整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 240/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 10A TO263AB |
3,422 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
|
|
|
ON Semiconductor |
650V 10A SIC SBD GEN1.5 |
7,902 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 13.5A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 424pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 800V 3A AXIAL |
2,502 |
|
- | Standard | 800V | 5A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | 92pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
|
|
|
Semtech |
DIODE GEN PURP 600V 5A AXIAL |
5,634 |
|
- | Standard | 600V | 5A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | 92pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
|
|
|
Semtech |
DIODE GEN PURP 1KV 5A AXIAL |
3,562 |
|
- | Standard | 1000V | 5A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | 92pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
|
|
|
Semtech |
DIODE GEN PURP 400V 3A AXIAL |
6,462 |
|
- | Standard | 400V | 5A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | 92pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
|
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 5A TO-252-2 |
6,858 |
|
- | Silicon Carbide Schottky | 1200V | 27A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 4µA @ 1200V | 359pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 1.2KV 10A TO220 |
19,176 |
|
- | Silicon Carbide Schottky | 1200V | 10A | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-220-2 | TO-220 [K] | - |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV TO252 |
3,204 |
|
- | Silicon Carbide Schottky | 1200V | - | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 612pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | - |
|
|
|
IXYS |
DIODE AVALANCHE 1600V 3.6A AXIAL |
19,044 |
|
- | Avalanche | 1600V | 3.6A | 1.25V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 2mA @ 1600V | - | Through Hole | Axial | Axial | -40°C ~ 180°C |
|
|
|
Littelfuse |
DIODE GEN PURP 1.2KV 75A TO247AC |
6,432 |
|
DUR | Standard | 1200V | 75A | 3.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 650µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC | -55°C ~ 150°C |
|
|
|
Littelfuse |
DIODE SCHOTTKY 1.2KV 33A TO252 |
8,460 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 33A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 582pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
|
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|
Littelfuse |
SCHOTTKY DIODE SIC 1200V 10A |
7,866 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 28A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 582pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2L | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
SIC SCHOTTKY RECTIFIER |
6,318 |
|
- | Silicon Carbide Schottky | 650V | 12A | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 650V | 750pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 150MA DO35 |
8,328 |
|
Military, MIL-PRF-19500/241 | Standard | 125V | 150mA | 920mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 30A SIC SBD GEN1.5 |
5,598 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 73A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 1280pF @ 1V, 100kHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK-3 (TO-263) | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 12A TO263AB |
4,970 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 12A (DC) | 1.55V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | 438pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODES AND RECTIFIERS |
4,218 |
|
Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 650V | 20A | 1.45V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 600V | 1250pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
13,272 |
|
Military, MIL-PRF-19500/429 | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
6,642 |
|
Military, MIL-PRF-19500/427 | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 50V 6A DO4 |
14,388 |
|
- | Standard | 50V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
4,914 |
|
- | Silicon Carbide Schottky | 650V | 20A (DC) | 1.5V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 1000pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 20A TO263AB |
1,150 |
|
- | Silicon Carbide Schottky | 650V | 20A | 1.55V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 730pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
5,304 |
|
Military, MIL-PRF-19500/359 | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 15A TO263AB |
7,485 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 15A (DC) | 1.55V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 550pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
8,616 |
|
Military, MIL-PRF-19500/429 | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 8A TO-252-2 |
7,218 |
|
- | Silicon Carbide Schottky | 1200V | 40A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 7µA @ 1200V | 545pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
13,542 |
|
Military, MIL-PRF-19500/429 | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | A-PAK | -65°C ~ 175°C |
|
|
|
Sanken |
DIODE SCHOTTKY 600V 20A TO220-2 |
8,532 |
|
- | Silicon Carbide Schottky | 600V | 20A | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 15mA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F | -40°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 10A TO-252-2 |
8,676 |
|
- | Silicon Carbide Schottky | 1200V | 50A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 660pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |