晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 1/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC |
GANFET TRANS 100V 1A BUMPED DIE |
3,286,026 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 1.7A (Ta) | 5V | 65mOhm @ 1A, 5V | 2.5V @ 600µA | 0.91nC @ 5V | +6V, -4V | 90pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 60V 1A BUMPED DIE |
49,314 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 60V | 1A (Ta) | 5V | 45mOhm @ 1A, 5V | 2.5V @ 800µA | 1.15nC @ 5V | +6V, -4V | 115pF @ 30V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 100V 2.8OHM BUMPED DIE |
1,148,130 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 500mA (Ta) | 5V | 3.3Ohm @ 50mA, 5V | 2.5V @ 20µA | 0.044nC @ 5V | +6V, -4V | 8.4pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 15V 3.4A DIE |
676,590 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 15V | 3.4A (Ta) | 5V | 30mOhm @ 1.5A, 5V | 2.5V @ 1mA | 0.93nC @ 5V | - | 105pF @ 6V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 100V 550MOHM BUMPED DI |
614,934 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 1.7A (Ta) | 5V | 550mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | +6V, -4V | 14pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 40V 10A BUMPED DIE |
8,381 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 10A (Ta) | 5V | 16mOhm @ 10A, 5V | 2.5V @ 2mA | 2.5nC @ 5V | +6V, -4V | 300pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | Die |
|
|
|
EPC |
GANFET TRANS 80V BUMPED DIE |
4,786 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 6.8A (Ta) | 5V | 25mOhm @ 6A, 5V | 2.5V @ 2mA | 2.4nC @ 5V | +6V, -4V | 210pF @ 40V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 100V 6A BUMPED DIE |
139,368 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 6A (Ta) | 5V | 30mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.2nC @ 5V | +6V, -4V | 220pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | Die |
|
|
|
EPC |
GANFET TRANS 100V 18A BUMPED DIE |
2,281,512 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 18A (Ta) | 5V | 16mOhm @ 11A, 5V | 2.5V @ 3mA | 4.5nC @ 5V | +6V, -4V | 420pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 200V 5A BUMPED DIE |
1,650 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 5A (Ta) | 5V | 100mOhm @ 3A, 5V | 2.5V @ 1mA | 1.3nC @ 5V | +6V, -4V | 140pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (4-Solder Bar) | Die |
|
|
|
EPC |
GAN TRANS 200V 8.5A BUMPED DIE |
70,254 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 8.5A (Ta) | 5V | 50mOhm @ 7A, 5V | 2.5V @ 1.5mA | 2.5nC @ 5V | +6V, -4V | 270pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 100V 36A BUMPED DIE |
614,322 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 36A (Ta) | 5V | 7mOhm @ 25A, 5V | 2.5V @ 5mA | 9nC @ 5V | +6V, -4V | 900pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | Die |
|
|
|
EPC |
GANFET TRANS 40V 33A BUMPED DIE |
73,122 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 53A (Ta) | 5V | 4mOhm @ 33A, 5V | 2.5V @ 9mA | 8.7nC @ 5V | +6V, -4V | 1180pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 40V BUMPED DIE |
14,964 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 16A (Ta) | 5V | 5mOhm @ 15A, 5V | 2.5V @ 6mA | 7.6nC @ 5V | +6V, -4V | 805pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 200V 22A BUMPED DIE |
78,360 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 22A (Ta) | 5V | 25mOhm @ 12A, 5V | 2.5V @ 3mA | 5.3nC @ 5V | +6V, -4V | 540pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (7-Solder Bar) | Die |
|
|
|
EPC |
GANFET NCH 60V 31A DIE |
28,920 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 60V | 31A (Ta) | 5V | 2.6mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | +6V, -4V | 1800pF @ 300V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 60V 31A DIE |
23,736 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 60V | 31A (Ta) | - | 2.6mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | - | 1800pF @ 300V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 80V 31A BUMPED DIE |
33,138 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 48A (Ta) | 5V | 3.2mOhm @ 30A, 5V | 2.5V @ 12mA | 13nC @ 5V | +6V, -4V | 1410pF @ 40V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 40V 31A DIE |
76,464 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 31A (Ta) | - | 2.4mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | - | 1900pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 40V 31A DIE |
26,238 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 31A (Ta) | 5V | 2.4mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | +6V, -4V | 1900pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 100V 3MOHM BUMPED DIE |
43,488 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 60A (Ta) | 5V | 3.2mOhm @ 25A, 5V | 2.5V @ 12mA | - | +6V, -4V | 1500pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 30V 60A BUMPED DIE |
52,068 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 30V | 60A (Ta) | - | 1.3mOhm @ 40A, 5V | 2.5V @ 20mA | - | - | 2300pF @ 15V | - | - | - | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET NCH 40V 60A DIE |
13,752 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 60A (Ta) | 5V | 1.5mOhm @ 37A, 5V | 2.5V @ 19mA | - | +6V, -4V | 2100pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 60V 90A BUMPED DIE |
44,250 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 60V | 90A (Ta) | 5V | 2.2mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | +6V, -4V | 1780pF @ 30V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 80V 90A BUMPED DIE |
29,760 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 90A (Ta) | 5V | 2.5mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | +6V, -4V | 1650pF @ 40V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
EPC |
GAN TRANS 150V 7MOHM BUMPED DIE |
32,334 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 150V | 31A (Ta) | - | 7mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | - | 1140pF @ 75V | - | - | - | Surface Mount | Die | Die |
|
|
|
EPC |
GANFET TRANS 100V 48A BUMPED DIE |
2,448 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 48A (Ta) | 5V | 4mOhm @ 30A, 5V | 2.5V @ 11mA | 15nC @ 5V | +6V, -4V | 1530pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
STMicroelectronics |
MOSFET N-CH 400V 1.8A SOT223 |
34,602 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 3.4Ohm @ 600mA, 10V | 4.5V @ 50µA | 11nC @ 10V | ±30V | 165pF @ 50V | - | 3.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
STMicroelectronics |
MOSFET N-CH 60V 4A SOT223 |
75,354 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 4A (Tc) | 5V, 10V | 100mOhm @ 1.5A, 10V | 2.8V @ 250µA | 9nC @ 5V | ±16V | 340pF @ 25V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
STMicroelectronics |
MOSFET P CH 60V 10A DPAK |
52,380 |
|
DeepGATE™, STripFET™ VI | P-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 160mOhm @ 5A, 10V | 4V @ 250µA | 6.4nC @ 10V | ±20V | 340pF @ 48V | - | 35W (Tc) | 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |