整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 1033/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC |
6,732 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC |
5,724 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC |
7,074 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC |
2,898 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC |
6,498 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC |
4,266 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY DUAL TO-263AB |
8,838 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY DUAL TO-263AB |
6,264 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
AC/DC DIGITAL PLATFORM |
3,114 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO263-3-2 |
4,410 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 10A D2PAK |
3,672 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 600V | 480pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 15A D2PAK |
6,228 |
|
- | Schottky | 60V | 15A | 620mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 60V | 720pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 20A D2PAK |
3,888 |
|
- | Standard | 600V | 20A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO263AB |
6,498 |
|
- | Standard | 800V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A D2PAK |
7,920 |
|
- | Standard | 1200V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 15A D2PAK |
6,642 |
|
FRED Pt® | Standard | 200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 10µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 3A L-FLAT |
8,532 |
|
- | Standard | 200V | 3A (DC) | 0.98V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 3A L-FLAT |
7,668 |
|
- | Standard | 200V | 3A (DC) | 0.98V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 300V 3A L-FLAT |
6,840 |
|
- | Standard | 300V | 3A (DC) | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 300V 3A L-FLAT |
4,986 |
|
- | Standard | 300V | 3A (DC) | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 3A L-FLAT |
2,070 |
|
- | Standard | 400V | 3A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | - | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | - |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 3A L-FLAT |
4,194 |
|
- | Standard | 400V | 3A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | - | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | - |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 5A L-FLAT |
2,772 |
|
- | Standard | 200V | 5A (DC) | 0.98V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 5A L-FLAT |
6,372 |
|
- | Standard | 200V | 5A (DC) | 0.98V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 5A L-FLAT |
4,752 |
|
- | Standard | 200V | 5A (DC) | 0.98V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 300V 5A L-FLAT |
6,354 |
|
- | Standard | 300V | 5A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | - | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | - |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 300V 5A L-FLAT |
6,210 |
|
- | Standard | 300V | 5A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | - | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | - |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 5A L-FLAT |
7,020 |
|
- | Standard | 400V | 5A (DC) | 1.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 5A L-FLAT |
4,770 |
|
- | Standard | 400V | 5A (DC) | 1.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 10A L-FLAT |
3,454 |
|
- | Schottky | 30V | 10A (DC) | 0.47V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 530pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |