內存IC
- 內存 (46,590)
- 內存-電池 (13)
- 內存-FPGA的配置命令 (578)
- 內存-控制器 (151)
圖片 |
型號 |
描述 |
庫存 |
數量 |
---|---|---|---|---|
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MT29F512G08CUCABH3-10R:A TR
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 100LBGA
|
庫存2,520 |
|
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MT29F512G08CUCABH3-10RZ:A
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 100MHZ
|
庫存6,372 |
|
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MT29F512G08CUCABH3-10RZ:A TR
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 100MHZ
|
庫存3,960 |
|
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MT29F512G08CUCABH3-10Z:A
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 100LBGA
|
庫存2,970 |
|
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MT29F512G08CUCABH3-10Z:A TR
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 100LBGA
|
庫存5,724 |
|
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MT29F512G08CUCABH3-12:A
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 100LBGA
|
庫存745 |
|
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MT29F512G08CUCABH3-12IT:A
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 83MHZ
|
庫存2,754 |
|
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MT29F512G08CUCABH3-12IT:A TR
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 83MHZ
|
庫存2,520 |
|
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MT29F512G08CUCABH3-12ITZ:A
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 100LBGA
|
庫存2,016 |
|
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MT29F512G08CUCABH3-12ITZ:A TR
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 100LBGA
|
庫存7,218 |
|
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MT29F512G08CUCABJ3-10RZ:A
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 132LBGA
|
庫存7,272 |
|
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MT29F512G08CUCABJ3-10RZ:A TR
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 132LBGA
|
庫存8,334 |
|
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MT29F512G08CUCDBJ6-6ITR:D TR
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 166MHZ
|
庫存5,130 |
|
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MT29F512G08CUCDBJ6-6R:D
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 132LBGA
|
庫存5,652 |
|
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MT29F512G08CUCDBJ6-6R:D TR
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 166MHZ
|
庫存2,394 |
|
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MT29F512G08CUEDBJ6-12:D TR
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 83MHZ
|
庫存6,444 |
|
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MT29F512G08CUEDBJ6-12IT:D TR
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 83MHZ
|
庫存4,446 |
|
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MT29F512G08EBHAFB17A3WC1-FES
Micron Technology Inc. |
內存 IC FLASH NAND 512G TLC
|
庫存8,604 |
|
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MT29F512G08EBHAFB17A3WC1-R
Micron Technology Inc. |
內存 IC FLASH NAND 512G TLC
|
庫存4,482 |
|
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MT29F512G08EBHAFJ4-3ITFES:A
Micron Technology Inc. |
內存 IC FLASH NAND 512G PAR 132VBGA
|
庫存8,856 |
|
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MT29F512G08EBHAFJ4-3ITFES:A TR
Micron Technology Inc. |
內存 IC FLASH NAND 512G PAR 132VBGA
|
庫存5,742 |
|
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MT29F512G08EBHAFJ4-3T:A
Micron Technology Inc. |
內存 IC FLASH NAND 512G PAR 132VBGA
|
庫存6,714 |
|
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MT29F512G08EBHAFJ4-3T:A TR
Micron Technology Inc. |
內存 IC FLASH NAND 512G PAR 132VBGA
|
庫存8,082 |
|
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MT29F512G08EBHBFJ4-R:B
Micron Technology Inc. |
內存 IC FLASH NAND 512G PAR 132VBGA
|
庫存6,516 |
|
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MT29F512G08EBHBFJ4-R:B TR
Micron Technology Inc. |
內存 IC FLASH NAND 512G PAR 132VBGA
|
庫存3,906 |
|
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MT29F512G08EECAGJ4-5M:A
Micron Technology Inc. |
內存 TLC 512G 64GX8 VBGA DDP
|
庫存3,996 |
|
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MT29F512G08EECAGJ4-5M:A TR
Micron Technology Inc. |
內存 TLC 512G 64GX8 VBGA DDP
|
庫存7,578 |
|
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MT29F512G08EEHAFJ4-3R:A
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 333MHZ
|
庫存3,508 |
|
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MT29F512G08EEHAFJ4-3R:A TR
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 333MHZ
|
庫存6,174 |
|
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MT29F512G08EEHAFJ4-3RES:A
Micron Technology Inc. |
內存 IC FLASH 512G PARALLEL 333MHZ
|
庫存3,508 |
|