Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 31/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 40V 240A AUTO |
15,300 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | 7437pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 100V 127A D2PAK |
29,076 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6860pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 120A TO220-3 |
7,920 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.5mOhm @ 100A, 10V | 4V @ 200µA | 250nC @ 10V | ±20V | 20000pF @ 20V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 195A |
18,312 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 1.95mOhm @ 100A, 10V | 2.4V @ 250µA | 255nC @ 4.5V | ±20V | 15330pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
25,590 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 31A TO220 |
20,100 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | ±20V | 1952pF @ 400V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 560V 21A TO-247 |
8,148 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 49V 80A TO220-7 |
9,420 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 49V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232nC @ 10V | ±20V | 4800pF @ 25V | Temperature Sensing Diode | 300W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | PG-TO220-7-12 | TO-220-7 |
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Infineon Technologies |
MOSFET NCH 200V 72A D2PAK |
7,589 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | 10V | 22mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 5380pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 100A TO262-3 |
6,348 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 100A (Tc) | 8V, 10V | 7.5mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | ±20V | 5470pF @ 75V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 200V 75A TO-247AC |
18,360 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 75A (Tc) | 10V | 21mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 5380pF @ 50V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 700V 31.2A TO220 |
22,284 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 700V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 900V 15A TO-220 |
9,960 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | ±20V | 2400pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 38A TO-247 |
8,112 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | ±20V | 2780pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT23 |
83,682 |
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Automotive, AEC-Q101, SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2.3V @ 26µA | 1.5nC @ 10V | ±20V | 56pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 8.8A PQFN |
29,850 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.8A (Ta), 19A (Tc) | 4.5V, 10V | 16mOhm @ 8.5A, 10V | 2.35V @ 25µA | 8.7nC @ 10V | ±20V | 600pF @ 25V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-6 | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 18A 8TDSON |
51,378 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta), 63A (Tc) | 4.5V, 10V | 4.5mOhm @ 30A, 10V | 2V @ 250µA | 13nC @ 10V | ±20V | 870pF @ 15V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
CONSUMER |
23,520 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 7.6A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4nC @ 10V | ±20V | 280pF @ 100V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
COOLMOS P7 700V SOT-223 |
25,728 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 4.5A (Tc) | 10V | 1.2Ohm @ 900mA, 10V | 3.5V @ 40µA | 4.8nC @ 10V | ±16V | 174pF @ 400V | - | 6.3W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
COOLMOS P7 700V SOT-223 |
25,320 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6.5A (Tc) | 10V | 750mOhm @ 1.4A, 10V | 3.5V @ 70µA | 8.3nC @ 10V | ±16V | 306pF @ 400V | - | 6.7W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
COOLMOS P7 800V SOT-223 |
24,840 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 2.5A (Tc) | 10V | 2.4Ohm @ 800mA, 10V | 3.5V @ 40µA | 7.5nC @ 10V | ±20V | 150pF @ 500V | - | 6.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET N-CHANNEL 30V 17A 8TDSON |
51,102 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta) | 4.5V, 10V | 4.4mOhm @ 8A, 10V | 2V @ 250µA | 15nC @ 10V | ±20V | 950pF @ 15V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
TRENCH <= 40V |
50,964 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 17A (Ta), 49A (Tc), 59A (Tc) | 4.5V, 10V | 5.9mOhm @ 50A, 10V | 2.3V @ 250µA | 9.4nC @ 10V | ±20V | 830pF @ 20V | - | 3W (Ta), 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 70A 8TDSON-34 |
51,726 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Tc) | 7V, 10V | 4.6mOhm @ 35A, 10V | 3.4V @ 17µA | 24.2nC @ 10V | ±20V | 1430pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V TO-252 |
20,232 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15.1A (Tc) | 10V | 400mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | Super Junction | 118W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 950V 4A SOT223 |
22,890 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 4A (Tc) | 10V | 2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 10nC @ 10V | ±20V | 330pF @ 400V | - | 7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET N-CH 950V 4A TO252 |
19,272 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 4A (Tc) | 10V | 2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 10nC @ 10V | ±20V | 330pF @ 400V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 26A TDSON-8 |
47,742 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 26A (Ta), 100A (Tc) | 4.5V, 10V | 2.3mOhm @ 30A, 10V | 2V @ 250µA | 26nC @ 10V | ±20V | 1600pF @ 15V | - | 2.5W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 20V 27A DIRECTFET |
33,000 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.7mOhm @ 27A, 10V | 2.45V @ 250µA | 42nC @ 4.5V | ±20V | 4130pF @ 10V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 950V 6A SOT223 |
27,492 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 6A (Tc) | 10V | 1.2Ohm @ 2.7A, 10V | 3.5V @ 140µA | 15nC @ 10V | ±20V | 478pF @ 400V | - | 7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |