整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 376/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向(Vr)(最大值) | 電流-平均整流(Io) | 電壓-正向(Vf)(最大值)@如果 | 速度 | 反向恢復時間(trr) | 當前-反向泄漏@ Vr | 電容@ Vr,F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO219AB |
6,066 |
|
Automotive, AEC-Q101 | Standard | 200V | 1A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 780ns | 5µA @ 200V | 7.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO219AB |
2,988 |
|
Automotive, AEC-Q101 | Standard | 400V | 1A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 780ns | 5µA @ 400V | 7.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO219AB |
3,330 |
|
Automotive, AEC-Q101 | Standard | 600V | 1A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 780ns | 5µA @ 600V | 7.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
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Micro Commercial Co |
DIODE SCHOTTKY 40V 2A DO41 |
6,858 |
|
- | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -50°C ~ 125°C |
|
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Micro Commercial Co |
DIODE SCHOTTKY 80V 2A DO41 |
4,500 |
|
- | Schottky | 80V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 80V | 170pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -50°C ~ 125°C |
|
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Diodes Incorporated |
DIODE SBR 40V 3A SMA |
2,934 |
|
SBR® | Super Barrier | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
3,834 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 100V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
3,438 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
8,910 |
|
SUPERECTIFIER® | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 800V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
8,370 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 160°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
6,966 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 160°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
2,664 |
|
SUPERECTIFIER® | Standard | 800V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 160°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
2,142 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 160°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
2,664 |
|
- | Standard | 100V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | - |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
6,012 |
|
- | Standard | 200V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | - |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
2,448 |
|
- | Standard | 600V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | - |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
3,366 |
|
- | Standard | 800V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | - |
|
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ON Semiconductor |
DIODE SCHOTTKY 20V 500MA SOD923 |
3,564 |
|
- | Schottky | 20V | 500mA (DC) | 520mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 9µA @ 20V | - | - | - | - | -55°C ~ 125°C |
|
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ON Semiconductor |
DIODE SCHOTTKY 30V 600MA SOD923 |
4,266 |
|
- | Schottky | 30V | 600mA (DC) | 620mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | - | - | - | -55°C ~ 125°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1.5A DO214AC |
8,568 |
|
- | Standard | 200V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1.5A DO214AC |
7,542 |
|
- | Standard | 400V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 400V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.5A DO214AC |
5,202 |
|
- | Standard | 600V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 600V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 2A DO214AC |
6,750 |
|
- | Schottky | 20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 2A DO214AC |
4,572 |
|
- | Schottky | 30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 2A DO214AC |
3,906 |
|
- | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 2A DO214AC |
3,744 |
|
- | Schottky | 50V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 2A DO214AC |
8,838 |
|
- | Schottky | 60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 1A SUB SMA |
2,988 |
|
Automotive, AEC-Q101 | Schottky | 100V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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Comchip Technology |
DIODE GEN PURP 50V 3A DO201AD |
3,258 |
|
- | Standard | 50V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-27 (DO-201AD) | -65°C ~ 125°C |
|
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Comchip Technology |
DIODE GEN PURP 200V 3A DO201AD |
3,564 |
|
- | Standard | 200V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-27 (DO-201AD) | -65°C ~ 125°C |