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Cree/Wolfspeed 晶體管-FET,MOSFET-單

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類別半導體 / 晶體管 / 晶體管-FET,MOSFET-單
制造商Cree/Wolfspeed
記錄 39
頁面 1/2
圖片
型號
制造商
描述
庫存
數量
系列
FET類型
技術
漏極至源極電壓(Vdss)
電流-25°C時的連續漏極(Id)
驅動電壓(Max Rds On,Min Rds On)
Rds On(Max)@ Id,Vgs
Vgs(th)(最大)@ ID
門電荷(Qg)(最大值)@ Vgs
Vgs(最大)
輸入電容(Ciss)(最大值)@ Vds
FET功能
功耗(最大值)
工作溫度
安裝類型
供應商設備包裝
包裝/箱
C3M0280090D
Cree/Wolfspeed
MOSFET N-CH 900V 11.5A
22,812
C3M™
N-Channel
SiCFET (Silicon Carbide)
900V
11.5A (Tc)
15V
360mOhm @ 7.5A, 15V
3.5V @ 1.2mA
9.5nC @ 15V
+18V, -8V
150pF @ 600V
-
54W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
C2M1000170D
Cree/Wolfspeed
MOSFET N-CH 1700V 4.9A TO247
135,762
Z-FET™
N-Channel
SiCFET (Silicon Carbide)
1700V
4.9A (Tc)
20V
1.1Ohm @ 2A, 20V
2.4V @ 100µA
13nC @ 20V
+25V, -10V
191pF @ 1000V
-
69W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
C2M0280120D
Cree/Wolfspeed
MOSFET N-CH 1200V 10A TO-247-3
157,680
Z-FET™
N-Channel
SiCFET (Silicon Carbide)
1200V
10A (Tc)
20V
370mOhm @ 6A, 20V
2.8V @ 1.25mA (Typ)
20.4nC @ 20V
+25V, -10V
259pF @ 1000V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
C2M1000170J
Cree/Wolfspeed
MOSFET N-CH 1700V 5.3A TO247
35,286
C2M™
N-Channel
SiCFET (Silicon Carbide)
1700V
5.3A (Tc)
20V
1.4Ohm @ 2A, 20V
3.1V @ 500µA (Typ)
13nC @ 20V
+25V, -10V
200pF @ 1000V
-
78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7 (Straight Leads)
C3M0120090D
Cree/Wolfspeed
900V, 120 MOHM, G3 SIC MOSFET
23,154
C3M™
N-Channel
SiCFET (Silicon Carbide)
900V
23A (Tc)
15V
155mOhm @ 15A, 15V
3.5V @ 3mA
17.3nC @ 15V
+18V, -8V
350pF @ 600V
-
97W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
C3M0120090J
Cree/Wolfspeed
MOSFET N-CH 900V 22A
25,476
C3M™
N-Channel
SiCFET (Silicon Carbide)
900V
22A (Tc)
15V
155mOhm @ 15A, 15V
3.5V @ 3mA
17.3nC @ 15V
+18V, -8V
350pF @ 600V
-
83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
C2M0160120D
Cree/Wolfspeed
MOSFET N-CH 1200V 19A TO-247
39,336
Z-FET™
N-Channel
SiCFET (Silicon Carbide)
1200V
19A (Tc)
20V
196mOhm @ 10A, 20V
2.5V @ 500µA
32.6nC @ 20V
+25V, -10V
527pF @ 800V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
C3M0120100J
Cree/Wolfspeed
MOSFET N-CH 1000V 22A D2PAK-7
18,252
C3M™
N-Channel
SiCFET (Silicon Carbide)
1000V
22A (Tc)
15V
155mOhm @ 15A, 15V
3.5V @ 3mA
21.5nC @ 15V
+15V, -4V
350pF @ 600V
-
83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
C3M0065090D
Cree/Wolfspeed
MOSFET N-CH 900V 36A TO247-3
75,426
C3M™
N-Channel
SiCFET (Silicon Carbide)
900V
36A (Tc)
15V
78mOhm @ 20A, 15V
2.1V @ 5mA
30.4nC @ 15V
+18V, -8V
660pF @ 600V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
C3M0065090J
Cree/Wolfspeed
MOSFET N-CH 900V 35A D2PAK-7
141,516
C3M™
N-Channel
SiCFET (Silicon Carbide)
900V
35A (Tc)
15V
78mOhm @ 20A, 15V
2.1V @ 5mA
30nC @ 15V
+19V, -8V
660pF @ 600V
-
113W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
C3M0065100K
Cree/Wolfspeed
1000V, 65 MOHM, G3 SIC MOSFET
27,096
C3M™
N-Channel
SiCFET (Silicon Carbide)
1000V
35A (Tc)
15V
78mOhm @ 20A, 15V
3.5V @ 5mA
35nC @ 15V
+19V, -8V
660pF @ 600V
-
113.5W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4L
TO-247-4
C3M0065100J
Cree/Wolfspeed
MOSFET N-CH 1000V 35A D2PAK-7
13,236
C3M™
N-Channel
SiCFET (Silicon Carbide)
1000V
35A (Tc)
15V
78mOhm @ 20A, 15V
3.5V @ 5mA
35nC @ 15V
+15V, -4V
660pF @ 600V
-
113.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
C3M0075120J
Cree/Wolfspeed
MOSFET N-CH 1200V 30A D2PAK-7
20,364
C3M™
N-Channel
SiCFET (Silicon Carbide)
1200V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
51nC @ 15V
+19V, -8V
1350pF @ 1000V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
C3M0075120K
Cree/Wolfspeed
MOSFET N-CH 1200V 30A TO247-4
19,980
C3M™
N-Channel
SiCFET (Silicon Carbide)
1200V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
51nC @ 15V
+19V, -8V
1350pF @ 1000V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4L
TO-247-4
C2M0080120D
Cree/Wolfspeed
MOSFET N-CH 1200V 31.6A TO247
879
C2M™
N-Channel
SiCFET (Silicon Carbide)
1200V
36A (Tc)
20V
98mOhm @ 20A, 20V
4V @ 5mA
62nC @ 5V
+25V, -10V
950pF @ 1000V
-
192W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
C3M0075120D
Cree/Wolfspeed
MOSFET 1200V, 75 MOHM, G3 SIC
8,484
C3M™
N-Channel
SiCFET (Silicon Carbide)
1200V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
54nC @ 15V
+19V, -8V
1350pF @ 1000V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
C3M0030090K
Cree/Wolfspeed
ZFET 900V, 30 MOHM, G3 SIC MOSFE
7,584
C3M™
N-Channel
SiCFET (Silicon Carbide)
900V
63A (Tc)
15V
39mOhm @ 35A, 15V
3.5V @ 11mA
87nC @ 15V
+15V, -4V
1864pF @ 600V
-
149W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4
TO-247-4
C2M0040120D
Cree/Wolfspeed
MOSFET N-CH 1200V 60A TO-247
37,512
Z-FET™
N-Channel
SiCFET (Silicon Carbide)
1200V
60A (Tc)
20V
52mOhm @ 40A, 20V
2.8V @ 10mA
115nC @ 20V
+25V, -10V
1893pF @ 1000V
-
330W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
C2M0080170P
Cree/Wolfspeed
ZFET SIC DMOSFET, 1700V VDS, RDS
8,052
C2M™
N-Channel
SiCFET (Silicon Carbide)
1700V
40A (Tc)
20V
125mOhm @ 28A, 20V
4V @ 10mA
120nC @ 20V
+25V, -10V
2250pF @ 1000V
-
277W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4
TO-247-4
C2M0025120D
Cree/Wolfspeed
MOSFET N-CH 1200V 90A TO-247
14,382
Z-FET™
N-Channel
SiCFET (Silicon Carbide)
1200V
90A (Tc)
20V
34mOhm @ 50A, 20V
2.4V @ 10mA
161nC @ 20V
+25V, -10V
2788pF @ 1000V
-
463W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
C2M0045170P
Cree/Wolfspeed
ZFET SIC DMOSFET, 1700V VDS, RDS
11,112
C2M™
N-Channel
SiCFET (Silicon Carbide)
1700V
72A (Tc)
20V
59mOhm @ 50A, 20V
4V @ 18mA
188nC @ 20V
+25V, -10V
3672pF @ 1000V
-
520W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
TO-247-4
TO-247-4
C2M0045170D
Cree/Wolfspeed
MOSFET NCH 1.7KV 72A TO247
19,008
C2M™
N-Channel
SiCFET (Silicon Carbide)
1700V
72A (Tc)
20V
70mOhm @ 50A, 20V
4V @ 18mA
188nC @ 20V
+25V, -10V
3672pF @ 1kV
-
520W (Tc)
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
C3M0016120K
Cree/Wolfspeed
SIC MOSFET G3 1200V 16 MOHM
10,008
C3M™
N-Channel
SiCFET (Silicon Carbide)
1.2kV
115A (Tc)
15V
22.3mOhm @ 75A, 15V
3.6V @ 23mA
211nC @ 15V
+15V, -4V
6085pF @ 1000V
-
556W (Tc)
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
C3M0280090J
Cree/Wolfspeed
MOSFET N-CH 900V 11A
16,776
C3M™
N-Channel
SiCFET (Silicon Carbide)
900V
11A (Tc)
15V
360mOhm @ 7.5A, 15V
3.5V @ 1.2mA
9.5nC @ 15V
+18V, -8V
150pF @ 600V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
C3M0120090J-TR
Cree/Wolfspeed
MOSFET N-CH 900V 22A
17,316
C3M™
N-Channel
SiCFET (Silicon Carbide)
900V
22A (Tc)
15V
155mOhm @ 15A, 15V
3.5V @ 3mA
17.3nC @ 15V
+18V, -8V
350pF @ 600V
-
83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
C3M0120100K
Cree/Wolfspeed
MOSFET N-CH 1000V 22A TO247-4L
7,656
C3M™
N-Channel
SiCFET (Silicon Carbide)
1000V
22A (Tc)
15V
155mOhm @ 15A, 15V
3.5V @ 3mA
21.5nC @ 15V
±15V
350pF @ 600V
-
83W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4L
TO-247-4
C3M0280090J-TR
Cree/Wolfspeed
MOSFET N-CH 900V 11A
19,056
C3M™
N-Channel
SiCFET (Silicon Carbide)
900V
11A (Tc)
15V
360mOhm @ 7.5A, 15V
3.5V @ 1.2mA
9.5nC @ 15V
+18V, -8V
150pF @ 600V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
E3M0280090D
Cree/Wolfspeed
E-SERIES 900V, 280 MOHM, G3 SIC
14,268
Automotive, AEC-Q101, E
N-Channel
SiCFET (Silicon Carbide)
900V
11.5A (Tc)
15V
360mOhm @ 7.5A, 15V
3.5V @ 1.2mA
9.5nC @ 15V
+18V, -8V
150pF @ 600V
-
54W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
E3M0120090D
Cree/Wolfspeed
E-SERIES 900V, 120 MOHM, G3 SIC
18,552
Automotive, AEC-Q101, E
N-Channel
SiCFET (Silicon Carbide)
900V
23A (Tc)
15V
155mOhm @ 15A, 15V
3.5V @ 3mA
17.3nC @ 15V
+18V, -8V
350pF @ 600V
-
97W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
E3M0065090D
Cree/Wolfspeed
E-SERIES 900V, 65 MOHM, G3 SIC M
16,920
Automotive, AEC-Q101, E
N-Channel
SiCFET (Silicon Carbide)
900V
35A (Tc)
15V
84.5mOhm @ 20A, 15V
3.5V @ 5mA
30.4nC @ 15V
+18V, -8V
660pF @ 600V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3