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Infineon Technologies 整流器-單

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類別半導體 / 二極管與整流器 / 整流器-單
制造商Infineon Technologies
記錄 720
頁面 14/24
圖片
型號
制造商
描述
庫存
數量
系列
二極管類型
電壓-直流反向(Vr)(最大值)
電流-平均整流(Io)
電壓-正向(Vf)(最大值)@如果
速度
反向恢復時間(trr)
當前-反向泄漏@ Vr
電容@ Vr,F
安裝類型
包裝/箱
供應商設備包裝
工作溫度-結點
SIDC06D60C6
Infineon Technologies
DIODE GEN PURP 600V 20A WAFER
6,120
-
Standard
600V
20A (DC)
1.95V @ 20A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC06D60E6X1SA3
Infineon Technologies
DIODE GEN PURP 600V 10A WAFER
8,820
-
Standard
600V
10A (DC)
1.25V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC06D60F6X1SA3
Infineon Technologies
DIODE GEN PURP 600V 15A WAFER
6,534
-
Standard
600V
15A (DC)
1.6V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC07D60AF6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 22.5A WAFER
2,610
-
Standard
600V
22.5A (DC)
1.6V @ 22.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC07D60E6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 15A WAFER
2,808
-
Standard
600V
15A (DC)
1.25V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
250µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC07D60F6X1SA2
Infineon Technologies
DIODE GEN PURP 600V 22.5A WAFER
3,096
-
Standard
600V
22.5A (DC)
1.6V @ 22.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC08D120F6X1SA3
Infineon Technologies
DIODE GEN PURP 1.2KV 7A WAFER
5,832
-
Standard
1200V
7A (DC)
2.1V @ 7A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC08D120H6X1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 10A WAFER
6,930
-
Standard
1200V
10A (DC)
1.6V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC08D60C6
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
2,844
-
Standard
600V
30A (DC)
1.95V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC08D60C6Y
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
3,006
-
Standard
600V
30A (DC)
1.95V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC09D60E6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 20A WAFER
2,214
-
Standard
600V
20A (DC)
1.7V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC09D60E6 UNSAWN
Infineon Technologies
DIODE GEN PURP 600V 20A WAFER
8,928
-
Standard
600V
20A (DC)
1.7V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC09D60E6YX1SA1
Infineon Technologies
DIODE GEN PURP 600V 20A WAFER
7,758
-
Standard
600V
20A (DC)
1.7V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC09D60F6X1SA2
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
6,300
-
Standard
600V
30A (DC)
1.6V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC10D120H6X1SA5
Infineon Technologies
DIODE GEN PURP 1.2KV 15A WAFER
5,652
-
Standard
1200V
15A (DC)
1.6V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC110D170HX1SA2
Infineon Technologies
DIODE GEN PURP 1.7KV 200A WAFER
7,794
-
Standard
1700V
200A (DC)
1.8V @ 200A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC11D60SIC3
Infineon Technologies
DIODE SCHOTTKY 600V 4A WAFER
2,358
-
Silicon Carbide Schottky
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
150pF @ 1V, 1MHz
Surface Mount
Die
Sawn on foil
-55°C ~ 175°C
SIDC14D120E6X1SA4
Infineon Technologies
DIODE GEN PURP 1.2KV 15A WAFER
3,312
-
Standard
1200V
15A (DC)
1.9V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC14D120F6X1SA3
Infineon Technologies
DIODE GEN PURP 1.2KV 15A WAFER
6,354
-
Standard
1200V
15A (DC)
2.1V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC14D120H6X1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 25A WAFER
8,604
-
Standard
1200V
25A (DC)
1.6V @ 25A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC14D60C6
Infineon Technologies
DIODE GEN PURP 600V 50A WAFER
3,132
-
Standard
600V
50A (DC)
1.9V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC14D60C6Y
Infineon Technologies
DIODE GEN PURP 600V 50A WAFER
6,354
-
Standard
600V
50A (DC)
1.9V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC14D60E6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
5,004
-
Standard
600V
30A (DC)
1.25V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC14D60E6YX1SA1
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
7,434
-
Standard
600V
30A (DC)
1.25V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC14D60F6X1SA2
Infineon Technologies
DIODE GEN PURP 600V 45A WAFER
3,870
-
Standard
600V
45A (DC)
1.6V @ 45A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC161D170HX1SA2
Infineon Technologies
DIODE GEN PURP 1.7KV 300A WAFER
8,856
-
Standard
1700V
300A (DC)
1.8V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC16D60SIC3
Infineon Technologies
DIODE SCHOTTKY 600V 5A WAFER
6,912
-
Silicon Carbide Schottky
600V
5A (DC)
1.7V @ 5A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
170pF @ 1V, 1MHz
Surface Mount
Die
Sawn on foil
-55°C ~ 175°C
SIDC19D60SIC3
Infineon Technologies
DIODE SCHOTTKY 600V 6A WAFER
2,466
-
Silicon Carbide Schottky
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
300pF @ 1V, 1MHz
Surface Mount
Die
Sawn on foil
-55°C ~ 175°C
SIDC20D60C6
Infineon Technologies
DIODE GEN PURP 600V 75A WAFER
7,452
-
Standard
600V
75A (DC)
1.9V @ 75A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC23D120E6X1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 25A WAFER
4,158
-
Standard
1200V
25A (DC)
1.9V @ 25A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C