Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 115/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET P-CH 55V 12A D2PAK |
8,478 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 12A (Tc) | 10V | 175mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 55V 19A D2PAK |
7,380 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 620pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 21A SUPER D2PAK |
3,924 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | SUPER D2-PAK | Super D2-Pak |
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Infineon Technologies |
MOSFET N-CH 75V 40A TO220FP |
2,448 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 40A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 3400pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 55V 41A TO-220FP |
2,718 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 41A (Tc) | 10V | 20mOhm @ 22A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3400pF @ 25V | - | 63W (Tc) | - | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 100V 7.7A TO-220FP |
2,358 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Ta) | - | 300mOhm @ 4.6A, 10V | 4V @ 250µA | 38nC @ 10V | - | 860pF @ 25V | - | - | - | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 55V 9.5A TO-220FP |
7,056 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 9.5A (Tc) | 10V | 175mOhm @ 5.4A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 29W (Tc) | - | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 55V 14A TO-220FP |
5,904 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 14A (Tc) | 10V | 100mOhm @ 7.8A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 620pF @ 25V | - | 37W (Tc) | - | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 2.8A SOT223 |
2,664 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 2.8A (Ta) | 10V | 75mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | 400pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 1.6A SOT223 |
6,084 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 10V | 220mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | ±20V | 160pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
8,892 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 44A DPAK |
6,948 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 1300pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 44A DPAK |
5,544 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 1300pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 13A DPAK |
7,992 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 13A (Tc) | 10V | 235mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | ±30V | 830pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 13A DPAK |
8,964 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 13A (Tc) | 10V | 235mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | ±30V | 830pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 13A DPAK |
7,956 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 13A (Tc) | 10V | 235mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | ±30V | 830pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
6,084 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 900pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
4,500 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 900pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
6,678 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 900pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 19A D-PAK |
4,824 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 19A (Tc) | 10V | 85mOhm @ 11A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 420pF @ 25V | - | 50W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 400V 1.7A DPAK |
4,302 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 1.7A (Ta) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 400V 1.7A DPAK |
7,920 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 1.7A (Ta) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 400V 1.7A DPAK |
6,444 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 1.7A (Ta) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 400V 1.7A DPAK |
6,930 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 1.7A (Ta) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 33A DPAK |
5,688 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 33A (Tc) | 10V | 31mOhm @ 18A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 750pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 33A DPAK |
4,014 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 33A (Tc) | 10V | 31mOhm @ 18A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 750pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 16A DPAK |
3,618 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 640pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 27A DPAK |
2,988 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 27A DPAK |
2,376 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 27A DPAK |
5,742 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |