Taiwan Semiconductor Corporation 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商Taiwan Semiconductor Corporation
記錄 5,388
頁面 57/180
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A SUB SMA |
2,070 |
|
Automotive, AEC-Q101 | Schottky | 150V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 150V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 1A SUB SMA |
4,194 |
|
Automotive, AEC-Q101 | Schottky | 90V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 90V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A DO214AC |
2,790 |
|
Automotive, AEC-Q101 | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 1A DO214AC |
4,248 |
|
Automotive, AEC-Q101 | Schottky | 100V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 1A DO214AC |
7,506 |
|
Automotive, AEC-Q101 | Schottky | 90V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A DO214AC |
2,898 |
|
Automotive, AEC-Q101 | Standard | 50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A DO214AC |
3,996 |
|
Automotive, AEC-Q101 | Standard | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO214AC |
3,598 |
|
Automotive, AEC-Q101 | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A DO214AC |
8,100 |
|
Automotive, AEC-Q101 | Standard | 400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A DO214AC |
6,156 |
|
Automotive, AEC-Q101 | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A DO214AC |
3,490 |
|
Automotive, AEC-Q101 | Standard | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO214AA |
5,202 |
|
- | Standard | 200V | 2A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 200V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 2A DO214AA |
7,866 |
|
- | Standard | 600V | 2A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 600V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1A TS-1 |
3,636 |
|
- | Standard | - | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 2A DO214AA |
7,974 |
|
- | Standard | 50V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 2A DO214AA |
3,996 |
|
- | Standard | 100V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO214AA |
8,100 |
|
- | Standard | 200V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 1A TS-1 |
2,394 |
|
- | Schottky | 100V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A SUB SMA |
8,784 |
|
- | Schottky | 150V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 150V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 2A SUB SMA |
4,842 |
|
- | Schottky | 20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 2A SUB SMA |
2,700 |
|
Automotive, AEC-Q101 | Schottky | 20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 2A SUB SMA |
4,680 |
|
- | Schottky | 30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 2A SUB SMA |
6,174 |
|
Automotive, AEC-Q101 | Schottky | 30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 2A SUB SMA |
5,652 |
|
- | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 2A SUB SMA |
8,856 |
|
Automotive, AEC-Q101 | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 2A SUB SMA |
5,076 |
|
- | Schottky | 50V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 50V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 2A SUB SMA |
7,272 |
|
Automotive, AEC-Q101 | Schottky | 50V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 50V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 2A SUB SMA |
7,578 |
|
- | Schottky | 60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 2A SUB SMA |
5,328 |
|
Automotive, AEC-Q101 | Schottky | 60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 2A DO214AA |
7,488 |
|
Automotive, AEC-Q101 | Standard | 50V | 2A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 50V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |