Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 15/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 600V 12A TO252-3 |
18,870 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 53W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 160A DPAK |
107,388 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | ±20V | 4880pF @ 15V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 42A DPAK |
29,016 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 9mOhm @ 42A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 1510pF @ 25V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO252-3 |
123,774 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 3.6mOhm @ 90A, 10V | 2V @ 45µA | 78nC @ 10V | ±20V | 6300pF @ 20V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 22A TSDSON-8 |
43,008 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2V @ 250µA | 52nC @ 10V | ±20V | 3680pF @ 20V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 40V 85A PQFN 5X6 |
33,930 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 85A (Tc) | 6V, 10V | 3.3mOhm @ 50A, 10V | 3.9V @ 100µA | 98nC @ 10V | ±20V | 3174pF @ 25V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-TQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 200V 13A DPAK |
31,752 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 13A (Tc) | 10V | 235mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | ±30V | 830pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 161A DPAK |
33,600 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4380pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 40A PQFN |
35,730 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2.35V @ 150µA | 120nC @ 10V | ±20V | 7200pF @ 15V | - | 3.6W (Ta), 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 40V 42A DPAK |
31,806 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56nC @ 4.5V | ±16V | 3810pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 40A 8TSDSON |
51,156 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 40A (Tc) | 6V, 10V | 7.5mOhm @ 20A, 10V | 3.8V @ 36µA | 29.5nC @ 10V | ±20V | 2080pF @ 40V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 24A DPAK |
21,612 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 24A (Tc) | 10V | 95mOhm @ 14A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 890pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 179A D2PAK |
32,670 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.2mOhm @ 90A, 10V | 2.2V @ 100µA | 54nC @ 4.5V | ±20V | 4945pF @ 15V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 18A D2PAK |
30,162 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 150V 2.2A 8-SOIC |
88,122 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 2.2A (Ta) | 10V | 240mOhm @ 1.3A, 10V | 5V @ 250µA | 49nC @ 10V | ±20V | 1280pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH TO252-3 |
45,696 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 73A (Tc) | 10V | 8.9mOhm @ 70A, 10V | 4V @ 120µA | 70nC @ 10V | ±20V | 4810pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8 |
45,042 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 100A (Tc) | 4.5V, 10V | 2mOhm @ 30A, 10V | 2V @ 250µA | 124nC @ 10V | ±20V | 9600pF @ 15V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 21A PQFN |
32,688 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 40A (Tc) | 4.5V, 10V | 4.6mOhm @ 21A, 10V | 2.4V @ 100µA | 58nC @ 4.5V | ±20V | 5250pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
22,398 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 26mOhm @ 25A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 28A MX |
34,074 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 28A, 10V | 2.35V @ 100µA | 42nC @ 4.5V | ±20V | 4700pF @ 15V | - | 2.8W (Ta), 100W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 100V 50A TO252-3 |
21,858 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 4.5V, 10V | 15mOhm @ 50A, 10V | 2.4V @ 60µA | 64nC @ 10V | ±20V | 4180pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 5.7A DIRECTFET |
170,100 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 5.7A (Ta), 25A (Tc) | 10V | 35mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | ±20V | 890pF @ 25V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SJ | DirectFET™ Isometric SJ |
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Infineon Technologies |
MOSFET N-CH 55V 17A TO-220AB |
26,508 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 56A DPAK |
230,118 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK |
35,382 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34nC @ 5V | ±20V | 800pF @ 25V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 18A DIRECTFET |
38,430 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 18A (Ta), 81A (Tc) | 4.5V, 10V | 4.5mOhm @ 18A, 10V | 2.45V @ 250µA | 27nC @ 4.5V | ±20V | 2420pF @ 10V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET P-CH 55V 19A D2PAK |
20,268 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 620pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 100V 56A DPAK |
283,572 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 13.9mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | ±20V | 3031pF @ 50V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 22A TSDSON-8 |
51,660 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 1.8mOhm @ 20A, 10V | 2V @ 250µA | 36nC @ 10V | ±20V | 2500pF @ 12V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 17A TO263-3 |
21,576 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 45A (Tc) | 6V, 10V | 5.7mOhm @ 45A, 10V | 2.8V @ 36µA | 27nC @ 10V | ±20V | 2000pF @ 30V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |