Taiwan Semiconductor Corporation 整流器-單

系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

制造商Taiwan Semiconductor Corporation

記錄 5,388

頁面 36/180

型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
2A05G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	8,892	-	Standard	600V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
S1MLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A SUB SMA	6,714	Automotive, AEC-Q101	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1MLHRUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A SUB SMA	5,220	Automotive, AEC-Q101	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
1N5399GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1.5A DO204AC	3,510	Automotive, AEC-Q101	Standard	-	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
RS1K M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	8,118	-	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1KHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	7,668	Automotive, AEC-Q101	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1M M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO214AC	2,250	-	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1MHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO214AC	3,888	Automotive, AEC-Q101	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2AA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO214AC	8,082	-	Standard	50V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2BA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO214AC	5,796	-	Standard	100V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 100V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2DA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	2,142	-	Standard	200V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2GA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	8,964	-	Standard	400V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2JA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO214AC	6,768	-	Standard	600V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS12 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO214AC	5,886	-	Schottky	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS12HM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO214AC	4,824	Automotive, AEC-Q101	Schottky	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS13 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO214AC	3,472	-	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS13HM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO214AC	7,524	Automotive, AEC-Q101	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS14 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO214AC	3,510	-	Schottky	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS14HM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO214AC	4,230	Automotive, AEC-Q101	Schottky	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS15 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A DO214AC	7,470	-	Schottky	50V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS15HM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A DO214AC	2,100	Automotive, AEC-Q101	Schottky	50V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS16 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A DO214AC	7,614	-	Schottky	60V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS16HM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A DO214AC	5,598	Automotive, AEC-Q101	Schottky	60V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SR109 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO204AL	2,106	-	Schottky	90V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR109 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO204AL	4,716	-	Schottky	90V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
F1T1GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	2,970	Automotive, AEC-Q101	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
S1BLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	2,340	Automotive, AEC-Q101	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1ALHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	4,284	Automotive, AEC-Q101	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 50V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1BLHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	7,776	Automotive, AEC-Q101	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1DLHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	7,290	Automotive, AEC-Q101	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C

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