整流器-單

制造商

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系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

記錄 34,936

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型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
1N5820HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO201AD	6,138	Automotive, AEC-Q101	Schottky	20V	3A	475mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
1N5821 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO201AD	4,284	-	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
1N5821HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO201AD	4,554	Automotive, AEC-Q101	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
1N5822HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO201AD	2,196	Automotive, AEC-Q101	Schottky	40V	3A	525mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
1T1G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	8,280	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T2G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	6,390	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T4G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	5,310	-	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T6G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	7,398	-	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
2A01G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO204AC	5,724	-	Standard	50V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
2A01GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO204AC	4,644	Automotive, AEC-Q101	Standard	50V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
2A02GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO204AC	2,610	Automotive, AEC-Q101	Standard	100V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
2A03G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	2,574	-	Standard	200V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
2A03GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	8,046	Automotive, AEC-Q101	Standard	200V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
2A04GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC	5,814	Automotive, AEC-Q101	Standard	400V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
2A05GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	4,662	Automotive, AEC-Q101	Standard	600V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
2A06GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO204AC	5,724	Automotive, AEC-Q101	Standard	800V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
31DF6 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD	6,912	-	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 150°C
6A05GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A R-6	4,338	Automotive, AEC-Q101	Standard	50V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A100GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 6A R-6	6,282	Automotive, AEC-Q101	Standard	1000V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A10GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 6A R-6	6,552	Automotive, AEC-Q101	Standard	100V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A20GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6	7,578	Automotive, AEC-Q101	Standard	200V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
F1T1G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	6,624	-	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T1GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	4,806	Automotive, AEC-Q101	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T2G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	8,442	-	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T2GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	5,292	Automotive, AEC-Q101	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T3G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	2,700	-	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T3GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	7,308	Automotive, AEC-Q101	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T4G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	8,370	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T4GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	4,536	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T5G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	7,488	-	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C

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