Taiwan Semiconductor Corporation 整流器-單

系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

制造商Taiwan Semiconductor Corporation

記錄 5,388

頁面 48/180

型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
ESH1C M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AC	7,326	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	1µA @ 150V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
ESH1D M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	4,878	-	Standard	200V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	1µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
SR010 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 500MA DO204	7,524	-	Schottky	100V	500mA	850mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	65pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1AHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	3,078	Automotive, AEC-Q101	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
RS2BAHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO214AC	2,322	Automotive, AEC-Q101	Standard	100V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2DAHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	5,022	Automotive, AEC-Q101	Standard	200V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
3A100 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO204AC	7,938	-	Standard	-	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	27pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
3A60 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO204AC	3,474	-	Standard	600V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF2L6G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC	2,250	-	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
3A100 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO204AC	8,838	-	Standard	-	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	27pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
3A60 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO204AC	6,606	-	Standard	600V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	27pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SR202 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO204AC	8,910	-	Schottky	20V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 125°C
SR203 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO204AC	3,060	-	Schottky	30V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 125°C
SR204 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO204AC	4,158	-	Schottky	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 125°C
SR205 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A DO204AC	6,066	-	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SR206 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A DO204AC	6,840	-	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
HT16G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	8,136	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SF11G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	2,304	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF12G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	2,322	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF13G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO204AL	8,694	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF14G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	5,274	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
RS1ALHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 800MA SUB SMA	3,240	Automotive, AEC-Q101	Standard	50V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1BL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 800MA SUBSMA	7,038	-	Standard	100V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1BLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 800MA SUBSMA	8,694	Automotive, AEC-Q101	Standard	100V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1DL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 800MA SUBSMA	6,462	-	Standard	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1DLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 800MA SUBSMA	3,006	Automotive, AEC-Q101	Standard	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1GLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 800MA SUBSMA	2,610	Automotive, AEC-Q101	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1JLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 800MA SUBSMA	8,622	Automotive, AEC-Q101	Standard	600V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1KLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 800MA SUBSMA	7,542	Automotive, AEC-Q101	Standard	800V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFBL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 500MA SUBSMA	3,132	-	Standard	100V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C

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