Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 131/225
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制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 20V 49A DPAK |
5,472 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 49A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 810pF @ 10V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 49A DPAK |
3,420 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 49A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 810pF @ 10V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 49A DPAK |
8,604 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 49A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 810pF @ 10V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 7.3A 8-SOIC |
8,820 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 7.3A (Ta) | 10V | 22mOhm @ 4.4A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 1530pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 80V 9.3A 8-SOIC |
3,852 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 9.3A (Tc) | 10V | 15mOhm @ 5.6A, 10V | 4V @ 250µA | 53nC @ 10V | ±20V | 1510pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
3,024 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 10mOhm @ 13A, 10V | 2.25V @ 250µA | 14nC @ 4.5V | ±20V | 1210pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
5,652 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 13.8mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | ±20V | 770pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 67A D2PAK |
5,544 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 67A (Tc) | 4.5V, 10V | 7.9mOhm @ 21A, 10V | 2.55V @ 250µA | 13nC @ 4.5V | ±20V | 1220pF @ 10V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 59A D2PAK |
4,428 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 59A (Tc) | 4.5V, 10V | 9.5mOhm @ 21A, 10V | 2.25V @ 250µA | 15nC @ 4.5V | ±20V | 1210pF @ 15V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 59A D2PAK |
3,456 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 59A (Tc) | 4.5V, 10V | 9.5mOhm @ 21A, 10V | 2.25V @ 250µA | 15nC @ 4.5V | ±20V | 1210pF @ 15V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 92A D2PAK |
2,214 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 92A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | ±20V | 2150pF @ 10V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 92A D2PAK |
6,570 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 92A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | ±20V | 2150pF @ 10V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
7,614 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 10mOhm @ 13A, 10V | 2.25V @ 250µA | 14nC @ 4.5V | ±20V | 1210pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
5,850 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 13.8mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | ±20V | 770pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 17.2A 8-SOIC |
7,110 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36nC @ 4.5V | ±20V | 2910pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 161A DPAK |
8,568 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4380pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 21A 8-SOIC |
5,562 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 3.6mOhm @ 20A, 10V | 2.35V @ 250µA | 60nC @ 4.5V | ±12V | 6240pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 43A DPAK |
3,294 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 43A (Tc) | 4.5V, 10V | 13.8mOhm @ 15A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | ±20V | 780pF @ 15V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 37A DPAK |
7,542 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 37A (Tc) | 4.5V, 10V | 15mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | ±20V | 560pF @ 10V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 60A DPAK |
2,214 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 4.5V, 10V | 8.4mOhm @ 15A, 10V | 2.55V @ 250µA | 14nC @ 4.5V | ±20V | 1190pF @ 10V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 86A DPAK |
7,668 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 86A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | ±20V | 2330pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 150A D2PAK |
8,928 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | 3.8mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | ±20V | 4170pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 37A DPAK |
6,822 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 37A (Tc) | 4.5V, 10V | 15mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | ±20V | 560pF @ 10V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 50A D2PAK |
6,318 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 870pF @ 10V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 50A D2PAK |
5,148 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 870pF @ 10V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 36A D2PAK |
4,824 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 2.55V @ 250µA | 7.2nC @ 4.5V | ±20V | 550pF @ 10V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 17.2A 8-SOIC |
4,212 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36nC @ 4.5V | ±20V | 2910pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 27A DIRECTFET |
7,344 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.7mOhm @ 27A, 10V | 2.45V @ 250µA | 42nC @ 4.5V | ±20V | 4130pF @ 10V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 87A D2PAK |
5,274 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 87A (Tc) | 4.5V, 10V | 6.3mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | ±20V | 2130pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 31A DIRECTFET |
7,218 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 31A (Ta), 150A (Tc) | 4.5V, 10V | 2mOhm @ 31A, 10V | 2.45V @ 250µA | 69nC @ 4.5V | ±20V | 6290pF @ 10V | - | 1.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |