內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 205/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Alliance Memory, Inc. |
IC DRAM 1G PARALLEL 78FBGA |
6,612 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 1Gb (128M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 78-VFBGA | 78-FBGA (8x10.5) |
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|
Cypress Semiconductor |
IC NVSRAM 64K SPI 40MHZ 8SOIC |
4,950 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 64Kb (8K x 8) | SPI | 40MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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|
Alliance Memory, Inc. |
IC DRAM 2G 64MX32 LPDDR2 134BGA |
2,100 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 2Gb (64M x 32) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 134-VFBGA | 134-FBGA (10x11.5) |
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|
Alliance Memory, Inc. |
IC DRAM 256M PARALLEL 90TFBGA |
6,210 |
|
- | Volatile | DRAM | SDRAM | 256Mb (8M x 32) | Parallel | 166MHz | 2ns | 5ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 4G PARALLEL 48TSOP |
8,784 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 45ns | 45ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
|
|
|
ISSI, Integrated Silicon Solution Inc |
4G DDR4 256MX16 BGA(96) |
5,760 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.2GHz | 15ns | - | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 96-BGA | 96-BGA |
|
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|
Insignis Technology Corporation |
EMMC 4GBIT BGA IT |
8,244 |
|
- | Non-Volatile | FLASH | FLASH - NAND (MLC) | 4Gb (512M x 8) | eMMC | 200MHz | - | - | 3.3V | -40°C ~ 85°C | Surface Mount | 153-VFBGA | 153-FBGA (11.5x13) |
|
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|
Toshiba Memory America, Inc. |
8GB SLC BENAND TSOP 24NM 4K PAGE |
6,144 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 8Gb (1G x 8) | - | - | 25ns | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
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|
Alliance Memory, Inc. |
IC DRAM 4G PARALLEL 134FBGA |
5,616 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 4Gb (128M x 32) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 134-VFBGA | 134-FBGA (10x11.5) |
|
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|
ISSI, Integrated Silicon Solution Inc |
4G DDR4 256MX16 BGA(96) |
7,218 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.2GHz | 15ns | - | 1.14V ~ 1.26V | -40°C ~ 95°C (TC) | Surface Mount | 96-BGA | 96-BGA |
|
|
|
Toshiba Memory America, Inc. |
16GB V5.1 EMMC |
97 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 128Gb (16G x 8) | eMMC | - | - | - | - | -25°C ~ 85°C (TA) | Surface Mount | 153-WFBGA | 153-FBGA (11.5x13) |
|
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|
Cypress Semiconductor |
IC SRAM 8M PARALLEL 44TSOP II |
6,432 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 55ns | 55ns | 2.2V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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|
Cypress Semiconductor |
IC FLASH 1G SPI 133MHZ 16SO |
6,192 |
|
FL-S | Non-Volatile | FLASH | FLASH - NOR | 1Gb (128M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
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|
Alliance Memory, Inc. |
IC DRAM 512M PARALLEL 54TSOP |
7,362 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 166MHz | 12ns | 5ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
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Alliance Memory, Inc. |
512M - C DIE NEW - SINGLE DIE 32 |
6,144 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 133MHz | 15ns | 17ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
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|
Alliance Memory, Inc. |
512M - C DIE NEW 16M X 32 3.3V 1 |
6,426 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | 15ns | 17ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
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Maxim Integrated |
IC NVSRAM 64K PARALLEL 28EDIP |
6,318 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 64Kb (8K x 8) | Parallel | - | 70ns | 70ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole | 28-DIP Module (0.600", 15.24mm) | 28-EDIP |
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|
Swissbit |
IC FLASH 64GBIT EMMC 153LFBGA |
5,400 |
|
EM-26 | Non-Volatile | FLASH | FLASH - NAND (pSLC) | 64Gb (8G x 8) | eMMC | 400MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C | Surface Mount | 153-LFBGA | 153-LFBGA (11.5x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 8G PARALLEL 96FBGA |
5,832 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 8Gb (512M x 16) | Parallel | 800MHz | - | 20ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (10x14) |
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Cypress Semiconductor |
IC SRAM 18M PARALLEL 100TQFP |
2 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (1M x 18) | Parallel | 200MHz | - | 3ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Cypress Semiconductor |
IC SRAM 18M PARALLEL 100TQFP |
8,982 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (1M x 18) | Parallel | 200MHz | - | 3ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Cypress Semiconductor |
IC SRAM 18M PARALLEL 100TQFP |
7,416 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (1M x 18) | Parallel | 133MHz | - | 6.5ns | 3.135V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Cypress Semiconductor |
IC SRAM 18M PARALLEL 100TQFP |
8,496 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (512K x 36) | Parallel | 167MHz | - | 3.4ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Cypress Semiconductor |
IC SRAM 18M PARALLEL 100TQFP |
8,028 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (512K x 36) | Parallel | 200MHz | - | 3ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
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Toshiba Memory America, Inc. |
32GB SLC NAND TSOP 32NM LB I-TEM |
7,025 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 32Gb (4G x 8) | Parallel | - | 25ns | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
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Microchip Technology |
IC EEPROM 1M PARALLEL 32PLCC |
7,650 |
|
- | Non-Volatile | EEPROM | EEPROM | 1Mb (128K x 8) | Parallel | - | 10ms | 150ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC (13.97x11.43) |
|
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Toshiba Memory America, Inc. |
128GB VER. 2.1 UFS UNIVERSAL FLA |
35 |
|
Consumer UFS | Non-Volatile | FLASH | FLASH - NAND | 1Tb (128G x 8) | UFS | - | - | - | 2.7V ~ 3.6V | -25°C ~ 85°C (TC) | Surface Mount | 153-VFBGA | 153-VFBGA (11.5x13) |
|
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|
Swissbit |
IC FLASH 256GBIT EMMC 153LFBGA |
5,976 |
|
EM-26 | Non-Volatile | FLASH | FLASH - NAND (pSLC) | 256Gb (32G x 8) | eMMC | 400MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C | Surface Mount | 153-LFBGA | 153-LFBGA (11.5x13) |
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Microchip Technology |
IC EEPROM 256K PARALLEL 28FLATPK |
8,046 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 90ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Surface Mount | 28-CFlatPack | 28-Flatpack, Ceramic Bottom-Brazed |
|
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Microchip Technology |
IC EEPROM 256K PARALLEL 28CDIP |
3,888 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 200ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TC) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CDIP |