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Infineon Technologies 整流器-單

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類別半導體 / 二極管與整流器 / 整流器-單
制造商Infineon Technologies
記錄 720
頁面 17/24
圖片
型號
制造商
描述
庫存
數量
系列
二極管類型
電壓-直流反向(Vr)(最大值)
電流-平均整流(Io)
電壓-正向(Vf)(最大值)@如果
速度
反向恢復時間(trr)
當前-反向泄漏@ Vr
電容@ Vr,F
安裝類型
包裝/箱
供應商設備包裝
工作溫度-結點
IDH08S120AKSA1
Infineon Technologies
DIODE SCHOTTKY 1.2KV 7.5A TO220
5,022
CoolSiC™+
Silicon Carbide Schottky
1200V
7.5A (DC)
1.8V @ 7.5A
No Recovery Time > 500mA (Io)
0ns
180µA @ 1200V
380pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH08SG60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 8A TO220-2
6,372
CoolSiC™+
Silicon Carbide Schottky
600V
8A (DC)
2.1V @ 8A
No Recovery Time > 500mA (Io)
0ns
70µA @ 600V
240pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH09SG60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 9A TO220-2
3,618
CoolSiC™+
Silicon Carbide Schottky
600V
9A (DC)
2.1V @ 9A
No Recovery Time > 500mA (Io)
0ns
80µA @ 600V
280pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH10S120AKSA1
Infineon Technologies
DIODE SCHOTTKY 1200V 10A TO220-2
197
CoolSiC™+
Silicon Carbide Schottky
1200V
10A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
240µA @ 1200V
500pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH10SG60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 10A TO220-2
6,048
CoolSiC™+
Silicon Carbide Schottky
600V
10A (DC)
2.1V @ 10A
No Recovery Time > 500mA (Io)
0ns
90µA @ 600V
290pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH12SG60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 12A TO220-2
7,452
CoolSiC™+
Silicon Carbide Schottky
600V
12A (DC)
2.1V @ 12A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
310pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH15S120AKSA1
Infineon Technologies
DIODE SCHOTTKY 1200V 15A TO220-2
2,808
CoolSiC™+
Silicon Carbide Schottky
1200V
15A (DC)
1.8V @ 15A
No Recovery Time > 500mA (Io)
0ns
360µA @ 1200V
750pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDV02S60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 2A TO220-2FP
4,824
CoolSiC™+
Silicon Carbide Schottky
600V
2A (DC)
1.9V @ 2A
No Recovery Time > 500mA (Io)
0ns
15µA @ 600V
60pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C
IDV03S60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 3A TO220-2FP
2,772
CoolSiC™+
Silicon Carbide Schottky
600V
3A (DC)
1.9V @ 3A
No Recovery Time > 500mA (Io)
0ns
30µA @ 600V
90pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C
BAT6402WH6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 40V 120MA SCD80-2
6,156
-
Schottky
40V
120mA
750mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 30V
6pF @ 1V, 1MHz
Surface Mount
SC-80
SCD-80
150°C (Max)
BAS3020BH6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 30V 2A SOT363-6
7,200
-
Schottky
30V
2A (DC)
600mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
70pF @ 1V, 1MHz
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
-55°C ~ 125°C
BAT54WH6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 30V 200MA SOT323
5,022
-
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SC-70, SOT-323
PG-SOT323-3
150°C (Max)
IDB09E60ATMA1
Infineon Technologies
DIODE GEN PURP 600V 19.3A TO263
6,192
-
Standard
600V
19.3A (DC)
2V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
50µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-55°C ~ 175°C
IDB15E60
Infineon Technologies
DIODE GEN PURP 600V 29.2A TO263
4,140
-
Standard
600V
29.2A (DC)
2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
87ns
50µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-55°C ~ 175°C
IDB18E120ATMA1
Infineon Technologies
DIODE GEN PURP 1.2KV 31A TO263-3
6,858
-
Standard
1200V
31A (DC)
2.15V @ 18A
Fast Recovery =< 500ns, > 200mA (Io)
195ns
100µA @ 1200V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-55°C ~ 150°C
IDB45E60ATMA1
Infineon Technologies
DIODE GEN PURP 600V 71A TO263-3
5,292
-
Standard
600V
71A (DC)
2V @ 45A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
50µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-55°C ~ 175°C
IDD03E60BUMA1
Infineon Technologies
DIODE GEN PURP 600V 7.3A TO252-3
4,536
-
Standard
600V
7.3A (DC)
2V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
62ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
IDD09E60BUMA1
Infineon Technologies
DIODE GEN PURP 600V 19.3A TO252
6,606
-
Standard
600V
19.3A (DC)
2V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
IDD15E60BUMA2
Infineon Technologies
DIODE GEN PURP 600V 29.2A TO252
5,004
-
Standard
600V
29.2A (DC)
2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
87ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
IDP04E120
Infineon Technologies
DIODE GEN PURP 1.2KV 11.2A TO220
7,704
-
Standard
1200V
11.2A (DC)
2.15V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
115ns
100µA @ 1200V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 150°C
IDP06E60
Infineon Technologies
DIODE GEN PURP 600V 14.7A TO220
4,500
-
Standard
600V
14.7A (DC)
2V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
50µA @ 600V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDP09E120
Infineon Technologies
DIODE GEN PURP 1.2KV 23A TO220-2
8,856
-
Standard
1200V
23A (DC)
2.15V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
100µA @ 1200V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 150°C
IDP23E60
Infineon Technologies
DIODE GEN PURP 600V 41A TO220-2
7,668
-
Standard
600V
41A (DC)
2V @ 23A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
50µA @ 600V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDV04S60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 4A TO220-2FP
6,750
CoolSiC™+
Silicon Carbide Schottky
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
130pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C
IDV05S60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 5A TO220-2FP
5,526
CoolSiC™+
Silicon Carbide Schottky
600V
5A (DC)
1.7V @ 5A
No Recovery Time > 500mA (Io)
0ns
70µA @ 600V
240pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C
IDV06S60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 6A TO220-2FP
3,436
CoolSiC™+
Silicon Carbide Schottky
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
80µA @ 600V
280pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C
IDD03SG60CXTMA1
Infineon Technologies
DIODE SCHOTTKY 600V 3A TO252-3
4,536
CoolSiC™+
Silicon Carbide Schottky
600V
3A (DC)
2.3V @ 3A
No Recovery Time > 500mA (Io)
0ns
15µA @ 600V
60pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
IDB12E120ATMA1
Infineon Technologies
DIODE GEN PURP 1.2KV 28A TO263-3
7,398
-
Standard
1200V
28A (DC)
2.15V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
100µA @ 1200V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
-55°C ~ 150°C
IDB23E60ATMA1
Infineon Technologies
DIODE GEN PURP 600V 41A TO263-3
6,264
-
Standard
600V
41A (DC)
2V @ 23A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
50µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
-55°C ~ 175°C
IDV30E60C
Infineon Technologies
DIODE GEN PURP 600V 21A TO22FP
5,868
-
Standard
600V
21A
2.05V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
130ns
40µA @ 600V
-
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C