Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 110/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 20V 6.5A TSOP-6 |
7,524 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | ±12V | 1310pF @ 15V | - | 2W (Ta) | - | Surface Mount | Micro6™(SOT23-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 20V 2.4A MICRO-8 |
7,074 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 2.7V, 4.5V | 135mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | ±12V | 260pF @ 15V | Schottky Diode (Isolated) | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 2.7A MICRO-8 |
3,240 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 4.5V, 10V | 130mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | ±20V | 210pF @ 25V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 6.5A MICRO-8 |
6,984 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | ±12V | 1310pF @ 15V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 12A 8-SOIC |
8,928 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 13.5mOhm @ 6.6A, 10V | 1V @ 250µA | 79nC @ 10V | ±20V | 1800pF @ 25V | - | 2.5W (Ta) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 4.5A 8-SOIC |
5,238 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 4.5A (Ta) | 10V | 60mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | ±30V | 930pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 15A 8-SOIC |
5,580 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 15A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 3V @ 250µA | 42nC @ 4.5V | ±20V | 3100pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 12A 8-SOIC |
5,274 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta) | 2.8V, 10V | 9mOhm @ 12A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2480pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 12A 8-SOIC |
7,830 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta) | 4.5V, 10V | 10mOhm @ 12A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 2050pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 200V 1.2A 8-SOIC |
5,454 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 1.2A (Ta) | 10V | 730mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | ±30V | 280pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
7,614 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 12.5mOhm @ 11A, 10V | 3V @ 250µA | 23nC @ 4.5V | ±20V | 2100pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
8,622 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 2.8V, 10V | 12mOhm @ 11A, 10V | 2V @ 250µA | 32nC @ 4.5V | ±12V | 2530pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 40V 9.4A 8-SOIC |
2,844 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 9.4A (Ta) | 4.5V, 10V | 15.5mOhm @ 9.4A, 10V | 2V @ 250µA | 34nC @ 4.5V | ±12V | 2460pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 12.5A 8-SOIC |
8,820 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4.5V, 10V | 9mOhm @ 12.5A, 10V | 1V @ 250µA | 78nC @ 10V | ±20V | 2240pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 2.8A SOT223 |
6,660 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 2.8A (Ta) | 10V | 75mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | 400pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 1.6A SOT223 |
8,352 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 10V | 220mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | ±20V | 160pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 3.9A SOT223 |
3,726 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 3.9A (Ta) | 4V, 10V | 45mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | ±16V | 530pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 40V 206A SUPER-220 |
7,938 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 206A (Tc) | 10V | 3.7mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 300W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | TO-273AA |
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Infineon Technologies |
MOSFET N-CH 40V 185A SUPER-220 |
6,408 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 185A (Tc) | 4.5V, 10V | 4mOhm @ 110A, 10V | 1V @ 250µA | 140nC @ 4.5V | ±16V | 7660pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | TO-273AA |
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Infineon Technologies |
MOSFET N-CH 40V 185A SUPER-220 |
4,626 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 185A (Tc) | 4.5V, 10V | 4mOhm @ 110A, 10V | 1V @ 250µA | 140nC @ 4.5V | ±16V | 7660pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | TO-273AA |
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Infineon Technologies |
MOSFET N-CH 30V 179A SUPER-220 |
4,158 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 179A (Tc) | - | 5mOhm @ 71A, 10V | 1V @ 250µA | 140nC @ 4.5V | - | 5000pF @ 25V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | TO-273AA |
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Infineon Technologies |
MOSFET N-CH 30V 260A SUPER D2PAK |
2,466 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 260A (Tc) | 7V, 10V | 2.5mOhm @ 76A, 10V | 4V @ 250µA | 209nC @ 10V | ±20V | 8250pF @ 25V | - | 3.8W (Ta), 300W (Tc) | - | Surface Mount | SUPER D2-PAK | Super D2-Pak |
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Infineon Technologies |
MOSFET N-CH 40V 185A SUPER D2PAK |
7,344 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 185A (Tc) | 4.5V, 10V | 4.5mOhm @ 110A, 10V | 1V @ 250µA | 140nC @ 4.5V | ±16V | 7660pF @ 25V | - | 300W (Tc) | - | Surface Mount | SUPER D2-PAK | Super D2-Pak |
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Infineon Technologies |
MOSFET N-CH 150V 12A TO-220AB |
5,418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 12A (Tc) | 4V, 10V | 166mOhm @ 7.2A, 10V | 2V @ 250µA | 35nC @ 5V | ±16V | 775pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 20V 85A TO-220AB |
6,840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 85A (Tc) | 4.5V, 7V | 8mOhm @ 51A, 7V | 700mV @ 250µA | 78nC @ 4.5V | ±10V | 3300pF @ 15V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 58A TO220FP |
2,574 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 58A (Tc) | 4V, 10V | 8mOhm @ 31A, 10V | 2V @ 250µA | 130nC @ 5V | ±16V | 5000pF @ 25V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 20V 77A TO-220AB |
3,472 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1996pF @ 10V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 20V 77A TO-220AB |
3,312 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 2.8V, 10V | 8.5mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2410pF @ 10V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 16A TO-220AB |
3,978 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 170mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | ±30V | 1100pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 24A TO-220AB |
2,502 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 100mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | ±30V | 1960pF @ 25V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |