Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 156/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET P-CH 30V 9.2A 8DSO |
6,588 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 9.2A (Ta) | 10V | 13mOhm @ 11.3A, 10V | 2.2V @ 140µA | 81nC @ 10V | ±25V | 3520pF @ 25V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | P-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 7.4A 8DSO |
8,802 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 7.4A (Ta) | 10V | 20mOhm @ 9.1A, 10V | 1.5V @ 100µA | 54nC @ 10V | ±25V | 2330pF @ 25V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 60V 3.44A 8DSO |
8,964 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 3.44A (Ta) | 10V | 130mOhm @ 3.44A, 10V | 4V @ 1mA | 30nC @ 10V | ±20V | 875pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
7,776 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 45Ohm @ 120mA, 10V | 2.3V @ 94µA | 6.6nC @ 10V | ±20V | 150pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
3,870 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 45Ohm @ 120mA, 10V | 2.3V @ 94µA | 6.6nC @ 10V | ±20V | 150pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
8,334 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 45Ohm @ 120mA, 10V | 2.3V @ 94µA | 6.6nC @ 10V | ±20V | 150pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT-223 |
7,074 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | ±20V | 108pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT-223 |
6,912 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | ±20V | 108pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
4,860 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | ±20V | 146pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
3,114 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | ±20V | 146pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
5,256 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | ±20V | 146pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
3,006 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | ±20V | 146pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223 |
5,868 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 0V, 10V | 1.8Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | ±20V | 430pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223 |
6,606 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 0V, 10V | 1.8Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | ±20V | 430pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223 |
4,356 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 0V, 10V | 1.8Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | ±20V | 430pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 1.1A SOT-223 |
8,532 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.1A (Ta) | 4.5V, 10V | 700mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | ±20V | 364pF @ 25V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223 |
3,870 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 4.5V, 10V | 1.8Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | ±20V | 357pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 400V 500MA SOT-223 |
7,020 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 400V | 500mA (Ta) | 10V | 3Ohm @ 500mA, 10V | 4V @ 1mA | - | ±20V | 400pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 400V 500MA SOT-223 |
6,534 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 400V | 500mA (Ta) | 10V | 3Ohm @ 500mA, 10V | 4V @ 1mA | - | ±20V | 400pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 500V 400MA SOT-223 |
2,520 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 500V | 400mA (Ta) | 10V | 4Ohm @ 400mA, 10V | 4V @ 1mA | - | ±20V | 400pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 800V 190MA SOT-223 |
2,448 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 800V | 190mA (Ta) | 10V | 20Ohm @ 190mA, 10V | 4V @ 1mA | - | ±20V | 230pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 800V 190MA SOT-223 |
5,472 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 800V | 190mA (Ta) | 10V | 20Ohm @ 190mA, 10V | 4V @ 1mA | - | ±20V | 230pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 2.6A SOT-223 |
8,928 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.6A (Ta) | 4.5V, 10V | 90mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | ±20V | 380pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT-223 |
7,398 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | ±20V | 340pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT-223 |
2,682 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | ±20V | 340pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 400V 170MA SOT-223 |
4,860 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 400V | 170mA (Ta) | 4.5V, 10V | 25Ohm @ 170mA, 10V | 2.3V @ 94µA | 5.9nC @ 10V | ±20V | 154pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 1.7A SOT-223 |
2,700 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.7A (Ta) | 5V | 310mOhm @ 1.7A, 5V | 2V @ 1mA | - | ±14V | 520pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 1.7A SOT-223 |
3,240 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.7A (Ta) | 10V | 300mOhm @ 1.7A, 10V | 4V @ 1mA | - | ±20V | 550pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 55V 5.2A SOT-223 |
4,662 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 5.2A (Ta) | 4.5V, 10V | 33mOhm @ 2.6A, 10V | 2V @ 50µA | 42nC @ 10V | ±20V | 1390pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 60V 2.9A SOT-223 |
45,504 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 130mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | ±20V | 875pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |