整流器-單

制造商

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系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

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型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
TSS0230U RGG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 35V 200MA 0603	4,374	-	Schottky	35V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	18pF @ 1V, 1MHz	Surface Mount	0201 (0603 Metric)	0603	-40°C ~ 125°C
CTS05F40,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 500MA CST2	6,084	-	Schottky	40V	500mA	810mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	15µA @ 40V	28pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2	150°C (Max)
BAT81S-TAP	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 30MA DO35	3,400	Automotive, AEC-Q101	Schottky	40V	30mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 40V	1.6pF @ 1V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	125°C (Max)
BAV19W-HE3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 250MA SOD123	4,212	Automotive, AEC-Q101	Standard	100V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 100V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C (Max)
BAV21W-HE3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 250MA SOD123	8,766	Automotive, AEC-Q101	Standard	200V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 150V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	175°C (Max)
BAV19W-HE3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 250MA SOD123	4,068	Automotive, AEC-Q101	Standard	100V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 100V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C (Max)
1N4933G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	4,770	-	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4933GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	2,484	Automotive, AEC-Q101	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4934G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	8,802	-	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4934GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	8,568	Automotive, AEC-Q101	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4935G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	8,892	-	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4935GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	3,726	Automotive, AEC-Q101	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4936G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	8,262	-	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4937G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	7,002	-	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BA159G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	4,392	-	Standard	-	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BA159GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	4,788	Automotive, AEC-Q101	Standard	-	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR105G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	4,320	-	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR106G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	6,750	-	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR107G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	4,734	-	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1T1G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	3,366	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T2G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	5,562	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T3G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	8,820	-	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T4G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	2,574	-	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T5G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	7,200	-	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T6G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	5,022	-	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T7G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	5,454	-	Standard	-	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1N4001G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	7,884	-	Standard	50V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4002G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	4,860	-	Standard	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAS716F	Nexperia	DIODE GEN PURP 75V 200MA SOD523	3,492	-	Standard	75V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	3µs	5nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	150°C (Max)
BAS16-G	Comchip Technology	DIODE GEN PURP 75V 200MA SOT23	6,642	-	Standard	75V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	6ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-55°C ~ 150°C

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