晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 308/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
200V/160A ULTRA JUNCTION X3-CLAS |
6,336 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 160A (Tc) | 10V | 6.2mOhm @ 110A, 10V | 4.5V @ 4mA | 204nC @ 10V | ±20V | 13600pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET 1KV 44A ULTRA JCT SOT227 |
7,794 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 44A (Tc) | 10V | 125mOhm @ 26A, 10V | 6V @ 4mA | 245nC @ 10V | ±30V | 6725pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 150V 400A TO-264 |
8,352 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 400A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4.5V @ 1mA | 430nC @ 10V | ±20V | 14500pF @ 25V | - | 1500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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Microsemi |
GEN2 SIC MOSFET 700V 15MOHM TO-2 |
6,432 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 700V | 131A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 1mA | 215nC @ 20V | +25V, -10V | 4500pF @ 700V | - | 400W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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|
IXYS |
MOSFET 1KV 65A ULTRA JCT SOT227 |
5,472 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 56A (Tc) | 10V | 89mOhm @ 35A, 10V | 6V @ 8mA | 350nC @ 10V | ±30V | 9150pF @ 25V | - | 1200W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Rohm Semiconductor |
BSM180C12P2E202 IS A SIC (SILICO |
3,978 |
|
- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200V | 204A (Tc) | - | - | 4V @ 35.2mA | - | +22V, -6V | 20000pF @ 10V | - | 1360W (Tc) | 175°C (TJ) | Chassis Mount | Module | Module |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 100MA USM |
6,372 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 2.5V | 12Ohm @ 10mA, 2.5V | - | - | 10V | 8.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
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Vishay Siliconix |
MOSFET P-CH 20V 11A MICROFOOT |
8,082 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 11A (Tc) | 1.7V, 4.5V | 75mOhm @ 1A, 4.5V | 1.2V @ 250µA | 25nC @ 10V | ±12V | 600pF @ 10V | - | 2.77W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-Micro Foot™ (1.5x1) | 6-UFBGA |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.1A UMT3F |
5,202 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.8Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±10V | 15pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | UMT3F | SC-85 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.33A SSM |
8,586 |
|
U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 20V | 330mA (Ta) | 1.5V, 4.5V | 1.31Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2nC @ 4V | ±8V | 43pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Diodes Incorporated |
MOSFET N-CH 60V 260MA 3DFN |
8,676 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 260mA (Ta) | 5V, 10V | 3Ohm @ 115mA, 10V | 2V @ 250µA | - | ±20V | 25pF @ 25V | - | 430mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1006-3 | 3-UFDFN |
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Diodes Incorporated |
MOSFETP-CHAN 20V X1-DFN1212-3 |
5,454 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 600mA (Ta) | 1.2V, 4.5V | 1Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.8nC @ 8V | ±8V | 46.1pF @ 10V | - | 400mW | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1212-3 | 3-UDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 2A SOT23-3 |
7,182 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 4.5V, 10V | 85mOhm @ 3.2A, 10V | 3V @ 250µA | 12.3nC @ 10V | ±20V | 606pF @ 20V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET NCH 20V 630MA SOT523 |
6,552 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 20V | 630mA (Ta) | 1.8V, 4.5V | 400mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.74nC @ 4.5V | ±6V | 60.67pF @ 16V | - | 280mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Rohm Semiconductor |
MOSFET N-CH 45V 1.6A TUMT3 |
5,526 |
|
- | N-Channel | MOSFET (Metal Oxide) | 45V | 1.6A (Ta) | 2.5V, 4.5V | 190mOhm @ 1.6A, 4.5V | 1.5V @ 1mA | 2.3nC @ 4.5V | ±12V | 150pF @ 10V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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Vishay Siliconix |
MOSFET P-CH 8V 6A 1206-8 |
8,550 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | 6A (Tc) | 1.5V, 4.5V | 36mOhm @ 5.1A, 4.5V | 800mV @ 250µA | 35nC @ 8V | ±5V | 1290pF @ 4V | - | 2.5W (Ta), 6.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET™ | 8-SMD, Flat Lead |
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Diodes Incorporated |
MOSFET P-CH 50V 200MA 3DFN |
3,996 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 2.5V, 4V | 6Ohm @ 100mA, 4V | 1.2V @ 250µA | 0.58nC @ 4V | ±8V | 50.54pF @ 25V | - | 425mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1006 (1.0x0.6) | 3-UFDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.8A SSM |
2,322 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 20V | 800mA (Ta) | 1.5V, 4.5V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | ±8V | 55pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Diodes Incorporated |
MOSFET P-CH 20V 700MA SC59-3 |
6,912 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 700mA (Ta) | 2.5V, 4.5V | 300mOhm @ 400mA, 4.5V | 1.2V @ 250µA | - | ±12V | 180pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-59-3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 20V 0.2A UMT3F |
4,950 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 2.5V | 1.2Ohm @ 200mA, 2.5V | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | UMT3F | SC-85 |
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IXYS Integrated Circuits Division |
MOSFET N-CH 400V SOT-89 |
13,626 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 300mA (Ta) | 0V | 9Ohm @ 300mA, 0V | - | - | 15V | - | Depletion Mode | 1.1W (Ta) | -40°C ~ 110°C (TA) | Surface Mount | SOT-89 | TO-243AA |
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Diodes Incorporated |
MOSFET N-CH 30V 7A POWERDI |
8,244 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 23mOhm @ 10A, 10V | 2.4V @ 250µA | 17nC @ 10V | ±20V | 478.9pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 10A HSMT8 |
5,904 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 10.4mOhm @ 10A, 10V | 2.5V @ 1mA | 22nC @ 10V | ±20V | 1100pF @ 15V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 250V 5A LPT |
13,974 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 5A (Tc) | 10V | 1.36Ohm @ 2.5A, 10V | 5.5V @ 1mA | 8.5nC @ 10V | ±30V | 350pF @ 25V | - | 1.56W (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | LPTS (SC-83) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CHANNEL 100V 1.5A SC73 |
8,442 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Ta) | 4.5V, 10V | 385mOhm @ 1.5A, 10V | 2.7V @ 250µA | 6.8nC @ 10V | ±20V | 195pF @ 50V | - | 770mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 12V 6A SOT23 |
2,970 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 6A (Tc) | 1.5V, 4.5V | 28mOhm @ 5A, 4.5V | 1V @ 250µA | 35nC @ 8V | ±8V | 1275pF @ 6V | - | 1.2W (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET P-CH 20V 1.2A 3DFN |
3,600 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 1.2V, 4.5V | 447mOhm @ 1.2A, 4.5V | 950mV @ 250µA | 2.3nC @ 4.5V | ±8V | 116pF @ 10V | - | 360mW (Ta), 5.68W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1010D-3 | 3-XDFN Exposed Pad |
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Rohm Semiconductor |
MOSFET P-CH 20V 2.4A TSST8 |
4,068 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 1.5V, 4.5V | 105mOhm @ 2.4A, 4.5V | 1V @ 1mA | 6.7nC @ 4.5V | ±10V | 850pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 8-TSST | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET P-CH 12V 6A TSST8 |
6,012 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.5V, 4.5V | 19mOhm @ 6A, 4.5V | 1V @ 1mA | 80nC @ 4.5V | -8V | 7800pF @ 6V | - | 600mW (Ta) | 150°C (TJ) | Surface Mount | 8-TSST | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET P-CH 30V 1.5A TUMT3 |
8,766 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4V, 10V | 160mOhm @ 1.5A, 10V | 2.5V @ 1mA | 6.4nC @ 10V | ±20V | 230pF @ 10V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |