晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 94/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 40V 58A PPAK SO-8 |
48,330 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 58A (Tc) | 4.5V, 10V | 7.5mOhm @ 16A, 10V | 3V @ 250µA | 77nC @ 10V | ±20V | 3540pF @ 20V | - | 4.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 55V 135A D2PAK |
28,416 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 135A (Tc) | 10V | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 5110pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 17A TO-220AB |
12,750 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 17A (Tc) | 10V | 95mOhm @ 10A, 10V | 4.9V @ 50µA | 20nC @ 10V | ±20V | 800pF @ 50V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
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Vishay Siliconix |
MOSFET N-CH 80V 7.6A PPAK SO-8 |
22,086 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 7.6A (Ta) | 6V, 10V | 16.5mOhm @ 10A, 10V | 2V @ 250µA (Min) | 41nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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Microchip Technology |
MOSFET P-CH 16.5V 0.5A TO92-3 |
12,798 |
|
- | P-Channel | MOSFET (Metal Oxide) | 16.5V | 500mA (Tj) | 2V, 5V | 1.5Ohm @ 300mA, 5V | 1V @ 1mA | - | ±10V | 250pF @ 15V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
23,118 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3450pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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STMicroelectronics |
MOSFET N-CH 600V TO-220 |
21,288 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 950mOhm @ 2.5A, 10V | 4V @ 250µA | 8.8nC @ 10V | ±25V | 271pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 20A TO220FP |
25,944 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Tc) | 10V | 52mOhm @ 11A, 10V | 4V @ 250µA | 94nC @ 10V | ±20V | 1400pF @ 25V | - | 54W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 116A TO-220AB |
13,908 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 1V @ 250µA | 60nC @ 4.5V | ±16V | 3290pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 900V 5.8A D2PAK |
21,870 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.8A (Tc) | 10V | 2Ohm @ 2.9A, 10V | 4.5V @ 100µA | 60.5nC @ 10V | ±30V | 1350pF @ 25V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET N-CH 250V 14A TO-220AB |
19,014 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 60V 100A TO220-3 |
29,352 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Ta), 100A (Tc) | 4.5V, 10V | 9.5mOhm @ 40A, 10V | 2.3V @ 250µA | 24nC @ 10V | ±20V | 1880pF @ 30V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 2A TO-220FP |
18,606 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.8Ohm @ 1A, 10V | 4.5V @ 50µA | 15nC @ 10V | ±30V | 280pF @ 25V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Microchip Technology |
MOSFET P-CH 80V 0.28A TO92-3 |
23,604 |
|
- | P-Channel | MOSFET (Metal Oxide) | 80V | 280mA (Tj) | 10V | 5Ohm @ 1A, 10V | 4.5V @ 1mA | - | ±30V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET P-CH 120V 15A TO-220F |
22,872 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 120V | 15A (Tc) | 10V | 200mOhm @ 7.5A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1100pF @ 25V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 9A WDSON-2 |
101,856 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 9A (Ta), 83A (Tc) | 6V, 10V | 5.6mOhm @ 30A, 10V | 3.5V @ 100µA | 74nC @ 10V | ±20V | 5500pF @ 50V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO263 |
12,702 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | ±20V | 1400pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 140A TO-220AB |
14,190 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 5.5mOhm @ 71A, 10V | 1V @ 250µA | 76nC @ 4.5V | ±16V | 3720pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 82A TO-220AB |
13,146 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 82A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 3820pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 60V 47A D2PAK |
52,182 |
|
QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 47A (Tc) | 10V | 26mOhm @ 23.5A, 10V | 4V @ 250µA | 110nC @ 10V | ±25V | 3600pF @ 25V | - | 3.75W (Ta), 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 100V 33.5A D2PAK |
13,518 |
|
QFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 33.5A (Tc) | 10V | 60mOhm @ 16.75A, 10V | 4V @ 250µA | 110nC @ 10V | ±25V | 2910pF @ 25V | - | 3.75W (Ta), 155W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 40A TO252 |
43,050 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 25mOhm @ 40A, 10V | 3V @ 250µA | 60nC @ 10V | ±20V | 2400pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 160A I-PAK |
29,388 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | ±20V | 4880pF @ 15V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 900V 2.1A TO-220 |
26,568 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 2.1A (Tc) | 10V | 6.5Ohm @ 1.05A, 10V | 4.5V @ 50µA | 27nC @ 10V | ±30V | 485pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 18A TO-220AB |
25,428 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 100V 100A TO220 |
18,840 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 16.5mOhm @ 30A, 10V | 3.4V @ 250µA | 22.2nC @ 10V | ±20V | 1670pF @ 50V | - | 118W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 75V 100A TDSON-8 |
76,056 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 3.6mOhm @ 50A, 10V | 3.8V @ 110µA | 63.4nC @ 10V | ±20V | 4400pF @ 37.5V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 100V 0.9A TO92-3 |
48,528 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 900mA (Ta) | 5V, 10V | 500mOhm @ 3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 850mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 1.1A TO92-3 |
30,792 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 1.1A (Ta) | 5V, 10V | 330mOhm @ 3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 850mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 75V 120A D2PAK |
61,458 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 5.8mOhm @ 75A, 10V | 4V @ 150µA | 110nC @ 10V | ±20V | 4750pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |