整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 386/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1.5A DO214AC |
2,484 |
|
- | Standard | 100V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1.5A DO214AC |
4,482 |
|
- | Standard | 200V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1.5A DO219AB |
3,600 |
|
Automotive, AEC-Q101 | Standard | 200V | 1.5A | 1.05V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 900ns | 5µA @ 200V | 10.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1.5A DO219AB |
4,788 |
|
Automotive, AEC-Q101 | Standard | 200V | 1.5A | 1.05V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 900ns | 5µA @ 200V | 10.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A DO219AB |
8,640 |
|
Automotive, AEC-Q101 | Standard | 400V | 1.5A | 1.05V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 900ns | 5µA @ 400V | 10.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A DO219AB |
3,924 |
|
Automotive, AEC-Q101 | Standard | 400V | 1.5A | 1.05V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 900ns | 5µA @ 400V | 10.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.5A DO219AB |
2,106 |
|
Automotive, AEC-Q101 | Standard | 600V | 1.5A | 1.05V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 900ns | 5µA @ 600V | 10.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.5A DO219AB |
8,856 |
|
Automotive, AEC-Q101 | Standard | 600V | 1.5A | 1.05V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 900ns | 5µA @ 600V | 10.5pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
7,560 |
|
eSMP® | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 100V | 6pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO220AA |
2,106 |
|
eSMP® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 200V | 6pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO220AA |
7,416 |
|
eSMP® | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 1000V | 6pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 1A TS-1 |
8,334 |
|
- | Standard | 500V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A TS-1 |
6,408 |
|
- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A MPG06 |
4,878 |
|
Automotive, AEC-Q101 | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
|
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|
Diodes Incorporated |
DIODE SCHOTTKY 40V 1A UDFN16082 |
8,208 |
|
Automotive, AEC-Q101 | Schottky | 40V | 1A | 660mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 8.4ns | 20µA @ 40V | 25pF @ 5V, 1MHz | Surface Mount | 2-UFDFN | U-DFN1608-2 | -65°C ~ 150°C |
|
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|
ON Semiconductor |
DIODE SCHOTTKY 60V 3A 8WDFN |
8,694 |
|
Automotive, AEC-Q101 | Schottky | 60V | 3A | 900mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 12µA @ 60V | - | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | -65°C ~ 175°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 2A SUB SMA |
7,902 |
|
- | Schottky | 100V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 2A SUB SMA |
4,500 |
|
- | Schottky | 90V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 2A SMA |
4,374 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Diodes Incorporated |
DIODE SCHOTTKY 100V 2A SMAF |
7,722 |
|
- | Schottky | 100V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | 93pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMAF | -55°C ~ 150°C |
|
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|
Comchip Technology |
DIODE SCHOTTKY 60V 1A MINISMA |
5,976 |
|
- | Schottky | 60V | 1A (DC) | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 120pF @ 4V, 1MHz | Surface Mount | SOD-123T | Mini SMA/SOD-123 | -50°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 1A TS-1 |
8,370 |
|
Automotive, AEC-Q101 | Standard | 300V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A TS-1 |
5,022 |
|
Automotive, AEC-Q101 | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 1A TS-1 |
6,264 |
|
Automotive, AEC-Q101 | Standard | 300V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A TS-1 |
6,174 |
|
Automotive, AEC-Q101 | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 1A TS-1 |
7,362 |
|
Automotive, AEC-Q101 | Standard | 500V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A TS-1 |
5,616 |
|
Automotive, AEC-Q101 | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 100V 700MA SFLAT |
7,992 |
|
- | Standard | 100V | 700mA | 1.1V @ 700mA | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
|
|
|
Panasonic Electronic Components |
DIODE SCHOTTKY 60V 500MA MINI3 |
5,112 |
|
- | Schottky | 60V | 500mA | 650mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5ns | 100µA @ 50V | 14pF @ 10V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Mini3-G3-B | 125°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE GEN PURP 600V 200MA TUMD2S |
6,246 |
|
- | Standard | 600V | 200mA | 1.1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 600V | - | Surface Mount | 2-SMD, Flat Lead | TUMD2S | 150°C (Max) |