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Micron Technology Inc. 內存

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類別半導體 / 內存IC / 內存
制造商Micron Technology Inc.
記錄 8,604
頁面 216/287
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制造商
描述
庫存
數量
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內存類型
內存格式
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內存大小
內存接口
時鐘頻率
寫周期-字,頁
訪問時間
電壓-供電
工作溫度
安裝類型
包裝/箱
供應商設備包裝
EDF8164A3PD-GD-F-D
Micron Technology Inc.
IC DRAM 8G PARALLEL 800MHZ FBGA
2,304
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
8Gb (128M x 64)
Parallel
800MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TC)
-
-
-
MT28HL16GJBA3ERK-0SCT
Micron Technology Inc.
NOR FLASH 512MX32 PLASTIC 3.3V
2,124
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT28HL16GJBB3ERK-0SCT
Micron Technology Inc.
NOR FLASH 512MX32 PLASTIC 3.3V
6,858
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT28HL32GQBB3ERK-0SCT
Micron Technology Inc.
NOR FLASH 1GX32 PLASTIC 3.3V
8,028
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53B256M64D2NL-062 XT ES:C
Micron Technology Inc.
IC DRAM 16G 1600MHZ FBGA
3,708
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (256M x 64)
-
1600MHz
-
-
1.1V
-30°C ~ 105°C (TC)
-
-
-
MT53B256M64D2NL-062 XT:B TR
Micron Technology Inc.
IC DRAM 16G 1600MHZ FBGA
7,650
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (256M x 64)
-
1600MHz
-
-
1.1V
-30°C ~ 105°C (TC)
-
-
-
MT53B2DANL-DC
Micron Technology Inc.
LPDDR4 16G 256MX64 FBGA DDP
7,956
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
-
-
-
-
-
-
-
-
-
-
MT29E1HT08ELHBBG1-3ES:B TR
Micron Technology Inc.
IC FLASH 1.5T PARALLEL 272VBGA
2,466
-
Non-Volatile
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
-
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29C1G12MAAIYAMR-5 AIT TR
Micron Technology Inc.
IC FLASH RAM 1G PARALLEL 200MHZ
3,114
-
Non-Volatile
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (128M x 8)(NAND), 512M (16M x 32)(LPDRAM)
Parallel
200MHz
-
-
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
130-VFBGA
130-VFBGA (8x9)
MT29C1G12MAAJVAKC-5 IT TR
Micron Technology Inc.
MCP 64MX16/32MX16 PLASTIC GREEN
4,806
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29C2DBGM-DC TR
Micron Technology Inc.
MASSFLASH/LPDDR2 8G
3,544
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29C3DAMF-DC TR
Micron Technology Inc.
MASSFLASH/LPDDR2 8G
8,190
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29C3DBAN-DC TR
Micron Technology Inc.
MASSFLASH/LPDDR2 12G
4,014
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29C4G48MAYBBAHK-48 AIT TR
Micron Technology Inc.
IC FLASH RAM 4G PARALLEL 208MHZ
3,960
-
Non-Volatile
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
4Gb (512M x 8)(NAND), 2G (64M x 32)(LPDRAM)
Parallel
208MHz
-
-
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
137-VFBGA
137-VFBGA (13x10.5)
MT29C4G96MAZBBCJV-48 IT TR
Micron Technology Inc.
IC FLASH RAM 4G PARALLEL 208MHZ
3,526
-
Non-Volatile
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
4Gb (256M x 16)(NAND), 4Gb (128M x 32)(LPDRAM)
Parallel
208MHz
-
-
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
168-VFBGA
168-VFBGA (12x12)
MT29C8G96MAZBBDKD-48 IT TR
Micron Technology Inc.
IC FLASH RAM 8G PARALLEL 208MHZ
7,650
-
Non-Volatile
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
8Gb (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)
Parallel
208MHz
-
-
1.7V ~ 1.9V
-40°C ~ 85°C (TA)
-
-
-
MT29E1HT08EMHBBJ4-3ES:B TR
Micron Technology Inc.
IC FLASH 1.5T PARALLEL 132VBGA
6,570
-
Non-Volatile
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
-
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
132-VBGA (12x18)
MT29E1T08CMHBBJ4-3ES:B TR
Micron Technology Inc.
IC FLASH 1T PARALLEL 333MHZ
5,256
-
Non-Volatile
FLASH
FLASH - NAND
1Tb (128G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
132-VBGA (12x18)
MT29E1T08CPCBBH8-6:B TR
Micron Technology Inc.
IC FLASH 1T PARALLEL 167MHZ
7,884
-
Non-Volatile
FLASH
FLASH - NAND
1Tb (128G x 8)
Parallel
167MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
152-LBGA
152-LBGA (14x18)
MT29E1T08CUCBBH8-6:B TR
Micron Technology Inc.
IC FLASH 1T PARALLEL 167MHZ
2,016
-
Non-Volatile
FLASH
FLASH - NAND
1Tb (128G x 8)
Parallel
167MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
152-LBGA (14x18)
MT29E1T208ECHBBJ4-3:B TR
Micron Technology Inc.
IC FLASH 1.125T PARALLEL 132VBGA
8,460
-
Non-Volatile
FLASH
FLASH - NAND
1.125Tb (144G x 8)
Parallel
-
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
132-VBGA (12x18)
MT29E1T208ECHBBJ4-3ES:B TR
Micron Technology Inc.
IC FLASH 1.125T PARALLEL 132VBGA
5,184
-
Non-Volatile
FLASH
FLASH - NAND
1.125Tb (144G x 8)
Parallel
-
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
132-VBGA (12x18)
MT29E256G08CECBBH6-6:B TR
Micron Technology Inc.
IC FLASH 256G PARALLEL 167MHZ
8,514
-
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
167MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
152-VBGA
152-VBGA (14x18)
MT29E2T08CTCBBJ7-6:B TR
Micron Technology Inc.
IC FLASH 2T PARALLEL 167MHZ
8,046
-
Non-Volatile
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
167MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
152-LBGA
152-LBGA (14x18)
MT29E2T08CUHBBM4-3ES:B TR
Micron Technology Inc.
IC FLASH 2T PARALLEL 333MHZ
2,547
-
Non-Volatile
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29E384G08EBHBBJ4-3:B TR
Micron Technology Inc.
IC FLASH 384G PARALLEL 333MHZ
8,586
-
Non-Volatile
FLASH
FLASH - NAND
384Gb (48G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)
MT29E384G08EBHBBJ4-3ES:B TR
Micron Technology Inc.
IC FLASH 384G PARALLEL 333MHZ
5,040
-
Non-Volatile
FLASH
FLASH - NAND
384Gb (48G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)
MT29E3T08EUHBBM4-3ES:B TR
Micron Technology Inc.
IC FLASH 3T PARALLEL 333MHZ
7,956
-
Non-Volatile
FLASH
FLASH - NAND
3Tb (384G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29E4T08CTHBBM5-3ES:B TR
Micron Technology Inc.
IC FLASH 4T PARALLEL 333MHZ
5,760
-
Non-Volatile
FLASH
FLASH - NAND
4Tb (512G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29E512G08CEHBBJ4-3ES:B TR
Micron Technology Inc.
IC FLASH 512G PARALLEL 333MHZ
4,428
-
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)