Taiwan Semiconductor Corporation 整流器-單

系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

制造商Taiwan Semiconductor Corporation

記錄 5,388

頁面 10/180

型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
RS1G R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	100,356	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1A R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	19,134	-	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS13L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	26,496	-	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
S2GA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	110,784	-	Standard	400V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2AA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO214AC	16,986	-	Standard	50V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2JA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO214AC	16,506	-	Standard	600V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1JLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W	24,480	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 600V	16pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS1JL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 800MA SUBSMA	55,242	-	Standard	600V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFAL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 500MA SUB SMA	15,798	-	Standard	50V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFDL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 500MA SUBSMA	19,524	-	Standard	200V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HER106G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	58,404	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS12L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SUB SMA	51,828	-	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS13LHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	22,722	-	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
HS1JL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	58,704	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1AL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	24,054	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1FL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	22,764	-	Standard	300V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1GL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	27,462	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S2MA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.5A DO214AC	104,922	-	Standard	1000V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2KA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO214AC	18,534	-	Standard	800V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS110L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	32,058	-	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	22,080	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1KL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	22,626	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS2AA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO214AC	90,282	-	Standard	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1K R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	16,848	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1K R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	14,598	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS115L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SUB SMA	80,808	-	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SUB SMA	88,398	-	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS22L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	21,768	-	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS23L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A SUB SMA	24,228	-	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS25L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	21,834	-	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C

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