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數百萬庫存的電子零件。 接受缺貨訂單。 24小時內的價格和交貨時間報價。

整流器-單

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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 1078/1165
圖片
型號
制造商
描述
庫存
數量
系列
二極管類型
電壓-直流反向(Vr)(最大值)
電流-平均整流(Io)
電壓-正向(Vf)(最大值)@如果
速度
反向恢復時間(trr)
當前-反向泄漏@ Vr
電容@ Vr,F
安裝類型
包裝/箱
供應商設備包裝
工作溫度-結點
SS34LHRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A SUB SMA
5,688
Automotive, AEC-Q101
Schottky
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS36LHRUG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SUB SMA
3,708
Automotive, AEC-Q101
Schottky
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS36LHRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SUB SMA
5,598
Automotive, AEC-Q101
Schottky
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
TSOD1F10HM RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A SOD123FL
2,160
-
Standard
-
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
4pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
TSOD1F1HM RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SOD123FL
8,586
-
Standard
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
TSOD1F2HM RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SOD123FL
2,412
-
Standard
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
TSOD1F4HM RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SOD123FL
7,650
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
TSOD1F6HM RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SOD123FL
3,006
-
Standard
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
TSOD1F8HM RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SOD123FL
2,322
-
Standard
800V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
4pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
1N4002GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
6,390
Automotive, AEC-Q101
Standard
100V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4003G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
7,614
-
Standard
200V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4003GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
2,520
Automotive, AEC-Q101
Standard
200V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4006G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
2,808
-
Standard
800V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4006GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
8,478
Automotive, AEC-Q101
Standard
800V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4933G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
3,150
-
Standard
50V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 50V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4933GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
6,012
Automotive, AEC-Q101
Standard
50V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 50V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4934G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
7,632
-
Standard
100V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 100V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4934GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
5,976
Automotive, AEC-Q101
Standard
100V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 100V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4935G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
6,246
-
Standard
200V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 200V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4935GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
6,372
Automotive, AEC-Q101
Standard
200V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 200V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4937GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
5,454
Automotive, AEC-Q101
Standard
600V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N5817HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A DO204AL
4,302
Automotive, AEC-Q101
Schottky
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
1N5818 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A DO204AL
8,172
-
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
1N5818HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A DO204AL
6,156
Automotive, AEC-Q101
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
55pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
BA157GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
4,572
Automotive, AEC-Q101
Standard
400V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
BA158G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
2,790
-
Standard
600V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
BAT42 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
8,730
-
Schottky
30V
200mA
650mV @ 50mA
Small Signal =< 200mA (Io), Any Speed
5ns
100nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
8,748
-
Schottky
30V
200mA
450mV @ 15mA
Small Signal =< 200mA (Io), Any Speed
5ns
100nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
FR101G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
2,250
-
Standard
50V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER101G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
4,194
-
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C