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數百萬庫存的電子零件。 接受缺貨訂單。 24小時內的價格和交貨時間報價。

APTM100H46FT3G

APTM100H46FT3G

僅供參考

型號 APTM100H46FT3G
PNEDA編號 APTM100H46FT3G
描述 MOSFET 4N-CH 1000V 19A SP3
制造商 Microsemi
單價 請求報價
庫存 3,204
倉庫 Shipped from Hong Kong SAR
預計交貨 五月 4 - 五月 9 (選擇加急運輸)
Guarantee 可達壹年的[PNEDA-Warranty]*

APTM100H46FT3G資源

品牌 Microsemi
ECAD Module ECAD
制造商零件編號APTM100H46FT3G
類別半導體晶體管晶體管-FET,MOSFET-陣列

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APTM100H46FT3G規格

制造商Microsemi Corporation
系列POWER MOS 8™
FET類型4 N-Channel (H-Bridge)
FET功能Standard
漏極至源極電壓(Vdss)1000V (1kV)
電流-25°C時的連續漏極(Id)19A
Rds On(Max)@ Id,Vgs552mOhm @ 16A, 10V
Vgs(th)(最大)@ ID5V @ 2.5mA
門電荷(Qg)(最大值)@ Vgs260nC @ 10V
輸入電容(Ciss)(最大值)@ Vds6800pF @ 25V
功率-最大357W
工作溫度-40°C ~ 150°C (TJ)
安裝類型Chassis Mount
包裝/箱SP3
供應商設備包裝SP3

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