內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 204/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Alliance Memory, Inc. |
8M PSRAM 48 BGA 3V |
6,636 |
|
- | Volatile | PSRAM | PSRAM (Pseudo SRAM) | 8Mb (512K x 16) | Parallel | - | 70ns | 70ns | 2.6V ~ 3.3V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-FBGA (6x7) |
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Alliance Memory, Inc. |
256K LP SRAM 32KX8 4.5-5.5V 28PI |
41,322 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 55ns | 55ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 64M SPI 133MHZ 16SOIC |
7,038 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 64Mb (8M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 800µs | - | 1.65V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Alliance Memory, Inc. |
IC DRAM 128M PARALLEL 66TSOP II |
6,540 |
|
- | Volatile | DRAM | SDRAM - DDR | 128Mb (8M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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Cypress Semiconductor |
IC FLASH 64M SPI 108MHZ 8USON |
9,156 |
|
FL-L | Non-Volatile | FLASH | FLASH - NOR | 64Mb (8M x 8) | SPI - Quad I/O, QPI | 108MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-UDFN Exposed Pad | 8-USON (4x4) |
|
|
|
Winbond Electronics |
IC DRAM 512M PARALLEL 60WBGA |
8,748 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (64M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Surface Mount | 60-TFBGA | 60-WBGA (8x12.5) |
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|
Winbond Electronics |
IC SDRAM 1GBIT 667MHZ 96BGA |
6,696 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (64M x 16) | Parallel | 667MHz | - | 20ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 96-VFBGA | 96-VFBGA (7.5x13) |
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Toshiba Memory America, Inc. |
IC FLASH 1G PARALLEL 48TSOP I |
315,458 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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|
Microchip Technology |
IC FLASH 16M PARALLEL 48TSOP |
18,387 |
|
SST39 MPF™ | Non-Volatile | FLASH | FLASH | 16Mb (1M x 16) | Parallel | - | 10µs | 70ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
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|
Microchip Technology |
IC EEPROM 1M I2C 400KHZ 8SOIJ |
6,204 |
|
- | Non-Volatile | EEPROM | EEPROM | 1Mb (128K x 8) | I²C | 400kHz | 5ms | 900ns | 2.5V ~ 5.5V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIJ |
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Toshiba Memory America, Inc. |
IC FLASH 2G PARALLEL 48TSOP I |
280,292 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Macronix |
SERIAL NOR |
7,974 |
|
MXSMIO™ | Non-Volatile | FLASH | FLASH - NOR | 256Mb (32M x 8) | SPI | 120MHz | 30µs, 750µs | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x5) |
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Toshiba Memory America, Inc. |
IC FLASH 2G PARALLEL 48TSOP I |
75,365 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Alliance Memory, Inc. |
IC DRAM 512M PARALLEL 96FBGA |
6,948 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 512Mb (32M x 16) | Parallel | 800MHz | - | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 96-VFBGA | 96-FBGA (8x13) |
|
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Alliance Memory, Inc. |
IC DRAM 256M PARALLEL 54TSOP |
7,668 |
|
- | Volatile | DRAM | SDRAM | 256Mb (32M x 8) | Parallel | 166MHz | - | 5.5ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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Toshiba Memory America, Inc. |
IC FLASH 4G PARALLEL 67VFBGA |
6,396 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 67-VFBGA | 67-VFBGA (6.5x8) |
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Toshiba Memory America, Inc. |
IC FLASH 4G PARALLEL 48TSOP I |
8,154 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Toshiba Memory America, Inc. |
IC FLASH 4G PARALLEL 48TSOP I |
4,752 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Toshiba Memory America, Inc. |
2G NAND SLC 24NM BGA |
6,180 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | - | - | 25ns | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
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Toshiba Memory America, Inc. |
IC FLASH 4G PARALLEL 48TSOP I |
8,766 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Cypress Semiconductor |
IC FLASH 128M PARALLEL 64BGA |
8,352 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 128Mb (8M x 16) | Parallel | - | 60ns | 90ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
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Microchip Technology |
IC EPROM 2M PARALLEL 44PLCC |
6,894 |
|
- | Non-Volatile | EPROM | EPROM - OTP | 2Mb (128K x 16) | Parallel | - | - | 55ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 44-LCC (J-Lead) | 44-PLCC (16.6x16.6) |
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Winbond Electronics |
IC DRAM 512M PARALLEL 134VFBGA |
4,428 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 512Mb (16M x 32) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 134-VFBGA | 134-VFBGA (10x11.5) |
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Microchip Technology |
IC FLASH 64M PARALLEL 48TSOP |
8,892 |
|
SST38 | Non-Volatile | FLASH | FLASH | 64Mb (4M x 16) | Parallel | - | 10µs | 70ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
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Winbond Electronics |
IC FLASH 512M SPI 104MHZ 16SOIC |
6,156 |
|
SpiFlash® | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI | 104MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Winbond Electronics |
IC DRAM 1G PARALLEL 134VFBGA |
6,660 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 1Gb (64M x 16) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 134-VFBGA | 134-VFBGA (10x11.5) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 2G PARALLEL 48TSOP |
7,938 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | Parallel | - | 45ns | 45ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
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Microchip Technology |
IC EEPROM 64K PARALLEL 28SOIC |
5,688 |
|
- | Non-Volatile | EEPROM | EEPROM | 64Kb (8K x 8) | Parallel | - | 10ms | 90ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
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Alliance Memory, Inc. |
IC DRAM 512M PARALLEL 90FBGA |
6,912 |
|
- | Volatile | DRAM | SDRAM - Mobile SDRAM | 512Mb (16M x 32) | Parallel | 166MHz | 15ns | 5.4ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-VFBGA | 90-FBGA (8x13) |
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Alliance Memory, Inc. |
IC DRAM 1G PARALLEL 78FBGA |
7,164 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (128M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 78-VFBGA | 78-FBGA (8x10.5) |