Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 114/225
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制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET P-CH 12V 9.5A 8-SOIC |
2,142 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 9.5A (Ta) | 2.5V, 4.5V | 20mOhm @ 9.5A, 4.5V | 600mV @ 250µA | 74nC @ 5V | ±12V | 6000pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 5.3A 8-SOIC |
2,196 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 5.3A (Ta) | 2.7V, 4.5V | 62mOhm @ 2.9A, 4.5V | 700mV @ 250µA | 29nC @ 4.5V | ±12V | 780pF @ 15V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 5.3A 8-SOIC |
4,608 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 5.3A (Ta) | 2.7V, 4.5V | 62mOhm @ 2.9A, 4.5V | 700mV @ 250µA | 29nC @ 4.5V | ±12V | 780pF @ 15V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 2.2A 8-SOIC |
3,204 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | ±12V | 260pF @ 15V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 6.5A 8-SOIC |
4,734 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | ±20V | 650pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 6.8A 8-SOIC |
3,942 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.8A (Ta) | 2.7V, 4.5V | 35mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | ±12V | 650pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 12A 8-SOIC |
6,840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 13.5mOhm @ 6.6A, 10V | 1V @ 250µA | 79nC @ 10V | ±20V | 1800pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 5.8A 8-SOIC |
8,784 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 35mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | ±20V | 510pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 4.3A 8-SOIC |
8,424 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 2.7V, 4.5V | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | ±12V | 610pF @ 15V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 4.5A 8-SOIC |
4,950 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 4.5A (Ta) | 10V | 60mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | ±30V | 930pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 15A 8-SOIC |
8,082 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 15A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 3V @ 250µA | 42nC @ 4.5V | ±20V | 3100pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
5,220 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 10V, 16V | 8mOhm @ 14A, 16V | 4V @ 250µA | 59nC @ 10V | ±30V | 2410pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 12A 8-SOIC |
3,114 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta) | 2.8V, 10V | 9mOhm @ 12A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2480pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 12A 8-SOIC |
7,650 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta) | 4.5V, 10V | 10mOhm @ 12A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 2050pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
3,924 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 2.7V, 10V | 8mOhm @ 14A, 10V | 2V @ 250µA | 51nC @ 4.5V | ±12V | 3150pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 200V 1.2A 8-SOIC |
6,282 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 1.2A (Ta) | 10V | 730mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | ±30V | 280pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
2,412 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 12.5mOhm @ 11A, 10V | 3V @ 250µA | 23nC @ 4.5V | ±20V | 2100pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
3,240 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 2.8V, 10V | 12mOhm @ 11A, 10V | 2V @ 250µA | 32nC @ 4.5V | ±12V | 2530pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 40V 9.4A 8-SOIC |
6,840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 9.4A (Ta) | 4.5V, 10V | 15.5mOhm @ 9.4A, 10V | 2V @ 250µA | 34nC @ 4.5V | ±12V | 2460pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
2,286 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
8,496 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | Schottky Diode (Isolated) | 2.5W (Tc) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14.5A 8-SOIC |
4,230 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14.5A (Ta) | 4.5V | 8.5mOhm @ 15A, 4.5V | 1V @ 250µA | 75nC @ 5V | ±12V | 7300pF @ 16V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 17.6A 8-SOIC |
8,208 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 17.6A (Ta) | 4.5V | 7.5mOhm @ 15A, 4.5V | 1V @ 250µA | 86nC @ 5V | ±12V | 7300pF @ 16V | - | 3.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 28V 14A 8-SOIC |
6,210 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 28V | 14A (Ta) | 4.5V | 11mOhm @ 15A, 4.5V | 1V @ 250µA | 23nC @ 5V | ±12V | 1800pF @ 16V | - | 3.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 7A 8-SOIC |
3,042 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 30mOhm @ 7A, 10V | 1V @ 250µA | 27nC @ 10V | ±20V | 550pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 100V 6.8A D2PAK |
3,924 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 480mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 6.8A D2PAK |
2,304 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 480mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 14A D2PAK |
2,772 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 200mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 23A D2PAK |
8,910 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 117mOhm @ 11A, 10V | 4V @ 250µA | 97nC @ 10V | ±20V | 1300pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 55V 12A D2PAK |
7,902 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 12A (Tc) | 10V | 175mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |