整流器-單

制造商

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系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

記錄 34,936

頁面 328/1165

型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
S1ML RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A SUB SMA	6,030	-	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
RS1ML RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800MA SUB SMA	2,160	-	Standard	-	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1KL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	3,762	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1ML RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A SUB SMA	4,050	-	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1ML RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A SUB SMA	3,222	-	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
1N5399G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1.5A DO204AC	5,040	-	Standard	-	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
GPP10A-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL	7,488	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
GPP10B-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL	5,130	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
GPP10G-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL	7,830	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
GPP10J-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL	8,748	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
GPP10M-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL	2,718	-	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SB120E-G	Comchip Technology	DIODE SCHOTTKY 20V 1A DO41	5,562	-	Schottky	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
CD1408-R1600	Bourns	DIODE GEN PURP 600V 1A 1408	8,622	-	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	1µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	Chip, Concave Terminals	1408	-65°C ~ 175°C
CD214A-R1100	Bourns	DIODE GEN PURP 100V 1A DO214AC	5,130	-	Standard	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 175°C
CD214A-R1200	Bourns	DIODE GEN PURP 200V 1A DO214AC	4,968	-	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 175°C
CD214A-R1400	Bourns	DIODE GEN PURP 400V 1A DO214AC	8,316	-	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 175°C
CD214A-R150	Bourns	DIODE GEN PURP 50V 1A DO214AC	2,574	-	Standard	50V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 175°C
CD214A-R1600	Bourns	DIODE GEN PURP 600V 1A DO214AC	3,528	-	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 175°C
1N4448HWS-13-F	Diodes Incorporated	DIODE GEN PURP 80V 250MA SOD323	7,920	-	Standard	80V	250mA	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 80V	3.5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	-	-65°C ~ 150°C
BAS382-TR3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 30MA MICROMLF	4,122	Automotive, AEC-Q101	Schottky	50V	30mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 50V	1.6pF @ 1V, 1MHz	Surface Mount	2-SMD, No Lead	MicroMELF	125°C (Max)
BAS85-M-18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 200MA SOD80	7,704	Automotive, AEC-Q101	Schottky	30V	200mA	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	125°C (Max)
LS101A-GS18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 30MA SOD80	4,464	Automotive, AEC-Q101	Schottky	60V	30mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	125°C (Max)
BAS85-M-08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 200MA SOD80	4,320	Automotive, AEC-Q101	Schottky	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	125°C (Max)
LS101A-GS08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 30MA SOD80	8,946	Automotive, AEC-Q101	Schottky	60V	30mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	125°C (Max)
SD101BW-E3-18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 400MW 50V SOD123	8,676	Automotive, AEC-Q101	Schottky	50V	30mA (DC)	950mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 40V	2.1pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
SD101CW-E3-18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 30MA SOD123	2,358	Automotive, AEC-Q101	Schottky	50V	30mA (DC)	950mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 40V	2.1pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
PMEG3010AESAYL	Nexperia	DIODE SCHOTTKY 30V 1A DSN1006U-2	6,084	-	Schottky	30V	1A	480mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	3.5ns	1.25mA @ 30V	32pF @ 10V, 1MHz	Surface Mount	2-XDFN	DSN1006U-2	150°C (Max)
RS1A M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	2,790	-	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1AHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	7,920	Automotive, AEC-Q101	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1B M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	7,938	-	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C

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