Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 14/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET P-CH 40V 6.2A 8-SOIC |
93,342 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 6.2A (Ta) | 4.5V, 10V | 41mOhm @ 6.2A, 10V | 3V @ 250µA | 80nC @ 10V | ±20V | 3220pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 55V 11A DPAK |
27,696 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 11A (Tc) | 10V | 175mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
33,090 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 11mOhm @ 7.3A, 10V | 3V @ 250µA | 79nC @ 10V | ±20V | 1800pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 16A DPAK |
23,106 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 640pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 16A DPAK |
21,474 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 640pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 12.5A 6PQFN |
34,614 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 12.5A (Tc) | 4.5V, 10V | 32mOhm @ 7.5A, 10V | 2V @ 10µA | 7nC @ 4.5V | ±20V | 540pF @ 25V | - | 11.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-VDFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 60V 40A 8TSDSON |
125,868 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Tc) | 6V, 10V | 6.8mOhm @ 20A, 10V | 3.3V @ 20µA | 21nC @ 10V | ±20V | 1500pF @ 30V | - | 2.1W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 31A DPAK |
15,636 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 31A (Tc) | 10V | 39mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 1690pF @ 25V | - | 3W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK |
21,282 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 740pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 100A DPAK |
21,660 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 100A (Tc) | 2.5V, 4.5V | 4mOhm @ 21A, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | ±12V | 3770pF @ 10V | - | 63W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 100A 8TDSON |
91,182 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 2.6mOhm @ 30A, 10V | 2.2V @ 250µA | 26nC @ 10V | ±20V | 1700pF @ 15V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
72,618 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 7V, 10V | 5.4mOhm @ 20A, 10V | 3.4V @ 17µA | 23nC @ 10V | ±20V | 1300pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
20,736 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35nC @ 5V | ±16V | 1570pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3 |
249,858 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 8.8mOhm @ 50A, 10V | 4V @ 34µA | 48nC @ 10V | ±20V | 3900pF @ 30V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
29,604 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 700V 12.5A TO252-3 |
80,658 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 12.5A (Tc) | 10V | 360mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4nC @ 10V | ±16V | 517pF @ 400V | - | 59.4W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 40A TSDSON-8 |
84,510 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2V @ 36µA | 64nC @ 10V | ±20V | 5100pF @ 20V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 9.4A 8-SOIC |
32,508 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 9.4A (Ta) | 4.5V, 10V | 15.5mOhm @ 9.4A, 10V | 2V @ 250µA | 34nC @ 4.5V | ±12V | 2460pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 35A TO252-3 |
22,722 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 4.5V, 10V | 24mOhm @ 35A, 10V | 2.4V @ 39µA | 39nC @ 10V | ±20V | 2700pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 56A DPAK |
22,194 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 56A (Tc) | 6V, 10V | 3.9mOhm @ 56A, 10V | 3.9V @ 100µA | 130nC @ 10V | ±20V | 3150pF @ 25V | - | 98W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 90A DPAK |
18,984 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 6V, 10V | 4.8mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4360pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 43A DPAK |
254,976 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | ±20V | 1150pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 40V 50A TO252-3 |
101,358 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 12.6mOhm @ 50A, 10V | 4V @ 85µA | 51nC @ 10V | ±20V | 3670pF @ 25V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V 18.6A TO252-3 |
67,704 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 18.6A (Tc) | 10V | 130mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | ±20V | 860pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
23,472 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 22A, 10V | 2V @ 50µA | 42nC @ 10V | ±20V | 1091pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 77A DIRECTFET-S2 |
36,840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 5.8A (Ta), 21A (Tc) | 10V | 36mOhm @ 13A, 10V | 5V @ 25µA | 11nC @ 10V | ±20V | 450pF @ 25V | - | 2.4W (Ta), 30W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET SB | DirectFET™ Isometric SB |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3 |
19,152 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3.3mOhm @ 90A, 10V | 2.2V @ 45µA | 75nC @ 10V | ±16V | 5100pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 49A 8TDSON |
83,616 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 49A (Tc) | 6V, 10V | 11.7mOhm @ 25A, 10V | 3.8V @ 22µA | 18nC @ 10V | ±20V | 1300pF @ 40V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 800V 190MA SOT-223 |
21,270 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 800V | 190mA (Ta) | 10V | 20Ohm @ 190mA, 10V | 4V @ 1mA | - | ±20V | 230pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 200V 17A DPAK |
32,718 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 17A (Tc) | 10V | 165mOhm @ 10A, 10V | 5.5V @ 250µA | 41nC @ 10V | ±30V | 910pF @ 25V | - | 3W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |