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整流器-單

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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 1015/1165
圖片
型號
制造商
描述
庫存
數量
系列
二極管類型
電壓-直流反向（Vr）（最大值）
電流-平均整流（Io）
電壓-正向（Vf）（最大值）@如果
速度
反向恢復時間（trr）
當前-反向泄漏@ Vr
電容@ Vr，F
安裝類型
包裝/箱
供應商設備包裝
工作溫度-結點
IRD3CH24DF6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
4,590
-
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH31DB6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
7,398
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH31DD6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
7,344
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH31DF6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
2,358
-
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH42DB6
Infineon Technologies
DIODE GEN PURP 1.2KV 75A DIE
3,384
-
Standard
1200V
75A
2.7V @ 75A
Fast Recovery =< 500ns, > 200mA (Io)
285ns
1.5µA @ 1200V
-
Surface Mount
Die
Die
-40°C ~ 150°C
IRD3CH42DD6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
5,364
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH42DF6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
2,934
-
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH53DB6
Infineon Technologies
DIODE GEN PURP 1.2KV 100A DIE
2,124
-
Standard
1200V
100A
2.7V @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
270ns
2µA @ 1200V
-
Surface Mount
Die
Die
-40°C ~ 150°C
IRD3CH53DD6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
4,032
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH53DF6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
7,236
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH5BD6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
2,556
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH5DB6
Infineon Technologies
DIODE GEN PURP 1.2KV 5A DIE
7,254
-
Standard
1200V
5A
2.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
96ns
100nA @ 1200V
-
Surface Mount
Die
Die
-40°C ~ 150°C
IRD3CH82DB6
Infineon Technologies
DIODE GEN PURP 1.2KV 150A DIE
8,064
-
Standard
1200V
150A
2.7V @ 150A
Fast Recovery =< 500ns, > 200mA (Io)
355ns
3µA @ 1200V
-
Surface Mount
Die
Die
-40°C ~ 150°C
IRD3CH82DD6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
2,052
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH82DF6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
6,768
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH9DB6
Infineon Technologies
DIODE GEN PURP 1.2KV 10A DIE
8,982
-
Standard
1200V
10A
2.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
154ns
200nA @ 1200V
-
Surface Mount
Die
Die
-40°C ~ 150°C
IRD3CH9DD6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
3,924
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH9DF6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
4,752
*
-
-
-
-
-
-
-
-
-
-
-
-
1N4007TA
SMC Diode Solutions
DIODE GEN PURP 1KV 1A DO41
5,310
-
Standard
1000V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 125°C
1N5402TA
SMC Diode Solutions
DIODE GEN PURP 200V 3A DO201AD
2,592
-
Standard
200V
3A
1.2V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
FR107TA
SMC Diode Solutions
DIODE GEN PURP 1KV 1A DO41
7,398
-
Standard
1000V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
FR3KTR
SMC Diode Solutions
DIODE GEN PURP 800V 3A SMC
3,402
-
Standard
800V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 150°C
UF4004TA
SMC Diode Solutions
DIODE GEN PURP 400V 1A DO41
3,744
-
Standard
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
UF4007TA
SMC Diode Solutions
DIODE GEN PURP 1KV 1A DO41
4,590
-
Standard
1000V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
BYW76RAS15-10-PH
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 3A SOD64
4,284
-
Standard
600V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
LL101A-13
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 60V 30MA SOD80
5,148
Automotive, AEC-Q101
Schottky
60V
30mA (DC)
410mV @ 1mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80 MiniMELF
125°C (Max)
LL101A-7
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 60V 30MA SOD80
請求報價
Automotive, AEC-Q101
Schottky
60V
30mA (DC)
410mV @ 1mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80 MiniMELF
125°C (Max)
LL101B-13
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
2,916
Automotive, AEC-Q101
Schottky
50V
30mA (DC)
400mV @ 1mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 40V
2.1pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80 MiniMELF
125°C (Max)
LL101B-7
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
2,394
Automotive, AEC-Q101
Schottky
50V
30mA (DC)
400mV @ 1mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 40V
2.2pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80 MiniMELF
125°C (Max)
LL101C-13
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V 30MA SOD80
5,346
Automotive, AEC-Q101
Schottky
40V
30mA (DC)
390mV @ 1mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 30V
2.2pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80 MiniMELF
125°C (Max)