714W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 500V 21A TO-3P |
7,542 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 600V 50A TO3P |
7,920 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 73mOhm @ 25A, 10V | 4.5V @ 4mA | 116nC @ 10V | ±30V | 4660pF @ 25V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 100V 90A I4-PAC-5 |
2,520 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 10V | 7mOhm @ 50A, 10V | 4.5V @ 250µA | 152nC @ 10V | ±30V | 9400pF @ 25V | - | 156W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS i4-PAC™ | i4-Pac™-5 |
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Infineon Technologies |
MOSFET N-CH 650V 46A TO-263-3 |
8,982 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1500V 3A TO-263 |
7,074 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1500V | 3A (Tc) | 10V | 7.3Ohm @ 1.5A, 10V | 5V @ 250µA | 38.6nC @ 10V | ±30V | 1375pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 600V 15A I4-PAC-5 |
5,184 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | ±20V | 2000pF @ 100V | - | - | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC™ | ISOPLUSi5-Pak™ |
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IXYS |
MOSFET P-CH 500V 11A TO-247AD |
5,886 |
|
- | P-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 5V @ 250µA | 130nC @ 10V | ±20V | 4700pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
8,100 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET P-CH 100V 50A TO-268 |
8,982 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 10V | 55mOhm @ 25A, 10V | 5V @ 250µA | 140nC @ 10V | ±20V | 4350pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 650V 52A TO-247 |
7,146 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 52A (Tc) | 10V | 68mOhm @ 26A, 10V | 5V @ 250µA | 113nC @ 10V | ±30V | 4350pF @ 25V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 11A ISOPLUS247 |
6,246 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 500mOhm @ 10A, 10V | 5V @ 4mA | 85nC @ 10V | ±30V | 4680pF @ 25V | - | 166W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 300V 69A TO-247 |
8,766 |
|
PolarHT™ HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 69A (Tc) | 10V | 49mOhm @ 500mA, 10V | 5V @ 4mA | 180nC @ 10V | ±20V | 4960pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 44A TO-3P |
3,744 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 5440pF @ 25V | - | 658W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 1000V 1.5A 8-SOIC |
6,642 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.5A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 300V 80A TO-268 |
2,844 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
FET 650V 65A TO247AD |
3,508 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-3P(N) |
2,088 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 105nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |