晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 837/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 600V 8.1A TO220-FP |
2,538 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 8.1A (Tc) | 10V | 520mOhm @ 2.8A, 10V | 3.5V @ 230µA | 23.4nC @ 10V | ±20V | 512pF @ 100V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
5,670 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 140µA | 195nC @ 10V | ±20V | 15750pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
8,712 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 120µA | 160nC @ 10V | ±20V | 13150pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
2,088 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.1mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | ±20V | 21900pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Infineon Technologies |
MOSFET N-CH 60V 180A TO263-7 |
7,254 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 180A (Tc) | 10V | 1.7mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | ±20V | 21900pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 60V 45A TO263-3 |
2,682 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 10V | 9.1mOhm @ 45A, 10V | 4V @ 34µA | 47nC @ 10V | ±20V | 3785pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 60V 45A TO263-3 |
3,078 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 4.5V, 10V | 7.9mOhm @ 45A, 10V | 2.2V @ 35µA | 64nC @ 10V | ±16V | 4780pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3 |
8,874 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.5mOhm @ 80A, 10V | 4V @ 65µA | 60nC @ 10V | ±20V | 3900pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3 |
4,392 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 5.4mOhm @ 80A, 10V | 4V @ 60µA | 81nC @ 10V | ±20V | 6500pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3 |
6,894 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 7.1mOhm @ 80A, 10V | 4V @ 40µA | 56nC @ 10V | ±20V | 4500pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3 |
2,448 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 4.8mOhm @ 80A, 10V | 2.2V @ 60µA | 110nC @ 10V | ±16V | 8180pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3 |
3,672 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 6.4mOhm @ 80A, 10V | 2.2V @ 40µA | 75nC @ 10V | ±16V | 5680pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO263-3 |
3,636 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 3.7mOhm @ 90A, 10V | 4V @ 90µA | 128nC @ 10V | ±20V | 10400pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO263-3 |
8,442 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 3.4mOhm @ 90A, 10V | 2.2V @ 90µA | 170nC @ 10V | ±16V | 13000pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 30A TO252-3 |
7,542 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 30A, 10V | 2.2V @ 10µA | 21nC @ 10V | ±16V | 1560pF @ 25V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3 |
3,222 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 34µA | 47nC @ 10V | ±20V | 3785pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3 |
6,696 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 7.8mOhm @ 50A, 10V | 2.2V @ 35µA | 64nC @ 10V | ±16V | 4780pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
6,552 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 3.8mOhm @ 90A, 10V | 4V @ 90µA | 128nC @ 10V | ±20V | 10400pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
7,488 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 5.1mOhm @ 90A, 10V | 4V @ 60µA | 81nC @ 10V | ±20V | 6500pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
8,100 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 6.9mOhm @ 90A, 10V | 4V @ 40µA | 56nC @ 10V | ±20V | 4500pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
2,100 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 3.5mOhm @ 90A, 10V | 2.2V @ 90µA | 170nC @ 10V | ±16V | 13000pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
6,606 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 4.6mOhm @ 90A, 10V | 2.2V @ 60µA | 110nC @ 10V | ±16V | 8180pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
3,726 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 6.3mOhm @ 90A, 10V | 2.2V @ 40µA | 75nC @ 10V | ±16V | 5680pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Infineon Technologies |
MOSFET N-CH 75V 120A TO262-3 |
5,382 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | - | 2.3mOhm @ 100A, 10V | 3.8V @ 273µA | 206nC @ 10V | - | 14400pF @ 37.5V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 100A TO262-3 |
5,274 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | - | 3.4mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | - | 8130pF @ 37.5V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 75V 80A TO262-3 |
6,768 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 3.8V @ 91µA | 68nC @ 10V | ±20V | 4750pF @ 37.5V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 60V 120A TO262-3 |
3,114 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 140µA | 195nC @ 10V | ±20V | 15750pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO262-3 |
8,550 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 120µA | 160nC @ 10V | ±20V | 13150pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 60V 120A TO262-3 |
4,014 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | ±20V | 21900pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 58A TO262-3 |
2,718 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 58A (Tc) | 6V, 10V | 12.6mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2500pF @ 50V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |