Taiwan Semiconductor Corporation 整流器-單

系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

制造商Taiwan Semiconductor Corporation

記錄 5,388

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型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
TSPB20U80S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 80V 20A SMPC4.0	15,648	-	Schottky	80V	20A	640mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 80V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
TSSA5U50 E3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO214AC	46,212	-	Schottky	50V	5A	540mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
TSSA5U60 E3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A DO214AC	145,260	-	Schottky	60V	5A	560mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N4148WS RRG	Taiwan Semiconductor Corporation	DIODE GEN PURP 75V 150MA SOD323F	739,926	-	Standard	75V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	-65°C ~ 150°C
BAV21W RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 250V 200MA SOD123	21,894	-	Standard	250V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 150°C
BAT54 RFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA SOT23	24,906	-	Schottky	30V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 125°C
BAS70 RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 70V 70MA SOT-23	23,376	-	Standard	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	5ns	100nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 125°C
1N4005G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	232,836	-	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4007G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A DO204AL	141,780	-	Standard	1000V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR104G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	27,378	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S1GLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	228,468	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S1DLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W	118,404	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S1GLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	95,940	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S1MLS RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.2A SOD123HE	80,028	-	Standard	1000V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 1000V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
S1MLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SOD123W	99,096	-	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S1JLSHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.2A SOD123	42,204	-	Standard	600V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 600V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
S1JLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W	26,046	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S15DLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A SOD123W	99,378	-	Standard	200V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S15GLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A SOD123W	118,506	-	Standard	400V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS1KL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 800MA SUBSMA	315,906	-	Standard	800V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1B R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	112,596	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 100V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1MLHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SUB SMA	56,088	-	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1AL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	29,364	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 50V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
RS1GLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	207,420	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS1JLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W	70,452	-	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 600V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS1MLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SOD123W	49,026	-	Standard	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RSFJL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	105,642	-	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFKL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	81,216	-	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFML RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 500MA SUB SMA	25,254	-	Standard	1000V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1GLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	622,182	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C

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