晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 496/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET P-CH 80V 28A PPAK SO-8 |
8,550 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 28A (Tc) | 6V, 10V | 25mOhm @ 10.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±20V | 5160pF @ 40V | - | 5.2W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 80V 28A PPAK SO-8 |
5,040 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 28A (Tc) | 6V, 10V | 25mOhm @ 10.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±20V | 5160pF @ 40V | - | 5.2W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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|
Sanken |
MOSFET N-CH 200V TO-220F |
2,214 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Ta) | 10V | 175mOhm @ 9A, 10V | 4V @ 1mA | - | ±20V | 850pF @ 10V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
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|
Sanken |
MOSFET N-CH 50V 50A TO-220F |
8,982 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 50A (Ta) | 10V | 13mOhm @ 25A, 10V | 2.5V @ 250µA | - | ±20V | 2700pF @ 10V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 4.5A TO-220SIS |
5,958 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 4.5A (Ta) | 10V | 1.67Ohm @ 2.3A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
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|
ON Semiconductor |
MOSFET N-CH 100V 44A D2PAK |
2,664 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 7.2A (Ta), 44A (Tc) | 6V, 10V | 28mOhm @ 44A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | 1710pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 120A TO-220-3 |
2,214 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4V @ 250µA | 99nC @ 10V | ±20V | 8030pF @ 30V | - | 205W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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|
Infineon Technologies |
MOSFET N-CH 55V 75A TO220AB |
4,320 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | - | 7.5mOhm @ 75A, 10V | 4V @ 250µA | 95nC @ 10V | - | 2840pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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|
IXYS |
MOSFET N-CH 650V 2A X2 TO-252 |
3,024 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 2A (Tc) | 10V | 2.3Ohm @ 1A, 10V | 5V @ 250µA | 4.3nC @ 10V | ±30V | 180pF @ 25V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Infineon Technologies |
MOSFET N-CH BARE DIE |
2,646 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Siliconix |
MOSFET N-CH 800V D2PAK TO-263 |
6,192 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 7A TO-220SIS |
8,424 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 7A (Ta) | 10V | 1.25Ohm @ 3.5A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
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|
Infineon Technologies |
MOSFET N-CH 60V 43A D2PAK |
8,262 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | ±20V | 1150pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 8A TO-220SIS |
6,588 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 8A (Ta) | 10V | 900mOhm @ 4A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 7.5A TO-220SIS |
3,526 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 7.5A (Ta) | 10V | 1.04Ohm @ 3.8A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 80V 120A I2PAK |
5,670 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4.3mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | ±20V | 8161pF @ 40V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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|
ON Semiconductor |
MOSFET N-CH 30V 64A U8FL |
5,022 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 16.3A (Ta), 64A (Tc) | - | 3.5mOhm @ 20A, 10V | 2.3V @ 250µA | 29.4nC @ 10V | - | 2075pF @ 15V | - | - | - | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Sanken |
MOSFET N-CH 250V 25A TO-220F |
3,276 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 25A (Ta) | 10V | 75mOhm @ 12A, 10V | 4.5V @ 1mA | - | ±30V | 2000pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
Vishay Siliconix |
MOSFET P-CH 30V 45A DPAK |
4,284 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 45A (Tc) | 4.5V, 10V | 8.7mOhm @ 20A, 10V | 2.5V @ 250µA | 90nC @ 10V | ±20V | 2700pF @ 15V | - | 2.1W (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
IXYS |
MOSFET N-CH 650V 8A X2 TO-220 |
4,338 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 500mOhm @ 4A, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 800pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 3A TO-220SIS |
4,698 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 3A (Ta) | 10V | 2.25Ohm @ 1.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5A TO-220SIS |
5,004 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 5A (Ta) | 10V | 1.43Ohm @ 2.5A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Nexperia |
BUK7J1R0-40H/SOT1023/4 LEADS |
2,718 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Nexperia |
BUK9J0R9-40H/SOT1023/4 LEADS |
5,850 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Sanken |
MOSFET N-CH 250V TO-220F |
8,172 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 18A (Ta) | 10V | 250mOhm @ 9A, 10V | 4V @ 1mA | - | ±20V | 850pF @ 10V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 38A 250A 5DFN |
4,734 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 38A (Ta), 250A (Tc) | 4.5V, 10V | 1.36mOhm @ 50A, 10V | 2V @ 250µA | 91nC @ 10V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
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|
Infineon Technologies |
TRANSISTOR N-CH |
8,838 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
IXYS |
MOSFET N-CH 800V 3.5A TO-220 |
3,546 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.6A (Tc) | 10V | 3.4Ohm @ 500mA, 10V | 5.5V @ 100µA | 14.2nC @ 10V | ±30V | 750pF @ 25V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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|
IXYS |
MOSFET N-CH 200V 15A TO-252 |
2,538 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 15A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
IXYS |
MOSFET N-CH 150V 24A TO-252 |
8,442 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 24A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |