內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 1544/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microchip Technology |
2KB I2C EEPROM 1MHZ 1.7-5.5V 8-P |
6,192 |
|
- | Non-Volatile | EEPROM | EEPROM | 2Kb (256 x 8) | I²C | 1MHz | 5ms | 450ns | 1.7V ~ 5.5V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
4KB I2C EEPROM 1MHZ 1.7-5.5V 8-P |
7,470 |
|
- | Non-Volatile | EEPROM | EEPROM | 4Kb (256 x 8 x 2) | I²C | 1MHz | 5ms | 450ns | 1.7V ~ 5.5V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
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|
Toshiba Memory America, Inc. |
IC FLASH 64G EMMC 153-FBGA |
9,331 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | 153-FBGA (11.5x13) |
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|
Toshiba Memory America, Inc. |
IC FLASH 128G MMC 153FBGA |
45,182 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | 153-FBGA (11.5x13) |
|
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|
Toshiba Memory America, Inc. |
IC FLASH 256G MMC 153FBGA |
4,590 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | 153-FBGA (11.5x13) |
|
|
|
Toshiba Memory America, Inc. |
IC FLASH 512G MMC 153FBGA |
7,200 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | 153-VFBGA (11.5x13) |
|
|
|
Toshiba Memory America, Inc. |
IC FLASH MEM MMC 153FBGA |
6,732 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | 153-TFBGA (11.5x13) |
|
|
|
Toshiba Memory America, Inc. |
IC FLASH MEM MMC 153FBGA |
6,678 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Memory America, Inc. |
IC FLASH MEM MMC 153FBGA |
3,438 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | 153-WFBGA (11.5x13) |
|
|
|
Toshiba Memory America, Inc. |
IC FLASH MEM MMC 153FBGA |
4,410 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Memory America, Inc. |
IC FLASH MEM MMC 153FBGA |
8,046 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | 169-VFBGA (11.5x13) |
|
|
|
Toshiba Memory America, Inc. |
IC FLASH MEM MMC 153FBGA |
5,526 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | 169-VFBGA (11.5x13) |
|
|
|
Toshiba Memory America, Inc. |
IC FLASH MEM MMC 153FBGA |
3,834 |
|
- | - | - | - | - | - | - | - | - | - | - | Surface Mount | - | 153-TFBGA (11.5x13) |
|
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|
Rohm Semiconductor |
IC EEPROM 32KB SOP-J8 |
7,218 |
|
- | Non-Volatile | EEPROM | EEPROM | 32Kb (4K x 8) | SPI | 20MHz | 5ms | - | 1.6V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP-J |
|
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|
Rohm Semiconductor |
IC EEPROM 1K MICRO BUS SOP-J8 |
5,706 |
|
- | Non-Volatile | EEPROM | EEPROM | 1Kb (64 x 16) | SPI | 3MHz | 5ms | - | 1.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP-J |
|
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|
Rohm Semiconductor |
IC EEPROM 256K I2C 8DIP |
6,930 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | I²C | 400kHz | 5ms | - | 1.6V ~ 5.5V | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP-T |
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Renesas Electronics America |
MICROCOMPUTER |
4,968 |
|
- | Volatile | SRAM | SRAM | 4Mb (512K x 8) | Parallel | - | 10ns | 10ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 36-BSOJ (0.400", 10.16mm Width) | 36-SOJ |
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Renesas Electronics America |
MICROCOMPUTER |
2,088 |
|
- | Volatile | SRAM | SRAM | 4Mb (512K x 8) | Parallel | - | 10ns | 10ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 36-BSOJ (0.400", 10.16mm Width) | 36-SOJ |
|
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|
Cypress Semiconductor |
IC FLASH 32MBIT 104MHZ 24BGA |
8,064 |
|
FL-P | Non-Volatile | FLASH | FLASH - NOR | 32Mb (4M x 8) | SPI - Quad I/O | 104MHz | 5µs, 3ms | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-BGA (6x8) |
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Cypress Semiconductor |
IC FLASH 1GBIT 110NS 56TSOP |
2,520 |
|
GL-P | Non-Volatile | FLASH | FLASH - NOR | 1Gb (128M x 8) | Parallel | - | 110ns | 110ns | 3V ~ 3.6V | 0°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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Cypress Semiconductor |
IC FLASH 512MBIT 100NS 56TSOP |
5,022 |
|
GL-P | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 100ns | 100ns | 3V ~ 3.6V | 0°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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Cypress Semiconductor |
IC FRAM 16K I2C 1MHZ 8SOIC |
4,824 |
|
F-RAM™ | Non-Volatile | FRAM | FRAM (Ferroelectric RAM) | 64Kb (8K x 8) | Parallel | - | 130ns | - | 2.7V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Cypress Semiconductor |
IC FRAM 4K SPI 20MHZ 8SOIC |
3,762 |
|
F-RAM™ | Non-Volatile | FRAM | FRAM (Ferroelectric RAM) | 64Kb (8K x 8) | Parallel | - | 130ns | - | 2.7V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Cypress Semiconductor |
IC FRAM 64K PARALLEL 28SOIC |
8,154 |
|
F-RAM™ | Non-Volatile | FRAM | FRAM (Ferroelectric RAM) | 16Kb (2K x 8) | I²C | 1MHz | - | 550ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Cypress Semiconductor |
IC FRAM 64K PARALLEL 28SOIC |
6,300 |
|
F-RAM™ | Non-Volatile | FRAM | FRAM (Ferroelectric RAM) | 4Kb (512 x 8) | SPI | 20MHz | - | - | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Cypress Semiconductor |
IC FRAM 16K SPI 20MHZ 8SOIC |
8,658 |
|
F-RAM™ | Non-Volatile | FRAM | FRAM (Ferroelectric RAM) | 16Kb (2K x 8) | SPI | 20MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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Micron Technology Inc. |
IC DRAM 4G PARALLEL 78FBGA |
5,922 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 4Gb (512M x 8) | Parallel | 1.6GHz | - | 13.75ns | 1.14V ~ 1.26V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (7.5x11) |
|
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|
Micron Technology Inc. |
IC DRAM 4G PARALLEL 96FBGA |
6,120 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.6GHz | - | 13.75ns | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (7.5x13.5) |
|
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|
Micron Technology Inc. |
IC DRAM 4G PARALLEL 78FBGA |
2,484 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 4Gb (512M x 8) | Parallel | 1.6GHz | - | 13.75ns | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (7.5x11) |
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Cypress Semiconductor |
IC FLASH MEMORY |
2,016 |
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