整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 1004/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
DIODE SCHOTTKY 60V 1A DO41 |
5,220 |
|
- | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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|
Nexperia |
DIODE SCHOTTKY 12V 0.1A SOD962 |
3,490 |
|
- | Schottky | 12V | 100mA | 200mV @ 30mA | Fast Recovery =< 500ns, > 200mA (Io) | 2.2ns | 2mA @ 12V | 26pF @ 1V, 1MHz | Surface Mount | 0201 (0603 Metric) | DSN0603-2 | 125°C (Max) |
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Comchip Technology |
DIODE SCHOTTKY 20V 1A DO214AC |
4,752 |
|
- | Schottky | 20V | 1A (DC) | 330mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 160pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -50°C ~ 100°C |
|
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Microsemi |
DIODE SCHOTTKY 5A 30V TOPHAT |
5,024 |
|
- | Schottky | 30V | 5A | 370mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 30V | - | Through Hole | Axial | Axial | -65°C ~ 125°C |
|
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 150A D-67 |
6,498 |
|
- | Schottky | 20V | 150A | 580mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
|
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 150A D-67 |
6,840 |
|
- | Schottky, Reverse Polarity | 20V | 150A | 580mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
|
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY 30V 150A D-67 |
2,484 |
|
- | Schottky | 30V | 150A | 580mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 30V | - | Chassis Mount | D-67 | D-67 | -55°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 30V 150A D-67 |
7,866 |
|
- | Schottky, Reverse Polarity | 30V | 150A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 30V | - | Chassis Mount | D-67 | D-67 | - |
|
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY 35V 150A D-67 |
4,896 |
|
- | Schottky | 35V | 150A | 600mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 35V | - | Chassis Mount | D-67 | D-67 | - |
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY 35V 150A D-67 |
7,668 |
|
- | Schottky, Reverse Polarity | 35V | 150A | 600mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 35V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 150A D-67 |
5,670 |
|
- | Schottky | 40V | 150A | 600mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Chassis Mount | D-67 | D-67 | - |
|
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 150A D-67 |
3,294 |
|
- | Schottky, Reverse Polarity | 40V | 150A | 600mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Chassis Mount | D-67 | D-67 | - |
|
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 150A D-67 |
3,780 |
|
- | Schottky | 45V | 150A | 600mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 45V | - | Chassis Mount | D-67 | D-67 | - |
|
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GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 150A D-67 |
3,348 |
|
- | Schottky, Reverse Polarity | 45V | 150A | 600mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 45V | - | Chassis Mount | D-67 | D-67 | - |
|
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GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 200A D-67 |
6,282 |
|
- | Schottky | 20V | 200A | 580mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
|
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GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 200A D-67 |
3,042 |
|
- | Schottky, Reverse Polarity | 20V | 200A | 580mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 30V 200A D-67 |
3,526 |
|
- | Schottky | 30V | 200A | 580mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 30V | - | Chassis Mount | D-67 | D-67 | -55°C ~ 150°C |
|
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY 30V 200A D-67 |
8,622 |
|
- | Schottky, Reverse Polarity | 30V | 200A | 580mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 30V | - | Chassis Mount | D-67 | D-67 | -55°C ~ 150°C |
|
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GeneSiC Semiconductor |
DIODE SCHOTTKY 35V 200A D-67 |
5,274 |
|
- | Schottky | 35V | 200A | 600mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 200V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 35V 200A D-67 |
7,488 |
|
- | Schottky, Reverse Polarity | 35V | 200A | 600mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 200V | - | Chassis Mount | D-67 | D-67 | - |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 200A D-67 |
6,156 |
|
- | Schottky | 40V | 200A | 600mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Chassis Mount | D-67 | D-67 | - |
|
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GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 200A D-67 |
2,286 |
|
- | Schottky, Reverse Polarity | 40V | 200A | 600mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Chassis Mount | D-67 HALF-PAK | D-67 | - |
|
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GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 200A D-67 |
4,050 |
|
- | Schottky | 45V | 200A | 600mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 45V | - | Chassis Mount | D-67 | D-67 | -55°C ~ 150°C |
|
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 200A D-67 |
4,104 |
|
- | Schottky, Reverse Polarity | 45V | 200A | 600mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 45V | - | Chassis Mount | D-67 | D-67 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A TO277A |
4,608 |
|
Automotive, AEC-Q101 | Standard | 200V | 6A | 1.05V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A TO277A |
5,166 |
|
Automotive, AEC-Q101 | Standard | 200V | 6A | 1.05V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 8A TO220AC |
5,904 |
|
Automotive, AEC-Q101 | Standard | 50V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A TO220AC |
2,178 |
|
Automotive, AEC-Q101 | Standard | 100V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO220AC |
4,662 |
|
Automotive, AEC-Q101 | Standard | 200V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 8A TO220AC |
2,754 |
|
Automotive, AEC-Q101 | Standard | 400V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |