晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 290/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
MOSFET N-CH 1000V 41A SOT-227 |
6,084 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 42A (Tc) | 10V | 210mOhm @ 33A, 10V | 5V @ 5mA | 570nC @ 10V | ±30V | 18500pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
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Microsemi |
MOSFET N-CH 500V 88A SOT-227 |
6,912 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 88A (Tc) | 10V | 38mOhm @ 44A, 10V | 5V @ 5mA | 270nC @ 10V | ±30V | 12000pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 1000V 37A SOT-227 |
8,910 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395nC @ 10V | ±30V | 9750pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
STMicroelectronics |
MOSFET N-CH 500V 2.3A TO220AB |
19,092 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 2.3A (Tc) | 10V | 3.3Ohm @ 1.15A, 10V | 4.5V @ 50µA | 15nC @ 10V | ±30V | 280pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Texas Instruments |
40V N-CHANNEL NEXFET POWER MOSF |
16,440 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 124A (Tc) | 4.5V, 10V | 5.3mOhm @ 19A, 10V | 2.4V @ 250µA | 61nC @ 10V | ±20V | 4280pF @ 20V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 16A I-PAK |
6,552 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 640pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 4A ITO220 |
16,752 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | ±30V | 500pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Infineon Technologies |
MOSFET N-CHANNEL 600V 6A TO220 |
7,704 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 21W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 650V 4A ITO220 |
20,496 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 3.37Ohm @ 2A, 10V | 4.5V @ 250µA | 13.46nC @ 10V | ±30V | 549pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 500V 5A TO220FM |
7,980 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 14nC @ 10V | ±30V | 600pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V TO-220-3 |
6,828 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 43A TO220-3-31 |
8,724 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 9.3mOhm @ 40A, 10V | 4V @ 34µA | 48nC @ 10V | ±20V | 3900pF @ 30V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-31 Full Pack | TO-220-3 Full Pack |
|
|
|
Nexperia |
MOSFET N-CH 110V 27.6A TO220AB |
18,540 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 110V | 27.6A (Tc) | 10V | 50mOhm @ 14A, 10V | 4V @ 1mA | 30nC @ 10V | ±20V | 1240pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 500V 5A ITO220S |
19,008 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.38Ohm @ 1.7A, 10V | 4.5V @ 250µA | 15nC @ 10V | ±30V | 586pF @ 50V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
|
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ON Semiconductor |
MOSFET N-CH 500V 11.5A D2PAK |
18,732 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 11.5A (Tc) | 10V | 650mOhm @ 6A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 1315pF @ 25V | - | 165W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 7A ITO220S |
18,192 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 1169pF @ 50V | - | 44.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
|
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|
Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3 |
14,328 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.1mOhm @ 80A, 10V | 4V @ 45µA | 56nC @ 10V | ±20V | 4500pF @ 20V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N CH 100V 62A TO220AB |
16,200 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 62A (Tc) | 10V | 13.5mOhm @ 37A, 10V | 4V @ 100µA | 87nC @ 10V | ±20V | 3180pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
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STMicroelectronics |
MOSFET |
13,758 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 19.5nC @ 10V | ±25V | 718pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 500V 7A TO220 |
10,140 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Tc) | 10V | 1.3Ohm @ 3.5A, 10V | 4V @ 1mA | 15nC @ 10V | ±30V | 450pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
|
|
ON Semiconductor |
MOSFET N-CH 500V TO-220AB-3 |
7,824 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 18nC @ 10V | ±25V | 735pF @ 25V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 500V 7A TO220 |
9,348 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Ta) | 10V | 1.05Ohm @ 3.5A, 10V | 4.5V @ 1mA | 13nC @ 10V | ±30V | 500pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
20,556 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 4V, 5V | 270mOhm @ 4.6A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 200V 0.56A 4-DIP |
14,016 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 560mA (Ta) | 10V | 1.5Ohm @ 340mA, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | 340pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
|
|
|
Microchip Technology |
MOSFET P-CH 350V 0.086A TO92-3 |
21,408 |
|
- | P-Channel | MOSFET (Metal Oxide) | 350V | 86mA (Tj) | 4.5V, 10V | 25Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Infineon Technologies |
MOSFET N-CH 800V 4.5A TO220-3 |
6,384 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 1.2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | ±20V | 300pF @ 500V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 7A TO220SIS |
8,064 |
|
DTMOSV | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | ±30V | 380pF @ 300V | - | 30W | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 650V 10A ITO220S |
20,148 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 900mOhm @ 2A, 10V | 4.5V @ 250µA | 34nC @ 10V | ±30V | 1650pF @ 50V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
|
|
|
Vishay Siliconix |
MOSFET N-CH 500V 8.7A TO220AB |
19,968 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 8.7A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 527pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 500V 8A TO220FM |
10,908 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 4V @ 1mA | 23nC @ 10V | ±30V | 1120pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |