Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 153/225
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制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 25V 50A D2PAK |
5,724 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 8.9mOhm @ 30A, 10V | 2V @ 20µA | 13nC @ 5V | ±20V | 1642pF @ 15V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 30A D2PAK |
5,490 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 13.6mOhm @ 30A, 10V | 2V @ 20µA | 8.3nC @ 5V | ±20V | 1043pF @ 15V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 100A D2PAK |
4,158 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 2.7mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | ±20V | 8180pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 21A D2PAK |
8,082 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 21A (Tc) | 10V | 80mOhm @ 15A, 10V | 4V @ 44µA | 38.4nC @ 10V | ±20V | 865pF @ 25V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 35A D2PAK |
8,190 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 44mOhm @ 26.4A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 1570pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 42A D2PAK |
8,190 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 42A (Tc) | 4.5V, 10V | 12.6mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | ±20V | 1130pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 73A D2PAK |
3,150 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 73A (Tc) | 4.5V, 10V | 8.1mOhm @ 36A, 10V | 2V @ 55µA | 46.2nC @ 10V | ±20V | 1710pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK |
8,190 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 4.9mOhm @ 55A, 10V | 2V @ 110µA | 89.7nC @ 10V | ±20V | 3320pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK |
6,552 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 5.9mOhm @ 80A, 10V | 2V @ 80µA | 68nC @ 10V | ±20V | 2530pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 100A DPAK |
4,086 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 4.2mOhm @ 50A, 10V | 2V @ 100µA | 89.7nC @ 10V | ±20V | 3320pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-5 | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Infineon Technologies |
MOSFET N-CH 30V 30A DPAK |
4,122 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 6.7mOhm @ 30A, 10V | 2V @ 85µA | 68nC @ 10V | ±20V | 2530pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 30A DPAK |
7,668 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2V @ 50µA | 41.8nC @ 10V | ±20V | 1550pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TO-262 |
6,102 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 3mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | ±20V | 8180pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 100A TO-220AB |
5,778 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 7020pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TO-220AB |
8,334 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 3mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | ±20V | 8180pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 42A TO-220AB |
5,220 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 42A (Tc) | 4.5V, 10V | 12.9mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | ±20V | 1130pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 20V 6A 6-TSOP |
3,114 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 2.5V, 4.5V | 41mOhm @ 6A, 4.5V | 1.2V @ 40µA | 20nC @ 4.5V | ±12V | 1007pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 20V 4.7A 6-TSOP |
5,868 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 2.5V, 4.5V | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4nC @ 4.5V | ±12V | 654pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 11.1A 8-SOIC |
8,262 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 11.1A (Ta) | 4.5V, 10V | 13mOhm @ 11.1A, 10V | 2V @ 42µA | 21nC @ 5V | ±20V | 1280pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
3,114 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 7.8mOhm @ 13A, 10V | 2V @ 80µA | 33.7nC @ 5V | ±20V | 2213pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 12.7A 8-SOIC |
8,910 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12.7A (Ta) | 4.5V, 10V | 10mOhm @ 12.7A, 10V | 2V @ 55µA | 26.2nC @ 5V | ±20V | 1640pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 370MA SOT223 |
8,478 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 370mA (Ta) | 2.8V, 10V | 6Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4nC @ 10V | ±20V | 70pF @ 25V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT223 |
4,698 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | ±20V | 108pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT223 |
6,624 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 10V | 300mOhm @ 1.9A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 410pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT223 |
2,916 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 4.5V, 10V | 300mOhm @ 1.9A, 10V | 2V @ 460µA | 20nC @ 10V | ±20V | 460pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 1.8A SOT223 |
6,282 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4.5V, 10V | 300mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17nC @ 10V | ±20V | 368pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 60V 1.17A SOT-223 |
2,826 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.17A (Ta) | 4.5V, 10V | 800mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8nC @ 10V | ±20V | 160pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 100V 0.68A SOT223 |
5,184 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 680mA (Ta) | 4.5V, 10V | 1.8Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | ±20V | 146pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 250V 0.43A SOT223 |
8,406 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 250V | 430mA (Ta) | 4.5V, 10V | 4Ohm @ 430mA, 10V | 2V @ 370µA | 15.1nC @ 10V | ±20V | 262pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT223 |
7,848 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 2.8V, 4.5V | 6Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8nC @ 10V | ±20V | 95pF @ 25V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |