整流器-單

制造商

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系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

記錄 34,936

頁面 389/1165

型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
SE20FG-M3/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.7A DO219AB	5,706	-	Standard	400V	1.7A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	920ns	5µA @ 400V	13pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
SE20FG-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.7A DO219AB	4,068	-	Standard	400V	1.7A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	920ns	5µA @ 400V	13pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
SE20FJ-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1.7A DO219AB	7,506	-	Standard	600V	1.7A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	920ns	5µA @ 600V	13pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
HER205G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC	4,536	-	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
HER206G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	3,816	-	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
ES1BHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	8,946	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1CHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AC	6,696	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1DHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	8,046	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1FHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO214AC	2,430	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SRT110HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A TS-1	7,614	Automotive, AEC-Q101	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS215L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 2A SUB SMA	5,400	-	Schottky	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HER204G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO204AC	8,406	-	Standard	300V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
CDBB140-G	Comchip Technology	DIODE SCHOTTKY 40V 1A DO214AA	6,156	-	Schottky	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	125°C (Max)
CDBB160-G	Comchip Technology	DIODE SCHOTTKY 60V 1A DO214AA	5,220	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	125°C (Max)
S07M-M-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 700MA DO219AB	6,966	Automotive, AEC-Q101	Standard	1000V	700mA	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
SBRT05U20S3Q-7	Diodes Incorporated	DIODE SBR 20V 500MA SOD323	7,308	Automotive, AEC-Q101	Super Barrier	20V	500mA	400mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	70µA @ 20V	-	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
S1AB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AA	8,136	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1BB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AA	6,912	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1DB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AA	2,322	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1DBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AA	8,154	Automotive, AEC-Q101	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1GB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AA	6,534	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1GBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AA	4,428	Automotive, AEC-Q101	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1JB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AA	3,654	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1JBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AA	3,456	Automotive, AEC-Q101	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1KB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AA	2,232	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1KBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AA	6,858	Automotive, AEC-Q101	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1MB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AA	8,100	-	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1MBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AA	8,694	Automotive, AEC-Q101	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2KHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA	7,632	Automotive, AEC-Q101	Standard	800V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2MHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 2A DO214AA	3,418	Automotive, AEC-Q101	Standard	-	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C

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