晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 240/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET P-CH 12V 80A POWER33 |
2,646 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 12V | 80A (Tc) | 2.5V, 4.5V | 3.9mOhm @ 22A, 4.5V | 1V @ 250µA | 99nC @ 4.5V | ±8V | 1250pF @ 6V | - | 2.4W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 50A WPAK |
4,014 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Ta) | 4.5V, 10V | 2.3mOhm @ 25A, 10V | - | 25nC @ 4.5V | ±20V | 4720pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerVDFN |
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Rohm Semiconductor |
NCH 190V 10A POWER MOSFET |
5,364 |
|
- | N-Channel | MOSFET (Metal Oxide) | 190V | 10A (Tc) | 4V, 10V | 182mOhm @ 5A, 10V | 2.5V @ 1mA | 52nC @ 10V | ±20V | 2000pF @ 25V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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STMicroelectronics |
MOSFET N-CH 500V 5A DPAK |
6,678 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 790mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | ±25V | 364pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
ON Semiconductor |
MOSFET N CH 80V 10.7A 8-MLP |
2,034 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 10.7A (Ta), 22A (Tc) | 8V, 10V | 11.7mOhm @ 10.7A, 10V | 4.5V @ 250µA | 41nC @ 10V | ±20V | 2640pF @ 40V | - | 2.3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
40V 1.2 MOHM T6 S08FL SIN |
2,484 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 41A (Ta), 237A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 93nC @ 10V | ±20V | 5600pF @ 25V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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|
STMicroelectronics |
MOSFET N-CH 100V 8A 8POWERFLAT |
5,616 |
|
DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | - | 10V | 20mOhm @ 4A, 10V | 4.5V @ 250µA | 22nC @ 10V | ±20V | 2000pF @ 50V | - | 3.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
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|
ON Semiconductor |
MOSFET N-CH 150V 37A D2PAK |
14,472 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 37A (Ta) | 10V | 50mOhm @ 18.5A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 3200pF @ 25V | - | 2W (Ta), 178W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
6,786 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 100A (Tc) | 3V, 8V | 2mOhm @ 30A, 8V | 1.6V @ 250µA | 31nC @ 4.5V | +10V, -8V | 4280pF @ 15V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 18.4A DPAK |
4,428 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 20mOhm @ 12A, 10V | 1V @ 250mA | 36.8nC @ 10V | ±20V | 1890pF @ 15V | - | 2.15W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 11.2A 8SOIC |
8,496 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 11.2A (Ta) | 6V, 10V | 9.8mOhm @ 11.2A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 2580pF @ 50V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 32A 8-SOP ADV |
5,076 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 32A (Ta) | 6.5V, 10V | 4.6mOhm @ 16A, 10V | 4V @ 500µA | 49nC @ 10V | ±20V | 3965pF @ 30V | - | 1.6W (Ta), 63W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 600V 12A DPAK |
3,258 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 320mOhm @ 6A, 10V | 4V @ 250µA | 19nC @ 10V | ±25V | 700pF @ 100V | - | 110W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 250V 17A DPAK |
8,370 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 250V | 17A (Tc) | 10V | 165mOhm @ 8.5A, 10V | 4V @ 250µA | 29.5nC @ 10V | ±20V | 1000pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 28A 8-SOIC |
4,644 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Tc) | 4.5V, 10V | 4.2mOhm @ 20A, 10V | 3V @ 250µA | 100nC @ 10V | ±20V | 3650pF @ 15V | - | 3W (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 60V 90A F7 8PWRFLAT |
8,730 |
|
STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 5.4mOhm @ 10.5A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 1600pF @ 25V | - | 4.8W (Ta), 94W (Tc) | 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 100V 100A D2PAK |
6,174 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 8.1mOhm @ 25A, 10V | 4V @ 1mA | 108nC @ 10V | ±20V | 7380pF @ 25V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
N-CHANNEL 600 V, 0.350 OHM TYP., |
7,290 |
|
MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 370mOhm @ 4A, 10V | 5V @ 250µA | 19nC @ 10V | ±25V | 730pF @ 100V | - | 52W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) HV | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 100V 50A DPAK |
5,238 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 10V | 28mOhm @ 25A, 10V | 4V @ 250µA | 62nC @ 10V | ±20V | 2180pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 16A 8-SOP |
14,706 |
|
U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Ta) | 4.5V, 10V | 6.9mOhm @ 8A, 10V | 2.3V @ 1mA | 87nC @ 10V | ±20V | 7540pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
15,384 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 3W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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ON Semiconductor |
MOSFET N-CH 30V POWER56 |
7,326 |
|
PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta), 22A (Tc) | 4.5V, 10V | 4.3mOhm @ 19A, 10V | 3V @ 1mA | 37nC @ 10V | ±20V | 2280pF @ 15V | - | 2.5W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
|
|
STMicroelectronics |
MOSFET N-CH 100V 25A DPAK |
6,786 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 4.5V, 10V | 35mOhm @ 12.5A, 10V | 2.5V @ 250µA | 52nC @ 5V | ±16V | 1710pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 55V 60A DPAK |
2,304 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 55V | 60A (Tc) | 4.5V, 10V | 15mOhm @ 30A, 10V | 2V @ 250µA | 56nC @ 5V | ±15V | 1950pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 100V 40A D2PAK |
22,584 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 35mOhm @ 17.5A, 10V | 4V @ 250µA | 55nC @ 10V | ±20V | 1550pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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STMicroelectronics |
MOSFET N-CH 1050V 1.5A DPAK |
6,840 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1050V | 1.5A (Tc) | 10V | 8Ohm @ 750mA, 10V | 5V @ 100µA | 10nC @ 10V | ±30V | 115pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
ON Semiconductor |
NMOS PWR56 100V 5.8 MOHM |
2,682 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 6.4mOhm @ 80A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 2220pF @ 50V | - | 214W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5.1x6.3) | 8-PowerTDFN |
|
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ON Semiconductor |
MOSFET N-CH 40V 100A |
4,302 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.4mOhm @ 80A, 4.5V | 3V @ 250µA | 125nC @ 10V | ±20V | 6700pF @ 25V | - | 227W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 70A TO220-3 |
22,122 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 10V | 11.6mOhm @ 70A, 10V | 4V @ 83µA | 66nC @ 10V | ±20V | 4355pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CHAN 40V POWERPAK SO-8 |
3,996 |
|
TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 3.6mOhm @ 20A, 10V | 2.3V @ 250µA | 330nC @ 10V | ±20V | 12900pF @ 20V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |