晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 75/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CHANNEL 40V 41A 8WDFN |
57,852 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 41A (Tc) | 4.5V, 10V | 9mOhm @ 10A, 10V | 2.2V @ 20µA | 5.5nC @ 4.5V | ±20V | 660pF @ 25V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET P-CH 20V 18A 1212-8 PPAK |
22,128 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 18A (Tc) | 1.8V, 4.5V | 9mOhm @ 15A, 4.5V | 1V @ 250µA | 168nC @ 8V | ±8V | 5875pF @ 10V | - | 3.7W (Ta), 39.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
18,546 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
ON Semiconductor |
MOSFET P-CH 20V 8A 8-SOIC |
151,008 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 8A (Ta) | 2.5V, 4.5V | 24mOhm @ 8A, 4.5V | 1.5V @ 250µA | 36nC @ 4.5V | ±8V | 2694pF @ 10V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
|
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|
Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
23,976 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 45Ohm @ 120mA, 10V | 2.3V @ 94µA | 6.6nC @ 10V | ±20V | 150pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 150V 420MA SC70 |
46,350 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 420mA (Ta) | 10V | 2.6Ohm @ 500mA, 10V | 4.5V @ 100µA | 6.3nC @ 10V | ±20V | - | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-363 | 6-TSSOP, SC-88, SOT-363 |
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|
Infineon Technologies |
MOSFET N-CH 60V 46A TDSON-8 |
74,946 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 46A (Tc) | 6V, 10V | 9.7mOhm @ 40A, 10V | 3.3V @ 14µA | 15nC @ 10V | ±20V | 1075pF @ 30V | - | 2.5W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CHANNEL 800V 3A SOT223 |
23,232 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 2Ohm @ 940mA, 10V | 3.5V @ 50µA | 9nC @ 10V | ±20V | 175pF @ 500V | - | 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Texas Instruments |
MOSFET N-CHANNEL 30V 25A 6WSON |
19,392 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Tc) | 2.5V, 8V | 15.1mOhm @ 8A, 8V | 1.2V @ 250µA | 6nC @ 4.5V | ±10V | 879pF @ 15V | - | 16W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Vishay Siliconix |
MOSFET N-CH 20V 8A 6-TSOP |
590,742 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 8A (Tc) | 1.8V, 4.5V | 27mOhm @ 5.1A, 4.5V | 1V @ 250µA | 24nC @ 8V | ±8V | 860pF @ 10V | - | 2W (Ta), 3.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 60V 4.1A 6-TSOP |
86,466 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 4.1A (Tc) | 4.5V, 10V | 100mOhm @ 3.2A, 10V | 3V @ 250µA | 11nC @ 10V | ±20V | 350pF @ 30V | - | 2W (Ta), 3.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 240V 200MA TO236 |
25,188 |
|
- | N-Channel | MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 2.5V, 10V | 4Ohm @ 300mA, 10V | 2V @ 250µA | 8nC @ 10V | ±20V | - | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Texas Instruments |
MOSFET N-CH 30V 65A 8SON |
68,202 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 65A (Tc) | 4.5V, 10V | 10.8mOhm @ 11A, 10V | 2.1V @ 250µA | 3.6nC @ 4.5V | ±20V | 530pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 30V 17A DPAK |
52,578 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Tc) | 5V, 10V | 50mOhm @ 8.5A, 10V | 2.2V @ 250µA | 6.5nC @ 5V | ±16V | 320pF @ 25V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 12V 6.7A DPAK |
24,330 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 12V | 6.7A (Ta) | 1.8V, 4.5V | 28mOhm @ 6.7A, 4.5V | 1.5V @ 250µA | 21nC @ 4.5V | ±8V | 1290pF @ 6V | - | 52W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 3.2A TO252-3 |
37,878 |
|
CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 1.2A SOT-223 |
22,038 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1.2A (Ta) | 4.5V, 10V | 600mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | ±20V | 152.7pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 150V 1.4A 6-TSOP |
116,346 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 1.4A (Tc) | 6V, 10V | 750mOhm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 510pF @ 50V | - | 2W (Ta), 3.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 80V 3A SSOT-6 |
68,586 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 3A (Ta) | 6V, 10V | 77mOhm @ 3A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 634pF @ 40V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
14,730 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 3.1mOhm @ 25A, 10V | 2.2V @ 1mA | 46.4nC @ 10V | ±20V | 2939pF @ 15V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
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|
ON Semiconductor |
MOSFET P-CH 20V 4.8A CHIPFET |
149,058 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.8A (Tj) | 1.8V, 4.5V | 34mOhm @ 4.8A, 4.5V | 1.5V @ 250µA | 35nC @ 4.5V | ±8V | 2100pF @ 16V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET™ | 8-SMD, Flat Lead |
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ON Semiconductor |
MOSFET P-CH 250V 3.1A DPAK |
24,912 |
|
QFET® | P-Channel | MOSFET (Metal Oxide) | 250V | 3.1A (Tc) | 10V | 2.1Ohm @ 1.55A, 10V | 5V @ 250µA | 14nC @ 10V | ±30V | 420pF @ 25V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
40V N CH MOSFET |
36,804 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 89A (Tc) | 4.5V, 10V | 7.9mOhm @ 15A, 10V | 2.4V @ 250µA | 40nC @ 20V | ±20V | - | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
|
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ON Semiconductor |
MOSFET P-CH 60V 5.7A 8-WDFN |
278,502 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 5.7A (Ta) | 4.5V, 10V | 52mOhm @ 6A, 10V | 3V @ 250µA | 25nC @ 10V | ±20V | 1258pF @ 30V | - | 3.2W (Ta), 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
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ON Semiconductor |
MOSFET N-CH 100V 15.6A DPAK |
44,508 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 15.6A (Tc) | 5V, 10V | 100mOhm @ 7.8A, 10V | 2V @ 250µA | 18nC @ 5V | ±20V | 870pF @ 25V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Nexperia |
MOSFET N-CH 300V 350MA SC73 |
248,754 |
|
- | N-Channel | MOSFET (Metal Oxide) | 300V | 350mA (Ta) | 10V | 6Ohm @ 250mA, 10V | 2V @ 1mA | - | ±20V | 120pF @ 25V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
|
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|
EPC |
GANFET N-CH 80V 1.7A 6SOLDER BAR |
56,460 |
|
Automotive, AEC-Q101, eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 1.7A | 5V | 80mOhm @ 1A, 5V | 2.5V @ 600µA | 0.83nC @ 5V | +5.75V, -4V | 88pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Diodes Incorporated |
MOSFET P-CH 60V 0.28A TO92-3 |
32,178 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 18V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Vishay Siliconix |
MOSFET P-CH 12V 4.1A SOT23-3 |
24,852 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 4.1A (Ta) | 1.8V, 4.5V | 32mOhm @ 5.3A, 4.5V | 1V @ 250µA | 18nC @ 4.5V | ±8V | 1100pF @ 6V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 40V 14A TO252 DPAK |
26,934 |
|
- | P-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta) | 4.5V, 10V | 11mOhm @ 9.8A, 10V | 2.5V @ 250µA | 47.5nC @ 5V | ±25V | 4234pF @ 20V | - | 3.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |