內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 93/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microchip Technology |
IC EEPROM 256K PARALLEL 28TSOP |
6,876 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 150ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP |
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|
Alliance Memory, Inc. |
4G DDR3 256MX16 1.35V 96-BALL FB |
7,434 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 4Gb (256M x 16) | Parallel | 933MHz | 15ns | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x13.5) |
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Microchip Technology |
IC EEPROM 256K PARALLEL 28TSOP |
6,492 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 150ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP |
|
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|
Renesas Electronics America |
IC SRAM 8M PARALLEL 48TSOP |
14,976 |
|
- | Volatile | SRAM | SRAM | 8Mb (1M x 8, 512K x 16) | Parallel | - | 45ns | 45ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Renesas Electronics America |
IC SRAM 8M PARALLEL 48FBGA |
6,912 |
|
- | Volatile | SRAM | SRAM | 8Mb (512K x 16) | Parallel | - | 45ns | 45ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (7.5x8.5) |
|
|
|
Microchip Technology |
IC EEPROM 256K PARALLEL 28SOIC |
8,256 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 120ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
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|
Winbond Electronics |
IC DDR2 SDRAM 2GBIT 2.5NS 84BGA |
15,271 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (128M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Surface Mount | 84-TFBGA | 84-WBGA (8x12.5) |
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|
Cypress Semiconductor |
NAND |
14,484 |
|
Automotive, AEC-Q100, MS-2 | Non-Volatile | FLASH | FLASH - NAND | 4Gb (256M x 16) | Parallel | - | 45ns | 45ns | 1.7V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 32PLCC |
6,468 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 120ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC (13.97x11.43) |
|
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|
Micron Technology Inc. |
IC DRAM 2G PARALLEL 90VFBGA |
12,738 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 2Gb (64M x 32) | Parallel | 208MHz | 14.4ns | 5.0ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-VFBGA | 90-VFBGA (8x13) |
|
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|
Micron Technology Inc. |
IC DRAM 4G PARALLEL 78FBGA |
22,824 |
|
Automotive, AEC-Q100 | Volatile | DRAM | SDRAM - DDR3L | 4Gb (512M x 8) | Parallel | 933MHz | - | 20ns | 1.283V ~ 1.45V | -40°C ~ 105°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (8x10.5) |
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28SOIC |
6,132 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 90ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
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|
Alliance Memory, Inc. |
4G DDR3 256MX16 1.35V 96-BALL FB |
7,464 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 4Gb (256M x 16) | Parallel | 933MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x13.5) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC FLASH 4G PARALLEL 48TSOP |
8,172 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP |
|
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28TSOP |
16,926 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 90ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP |
|
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|
Micron Technology Inc. |
IC FLASH RAM 4G PARALLEL 533MHZ |
21,900 |
|
- | Non-Volatile | FLASH, RAM | FLASH - NAND, DRAM - LPDDR2 | 4Gb (128M x 32)(NAND), 4G (128M x 32)(LPDDR2) | Parallel | 533MHz | - | - | 1.8V | -40°C ~ 85°C (TA) | Surface Mount | 162-VFBGA | 162-VFBGA (10.5x8) |
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Microchip Technology |
IC EEPROM 256K PARALLEL 28SOIC |
13,866 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 90ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Alliance Memory, Inc. |
IC DRAM 4G PARALLEL 78FBGA |
7,284 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 4Gb (512M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 78-VFBGA | 78-FBGA (10.5x9) |
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Toshiba Memory America, Inc. |
8GB SLC NAND 24NM BGA 6.5X8 1.8V |
9,372 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 8Gb (1G x 8) | - | - | 25ns | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 67-VFBGA | 67-VFBGA (6.5x8) |
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Toshiba Memory America, Inc. |
8GB SLC NAND 24NM BGA 9X11 3.3V |
7,722 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 8Gb (1G x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28TSOP |
18,468 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 3ms | 90ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-TSSOP (0.465", 11.80mm Width) | 28-TSOP |
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Insignis Technology Corporation |
EMMC 4GB 100BALL IT |
6,816 |
|
- | Non-Volatile | FLASH | FLASH - NAND (MLC) | 32Gb (4G x 8) | eMMC | 200MHz | - | - | 3.3V | -40°C ~ 85°C | Surface Mount | 100-LBGA | 100-BGA (14x18) |
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Cypress Semiconductor |
IC FLASH 256M PARALLEL 84FBGA |
6,264 |
|
WS-P | Non-Volatile | FLASH | FLASH - NOR | 256Mb (16M x 16) | Parallel | 80MHz | 60ns | 80ns | 1.7V ~ 1.95V | -25°C ~ 85°C (TA) | Surface Mount | 84-VFBGA | 84-FBGA (11.6x8) |
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|
Cypress Semiconductor |
IC FLASH 256M PARALLEL 84FBGA |
8,028 |
|
WS-P | Non-Volatile | FLASH | FLASH - NOR | 256Mb (16M x 16) | Parallel | 66MHz | 60ns | 80ns | 1.7V ~ 1.95V | -25°C ~ 85°C (TA) | Surface Mount | 84-VFBGA | 84-FBGA (11.6x8) |
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Cypress Semiconductor |
IC FLASH 1G PARALLEL 64FBGA |
7,668 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 1Gb (64M x 16) | Parallel | - | 60ns | 120ns | 1.65V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Cypress Semiconductor |
IC FLASH 1G PARALLEL 64FBGA |
7,116 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 1Gb (64M x 16) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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|
Microchip Technology |
IC EEPROM 256K PARALLEL 28SOIC |
7,188 |
|
- | Non-Volatile | EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 10ms | 90ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
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Renesas Electronics America |
IC SRAM 16M PARALLEL 48FBGA |
1,243 |
|
- | Volatile | SRAM | SRAM | 16Mb (1M x 16) | Parallel | - | 55ns | 55ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (7.5x8.5) |
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Toshiba Memory America, Inc. |
8GB V5.1 I TEMP EMMC |
6,408 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | eMMC | - | - | - | - | -40°C ~ 105°C (TA) | Surface Mount | 153-WFBGA | 153-FBGA (11.5x13) |
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|
Cypress Semiconductor |
IC FLASH 1G PARALLEL 56TSOP |
9,636 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 1Gb (64M x 16) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |