晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 91/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 55V 14A TO220FP |
16,632 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 14A (Tc) | 10V | 70mOhm @ 7.8A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 29W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 100V 12A TO-220AB |
265,734 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 5V | 200mOhm @ 12A, 5V | 2V @ 250µA | - | ±10V | 900pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 500V 9.9A PGTO220 |
22,218 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 9.9A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8nC @ 10V | ±20V | 584pF @ 100V | Super Junction | 73W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 55V 53A TO-220AB |
12,978 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 53A (Tc) | 10V | 16.5mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1696pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Texas Instruments |
MOSFET N-CH 40V 100A 8VSON |
17,112 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 4.3mOhm @ 22A, 10V | 2.3V @ 250µA | 16nC @ 4.5V | ±20V | 2640pF @ 20V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 500V 2.4A I-PAK |
25,602 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 360pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 100V 9A POWER33 |
26,712 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 9A (Ta), 43A (Tc) | 6V, 10V | 14mOhm @ 9A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 1290pF @ 50V | - | 2.8W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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Microchip Technology |
MOSFET N-CH 50V 1.5A SOT89-3 |
18,294 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 1.5A (Tj) | 4.5V, 10V | 300mOhm @ 1.5A, 10V | 2.4V @ 10mA | - | ±20V | 300pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
23,640 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | ±16V | 2880pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 12.5A DPAK-3 |
52,332 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 12.5A (Ta), 50A (Tc) | 6V, 10V | 10.2mOhm @ 12.5A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 2265pF @ 50V | - | 3.1W (Ta), 127W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 26A TO252-3 |
24,984 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 6V, 10V | 2.5mOhm @ 90A, 10V | 2.8V @ 95µA | 71nC @ 10V | ±20V | 5200pF @ 30V | - | 3W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
T6 40V MOSFET |
15,108 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta), 185A (Tc) | 10V | 1.7mOhm @ 50A, 10V | 3.5V @ 250µA | 47nC @ 10V | ±20V | 3300pF @ 25V | - | 3.8W (Ta), 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
139,440 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 14mOhm @ 10A, 10V | 4.5V @ 250µA | 72nC @ 10V | ±20V | 2870pF @ 50V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 250V 2.1A 8-SOIC |
152,628 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 2.1A (Ta) | 6V, 10V | 155mOhm @ 3A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 600V 11A DPAK |
65,238 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 580pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 43A TO220-3 |
16,140 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 43A (Tc) | 6V, 10V | 18mOhm @ 33A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1800pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 64A TO-220AB |
28,788 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 1970pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Microchip Technology |
MOSFET N-CH 30V 640MA TO92-3 |
23,400 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 640mA (Tj) | 5V, 10V | 1.2Ohm @ 1A, 10V | 2.5V @ 1mA | - | ±30V | 190pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Vishay Siliconix |
MOSFET P-CHAN 80V TO252 |
105,042 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 4.5V, 10V | 25mOhm @ 10.5A, 10V | 2.5V @ 250µA | 137nC @ 10V | ±20V | 5350pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 28A D2PAK |
36,276 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1700pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 80V 8.8A POWER56 |
271,380 |
|
UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 8.8A (Ta), 22A (Tc) | 6V, 10V | 16.5mOhm @ 8.8A, 10V | 4V @ 250µA | 40nC @ 10V | ±20V | 2490pF @ 40V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (5x6), Power56 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET P-CH 240V 0.2A TO92-3 |
28,860 |
|
- | P-Channel | MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 3.5V, 10V | 9Ohm @ 200mA, 10V | 2V @ 1mA | - | ±40V | 200pF @ 25V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 60V 79A TO-220AB |
28,734 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 79A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-220AB |
21,528 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 4V, 5V | 270mOhm @ 5.5A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 11A D2PAK |
89,520 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CHANNEL 800V 2A TO220 |
17,832 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 3.25Ohm @ 1A, 10V | 5V @ 100µA | 2.63nC @ 10V | ±30V | 102pF @ 100V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 200A POWERPAK8 |
16,812 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Tc) | 10V | 1.9mOhm @ 10A, 10V | 3.5V @ 250µA | 180nC @ 10V | ±20V | 10210pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 650V 11A DPAK |
21,168 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 19.5nC @ 10V | ±25V | 718pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 9A TO-220AB |
54,798 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 800pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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ON Semiconductor |
MOSFET N-CH 100V 20A TO-220F |
14,418 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Tc) | 10V | 38.2mOhm @ 5.9A, 10V | 4.5V @ 250µA | 35nC @ 10V | ±20V | 1800pF @ 25V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |