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Micron Technology Inc. 內存

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類別半導體 / 內存IC / 內存
制造商Micron Technology Inc.
記錄 8,604
頁面 42/287
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描述
庫存
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內存接口
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包裝/箱
供應商設備包裝
MT53B512M32D2NP-053 WT:C TR
Micron Technology Inc.
IC DRAM 16G 1866MHZ
2,232
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MT53D256M64D4KA-046 XT:B TR
Micron Technology Inc.
IC DRAM 16G 2133MHZ
7,020
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (256M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 105°C (TC)
-
-
-
MT53D256M64D4NY-046 XT:B TR
Micron Technology Inc.
IC DRAM 16G 2133MHZ
8,208
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (256M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 105°C (TC)
-
-
-
MT53D512M32D2DS-053 WT:D TR
Micron Technology Inc.
IC DRAM 16G 1866MHZ
5,418
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MT53E512M32D2NP-046 WT:E TR
Micron Technology Inc.
LPDDR4 16G 512MX32 FBGA WT DDP
4,086
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53D512M32D2DS-046 WT:D TR
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
5,796
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
2.133GHz
-
-
0.6V, 1.1V
-30°C ~ 85°C
Surface Mount
-
-
MT53E384M32D2DS-046 AUT:E TR
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
7,380
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
12Gb (384M x 32)
-
2.133GHz
-
-
0.6V, 1.1V
-40°C ~ 125°C (TC)
Surface Mount
-
-
MT53E384M32D2DS-053 AUT:E TR
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
8,424
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
12Gb (384M x 32)
-
1.866GHz
-
-
0.6V, 1.1V
-40°C ~ 125°C (TC)
Surface Mount
-
-
MT29F32G08ABCABH1-10Z:A TR
Micron Technology Inc.
IC FLASH 32G PARALLEL 100VBGA
8,820
-
Non-Volatile
FLASH
FLASH - NAND
32Gb (4G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-VFBGA
100-VBGA (12x18)
MT29F32G08ABAAAWP-Z:A
Micron Technology Inc.
IC FLASH 32G PARALLEL 48TSOP
7,038
-
Non-Volatile
FLASH
FLASH - NAND
32Gb (4G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
MT29F32G08ABCABH1-10Z:A
Micron Technology Inc.
IC FLASH 32G PARALLEL 100VBGA
6,624
-
Non-Volatile
FLASH
FLASH - NAND
32Gb (4G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-VFBGA
100-VBGA (12x18)
MTFC16GJGDQ-AIT Z TR
Micron Technology Inc.
IC FLASH 128G MMC 100LBGA
6,930
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
MMC
-
-
-
1.65V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-LBGA
100-LBGA (14x18)
MT53B256M64D2TP-062 L XT:C
Micron Technology Inc.
IC DRAM 16G 1600MHZ FBGA
8,676
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (256M x 64)
-
1600MHz
-
-
1.1V
-
-
-
-
MT53B256M64D2TP-062 XT:C
Micron Technology Inc.
IC DRAM 16G 1600MHZ FBGA
6,480
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (256M x 64)
-
1600MHz
-
-
1.1V
-
-
-
-
MT53D256M64D4KA-046 XT:B
Micron Technology Inc.
IC DRAM 16G 2133MHZ
3,492
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (256M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 105°C (TC)
-
-
-
MT53D256M64D4NY-046 XT:B
Micron Technology Inc.
IC DRAM 16G 2133MHZ
4,302
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (256M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 105°C (TC)
-
-
-
MT53B256M64D2PX-062 XT:C
Micron Technology Inc.
IC DRAM 16G 1600MHZ FBGA
5,724
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (256M x 64)
-
1600MHz
-
-
1.1V
-30°C ~ 105°C (TC)
-
-
-
MT53E256M64D4NZ-053 WT:B TR
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
6,264
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E256M64D4NZ-053 WT:B
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
3,348
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53D512M32D2DS-053 WT:D
Micron Technology Inc.
IC DRAM 16G 1866MHZ
11,209
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MT53B512M32D2NP-053 WT:C
Micron Technology Inc.
IC DRAM 16G 1866MHZ
6,012
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MT53E512M32D2NP-046 WT:E
Micron Technology Inc.
LPDDR4 16G 512MX32 FBGA WT DDP
354
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53D512M32D2DS-046 WT:D
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
4,896
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
2.133GHz
-
-
0.6V, 1.1V
-30°C ~ 85°C
Surface Mount
-
-
MT53E384M32D2DS-046 AUT:E
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
6,876
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
12Gb (384M x 32)
-
2.133GHz
-
-
0.6V, 1.1V
-40°C ~ 125°C (TC)
Surface Mount
-
-
MT53E384M32D2DS-053 AUT:E
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
4,968
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
12Gb (384M x 32)
-
1.866GHz
-
-
0.6V, 1.1V
-40°C ~ 125°C (TC)
Surface Mount
-
-
EDBA164B2PF-1D-F-D
Micron Technology Inc.
IC DRAM 16G PARALLEL 533MHZ
2,435
-
Volatile
DRAM
SDRAM - Mobile LPDDR2
16Gb (256M x 64)
Parallel
533MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TC)
Surface Mount
-
-
EDBA164B2PR-1D-F-D
Micron Technology Inc.
IC DRAM 16G PARALLEL 216FBGA
6,768
-
Volatile
DRAM
SDRAM - Mobile LPDDR2
16Gb (256M x 64)
Parallel
533MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TC)
Surface Mount
216-VFBGA
216-FBGA (12x12)
EDBA232B2PB-1D-F-D
Micron Technology Inc.
IC DRAM 16G PARALLEL 533MHZ
1,393
-
Volatile
DRAM
SDRAM - Mobile LPDDR2
16Gb (512M x 32)
Parallel
533MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TC)
Surface Mount
168-VFBGA
168-FBGA (12x12)
EDBA164B2PR-1D-F-R TR
Micron Technology Inc.
IC DRAM 16G PARALLEL 216FBGA
5,904
-
Volatile
DRAM
SDRAM - Mobile LPDDR2
16Gb (256M x 64)
Parallel
533MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TC)
Surface Mount
216-VFBGA
216-FBGA (12x12)
MTFC16GJGDQ-AIT Z
Micron Technology Inc.
IC FLASH 128G MMC
4,320
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
MMC
-
-
-
1.65V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-LBGA
100-LBGA (14x18)