晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 285/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
MOSFET N-CH 55V 75A TO-220AB |
8,700 |
|
UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 275nC @ 20V | ±20V | 4000pF @ 25V | - | 325W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 13A TO220-3 |
11,328 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36nC @ 10V | ±20V | 1420pF @ 100V | Super Junction | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-220-3 |
8,874 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | ±20V | 996pF @ 400V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 60V 8.5A TO220FP |
6,390 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 8.5A (Tc) | 10V | 280mOhm @ 5.1A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
ON Semiconductor |
MOSFET N-CH 150V 37A TO-220AB |
13,704 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 5A (Ta), 37A (Tc) | 6V, 10V | 36mOhm @ 16A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 2800pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 64A TO220AB |
9,192 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 64A (Tc) | 7.5V, 10V | - | 4V @ 250µA | 48nC @ 10V | ±20V | 1950pF @ 100V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 800V 8A TO-220 |
14,526 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 630mOhm @ 4A, 10V | 5V @ 100µA | 15nC @ 10V | ±30V | 427pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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|
Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO-3PN |
6,072 |
|
π-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Ta) | 10V | 2Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | ±30V | 1350pF @ 25V | - | 200W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 650V 19A TO220F-3 |
17,472 |
|
SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 19A (Tc) | 10V | 165mOhm @ 9.5A, 10V | 4.5V @ 1.9mA | 35nC @ 10V | ±30V | 1415pF @ 400V | - | 35W (Tc) | -55°C ~ 150°C | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
|
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|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 100A TO-220 |
7,416 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 2.7mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 10500pF @ 30V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
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|
Rohm Semiconductor |
MOSFET N-CH 600V 20A TO220FM |
14,292 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 40nC @ 10V | ±20V | 1550pF @ 25V | Schottky Diode (Isolated) | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 9.5A TO220-FP |
13,968 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 7.6A, 10V | 4.5V @ 630µ | 37nC @ 10V | ±20V | 1750pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 37A TO220FP |
16,992 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 37A (Tc) | 10V | 18mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 65A TO-220 |
7,128 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 65A (Tc) | 10V | 4.8mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5400pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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|
IXYS |
MOSFET P-CH 65V 28A TO-220 |
5,418 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 65V | 28A (Tc) | 10V | 45mOhm @ 14A, 10V | 4.5V @ 250µA | 46nC @ 10V | ±15V | 2030pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 120V 100A TO220-3 |
7,248 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 100A (Tc) | 10V | 7.6mOhm @ 100A, 10V | 4V @ 130µA | 101nC @ 10V | ±20V | 6640pF @ 60V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 200V 48A TO-220 |
8,514 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 200V | 48A (Tc) | 10V | 50mOhm @ 24A, 10V | 4.5V @ 250µA | 60nC @ 10V | ±30V | 3000pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 80V 120A TO-220AB |
9,984 |
|
STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.9mOhm @ 60A, 10V | 4.5V @ 250µA | 120nC @ 10V | ±20V | 8710pF @ 40V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 800V 2A TO-220FM |
10,824 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 4.3Ohm @ 1A, 10V | 5V @ 1mA | 12.7nC @ 10V | ±30V | 210pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
|
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Vishay Siliconix |
MOSFET N-CH 500V 18A TO220 |
8,784 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Tc) | 10V | 270mOhm @ 10A, 10V | 5V @ 250µA | 76nC @ 10V | ±30V | 2942pF @ 25V | - | 223W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 14A TO-220 |
14,448 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta), 80A (Tc) | 4.5V, 10V | 6mOhm @ 80A, 10V | 2.5V @ 250µA | 145nC @ 10V | ±20V | 9160pF @ 15V | - | 242W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 6.5A TO220 |
6,840 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 6.5A (Ta) | 10V | 950mOhm @ 3.3A, 10V | 4V @ 280µA | 13nC @ 10V | ±20V | 700pF @ 300V | - | 110W (Tc) | 150°C | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 800 V, 0.75 OHM TYP., |
6,174 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | 810mOhm @ 4A, 10V | 5V @ 100µA | 17.7nC @ 10V | ±30V | 425pF @ 10V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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|
IXYS |
MOSFET N-CH 600V 10A D2-PAK |
6,576 |
|
HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 740mOhm @ 5A, 10V | 5.5V @ 1mA | 32nC @ 10V | ±30V | 1610pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
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Infineon Technologies |
MOSFET N-CH 55V 110A TO-220AB |
6,750 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 8mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | ±20V | 3247pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 140A TO220 |
21,528 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 140A (Tc) | 6V, 10V | 2.5mOhm @ 20A, 10V | 3.2V @ 250µA | 180nC @ 10V | ±20V | 14200pF @ 30V | - | 1.9W (Ta), 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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|
ON Semiconductor |
MOSFET N-CH 60V 85A TO-220 |
15,552 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 85A (Tc) | 10V | 10mOhm @ 42.5A, 10V | 4V @ 250µA | 112nC @ 10V | ±25V | 4120pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 800 V, 0.5 OHM TYP., 7 |
7,056 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | - | 5V @ 100µA | - | ±30V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
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|
Rohm Semiconductor |
NCH 600V 20A POWER MOSFET |
15,036 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 40nC @ 10V | ±20V | 1550pF @ 25V | - | 231W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
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ON Semiconductor |
MOSFET N-CH 55V 75A TO-220AB |
13,440 |
|
UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 210nC @ 20V | ±20V | 3200pF @ 25V | - | 285W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |