整流器-單

制造商

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系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

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型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
VS-2EMH02-M3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A SMA	2,520	FRED Pt®	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 200V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 175°C
HS1DDF-13	Diodes Incorporated	SUPERFAST RECOVERY RECTIFIER D-F	8,712	-	Standard	200V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	D-Flat	-55°C ~ 150°C
GL41A/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO213AB	2,268	SUPERECTIFIER®	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
GL41D/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO213AB	3,384	SUPERECTIFIER®	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
GL41M/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO213AB	7,092	SUPERECTIFIER®	Standard	1000V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
1N6478-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO213AB	3,582	SUPERECTIFIER®	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
1N6479-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO213AB	3,598	SUPERECTIFIER®	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
1N6480-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO213AB	5,922	SUPERECTIFIER®	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
1N6481-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO213AB	5,778	SUPERECTIFIER®	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
1N6482-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO213AB	8,136	SUPERECTIFIER®	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
1N6483-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO213AB	3,420	SUPERECTIFIER®	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
1N6484-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO213AB	7,146	SUPERECTIFIER®	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
GL41B-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO213AB	3,402	SUPERECTIFIER®	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
GL41D-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO213AB	4,140	SUPERECTIFIER®	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
GL41G-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO213AB	4,662	SUPERECTIFIER®	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
GL41J-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO213AB	8,244	SUPERECTIFIER®	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
GL41K-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO213AB	7,722	SUPERECTIFIER®	Standard	800V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
GL41T-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.3KV 1A DO213AB	7,218	SUPERECTIFIER®	Standard	1300V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1300V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
MUR105S R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AA	2,502	-	Standard	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR110S R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AA	7,992	-	Standard	100V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR115S R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AA	3,454	-	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR140S R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AA	4,536	-	Standard	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	150µA @ 400V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
SB360TA	SMC Diode Solutions	DIODE SCHOTTKY 60V 3A DO201AD	7,632	-	Schottky	60V	3A	740mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	250pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
ES2LD M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	2,124	-	Standard	200V	2A	940mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2LG M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA	5,634	-	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2LJ M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA	5,958	-	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3AB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AA	4,644	-	Standard	50V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3ABHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AA	2,844	Automotive, AEC-Q101	Standard	50V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3BB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AA	7,866	-	Standard	100V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3BBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AA	3,384	Automotive, AEC-Q101	Standard	100V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C

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