晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 671/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 55V 51A TO-262 |
2,556 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36nC @ 5V | ±16V | 1620pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 17A D2PAK |
8,496 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK |
7,614 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 250µA | 37nC @ 10V | ±20V | 920pF @ 25V | - | 3.8W (Ta), 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 20V 110A TO-220AB |
7,848 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | ±20V | 2980pF @ 10V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK |
3,580 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36nC @ 5V | ±16V | 1620pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 48A TO-220AB |
6,534 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 48A (Tc) | 4.5V, 7V | 16mOhm @ 29A, 7V | 700mV @ 250µA | 43nC @ 4.5V | ±10V | 2000pF @ 15V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 20V 110A D2PAK |
7,038 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | ±20V | 2980pF @ 10V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 110A TO-262 |
8,226 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | ±20V | 2980pF @ 10V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 55V 61A TO-220AB |
4,392 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 250µA | 64nC @ 10V | ±20V | 1720pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 30V 87A TO-262 |
7,668 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 87A (Tc) | 4.5V, 10V | 6.3mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | ±20V | 2130pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 20V 39A TO-220AB |
3,492 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 39A (Tc) | 4.5V, 7V | 20mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | ±10V | 1300pF @ 15V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 29A TO-262 |
5,436 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK |
3,490 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 1420pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK |
5,634 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 13.6mOhm @ 31A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1460pF @ 25V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 14A TO220FP |
5,994 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 14A (Tc) | 4V, 10V | 60mOhm @ 8.4A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 26W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 55V 12A TO-262 |
8,406 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 12A (Tc) | 10V | 175mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 30V 105A D2PAK |
5,994 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 105A (Tc) | 4.5V, 10V | 6mOhm @ 21A, 10V | 2.25V @ 250µA | 35nC @ 4.5V | ±20V | 2840pF @ 15V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO-262 |
2,124 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | ±20V | 2672pF @ 16V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 87A TO-262 |
5,634 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 87A (Tc) | 4.5V, 10V | 6.3mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | ±20V | 2130pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 20V 77A TO-220AB |
8,496 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 2.8V, 10V | 8.5mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2410pF @ 10V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 87A D2PAK |
7,884 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 87A (Tc) | 4.5V, 10V | 6.3mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | ±20V | 2130pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 30V 62A TO-220AB |
6,642 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 62A (Tc) | 4.5V, 10V | 12.5mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1990pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
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Infineon Technologies |
MOSFET N-CH 55V 29A D2PAK |
6,426 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET N-CH 250V 3.4A TO220FP |
3,294 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 3.4A (Tc) | 10V | 1.1Ohm @ 2A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 61A D2PAK |
4,590 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 250µA | 64nC @ 10V | ±20V | 1720pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 4A TO220FP |
2,466 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 4A (Tc) | 4V, 5V | 800mOhm @ 2.4A, 5V | 2V @ 250µA | 16nC @ 10V | ±10V | 360pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 62A TO-262 |
5,688 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 62A (Tc) | 4.5V, 10V | 12.5mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1990pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 77A TO-262 |
6,462 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 2.8V, 10V | 8.5mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2410pF @ 10V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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|
Infineon Technologies |
MOSFET N-CH 20V 77A D2PAK |
7,632 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 2.8V, 10V | 8.5mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2410pF @ 10V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 77A D2PAK |
3,024 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1996pF @ 10V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |